A display device is provided, which includes a first substrate, a second, a backlight module, a liquid-crystal layer and a patterned electrode. The liquid-crystal layer is doped with a left-handed chiral dopant. The patterned electrode includes a main portion with a cross shape. The patterned electrode is divided by a first center line of the main portion into a first sub-portion and a second sub-portion. The first sub-portion and the second sub-portion are adjacent and are connected to the main portion. Each of the first sub-portion and the second sub-portion includes a plurality of branch portions. A first included angle is between one of the branch portions of the second sub-portion and the first center line. A second included angle is between one of the branch portions of the first sub-portion and the first center line. The first included angle and the second included angle are not equal.

High bandwidth (e.g., > 100 GHz) modulators and methods of fabricating such are provided. An EAM comprises a waveguide mesa comprising a continuous multi-quantum well (MQW) layer; a plurality of electrode segments disposed on the waveguide mesa; and a microstrip transmission line disposed on an insulating material layer and in electrical communication with the plurality of electrode segments via conducting bridges. The waveguide mesa comprises alternating active sections and passive sections. An electrode segment of the plurality of electrodes is disposed on a respective one of the active sections. Portions of the continuous MQW layer disposed in each of the active sections having an energy gap defining an active energy gap value. Portions of the continuous MQW layer disposed in each of the passive sections having an energy gap defining an passive energy gap value. The active energy gap value is less than the passive energy gap value.

An optical modulator. The optical modulator comprising: a micro-ring resonator; and a bus waveguide, including an input waveguide region, an output waveguide region, and a coupling waveguide region optically coupled to the micro-ring resonator and located between the input waveguide region and the output waveguide region. The micro-ring resonator includes a modulation region, the modulation region being formed of a silicon portion and a III-V semiconductor portion separated by a crystalline rare earth oxide dielectric layer.

A display panel and a liquid crystal display device are provided by the present application. The display panel includes a thin film transistor, a data line, and a scanning line. The thin film transistor includes an active layer, and the active layer includes a first section extending along a length direction of the data line and overlapping the data line, wherein the first section is electrically connected to the data line; a second section extending along the length direction of the data line; and a third section connecting the first section and the second section and extending along a length direction of the scanning line and overlapping the scanning line.

An irradiation device for an additively manufacturing apparatus may include a working beam generation device configured to provide a working beam, a modulation beam generation device configured to provide a modulation beam, and a solid-state optical modulator that includes a crystalline material that exhibits a change in refractive index in response to photoexcitation of free electrons within the crystalline material. The irradiation device may include a power source coupled to the solid-state optical modulator and configured to introduce free electrons into the crystalline material. The modulation beam may cause photoexcitation of the free electrons within the crystalline material. The photoexcitation of the free electrons within the crystalline material may cause the crystalline material to exhibit a change in refractive index. The working beam, when incident upon the crystalline material, may exhibit a change in one or more parameters, such as a phase shift, attributable at least in part to the change in refractive index exhibited by the crystalline material.

A projection type transparent display includes a polarization modulator and a reflective layer. The polarization modulator is stacked in sequence by a linear polarizer, a liquid crystal layer and a phase retarder. The reflective layer is stacked on the phase retarder. A projection light is incident on the linear polarizer to form a linearly polarized light. The liquid crystal layer changes a polarization direction of the linearly polarized light. Two kinds of linearly polarized projection lights with polarization directions orthogonal to each other are respectively formed and pass through the phase retarder to respectively form two kinds of circularly polarized projection lights with opposite rotation directions. A background light is incident on the reflective layer. A circularly polarized background light with the same spiral direction is reflected, and the circularly polarized background light opposite to the spiral direction passes through the reflective layer and is incident on the polarization modulator.

An electrically controlled polarization rotator is disclosed. The electrically controlled polarization rotator includes two substrates and a liquid crystal layer located between the two substrates. The two substrates have a homogeneous alignment and a homeotropic alignment respectively. A distance between the two substrates is a liquid crystal thickness. A switching electric field which is adjustable is provided between the two substrates. A polarized light is incident on the substrate having the homogeneous alignment. A polarization direction of the polarized light is orthogonal or parallel to an alignment direction of the substrate having the homogeneous alignment. A birefringence of the liquid crystal layer multiplied by the liquid crystal thickness and further divided by a wavelength of the polarized light is greater than 10. The polarization direction of the polarized light is rotated corresponding to an intensity of the switching electric field in the liquid crystal layer.

A display device is provided. The display device includes a first substrate, a second substrate, a patterned electrode, a switch unit, and a liquid-crystal layer doped with a chiral dopant. The second substrate is disposed corresponding to the first substrate, and the patterned electrode is disposed on the first substrate or the second substrate. The switch unit is disposed adjacent to the patterned electrode. The liquid-crystal layer doped with the chiral dopant is disposed between the first substrate and the second substrate. In addition, an edge of the patterned electrode that is closest to the switch unit has an open area and a closed area, wherein the open area is adjacent to the closed area, and the patterned electrode extends a connecting portion out from the closed area and the connecting portion is connected to the switch unit.

A method for on-silicon integration of a III-V-based material component includes providing a first substrate having a silicon-based optical layer including a waveguide, transferring a second substrate of III-V-based material on the optical layer, and forming the III-V component from the second substrate, so as to enable a coupling between the waveguide and the III-V component, by preserving a III-V-based material layer extending laterally. The method also includes forming by epitaxy from the III-V layer, an InP:Fe-based structure laterally bordering the III-V component, forming a layer including contacts configured to contact the III-V component, and transferring a third silicon-based substrate onto the layer including the contacts.

A silicon modulator where the doping profile varies along the lateral and/or longitudinal position in the transition zones to achieve improved performance in terms of either optical attenuation or contact access resistance or both. A silicon-based modulator includes a waveguide including a contact region and a core region, wherein the waveguide includes a dopant concentration that decreases from the contact region to the core region in a transition zone according to a doping profile that is variable.