A display panel and the method of manufacturing the same, includes a first substrate disposed relatively to a second substrate, disposed above the first substrate. A black matrix, a poly silicon layer, a gate layer and a source drain layer disposed successively on the first substrate along direction facing the second substrate. The black matrix shelters the surrounding light which is incident from the first substrate onto the poly crystal layer, and the gate layer and the source-drain layer shelter the backlight which is incident from the second substrate onto the poly crystal layer. The manufacturing method of the display panel of the present invention could be simplified by the method described above.

The present invention provides a display panel and a manufacture method thereof. By locating the matrix electrode corresponding to the black matrix on one side of the color film substrate, which is close to the liquid crystal layer, and because the matrix electrode is coupled to the common electrode signal, no voltage difference exists between the matrix electrode and the common electrode, and no matter in condition of being electrified or not electrified, the liquid crystal layer between the matrix electrode and the common electrode of the array substrate is not orientated and constantly appears in an opaque state so that no interference generates to light between adjacent pixels of the panel to eliminate the large view angle color washout of the panel and to improve the display quality of the LTPS display panel.

A liquid crystal display device according to FFS technology is provided, which sufficiently provides a common electrode with common electric potential and improves an aperture ratio of pixels. A pixel electrode is formed of a first layer transparent electrode. A common electrode made of a second layer transparent electrode is formed above the pixel electrode interposing an insulation film between them. The common electrode in an upper layer is provided with a plurality of slits. The common electrode extends over all the pixels in a display region. An end of the common electrode is disposed on a periphery of the display region and connected with a peripheral common electric potential line that provides a common electric potential Vcom. There is provided neither an auxiliary common electrode line nor a pad electrode, both of which are provided in a liquid crystal display device according to a conventional art.

According to one embodiment, a display device includes first semiconductor layers crossing a first scanning line in a non-display area, the first semiconductor layers being a in number, second semiconductor layers crossing a second scanning line in the non-display area, the second semiconductor layers being b in number, and an insulating film disposed between the first and second semiconductor layers and the first and second scanning lines, wherein a and b are integers greater than or equal to 2, and a is different from b, and the first and second semiconductor layers are both entirely covered with the insulating film.

A liquid crystal display device according to FFS technology is provided, which sufficiently provides a common electrode with common electric potential and improves an aperture ratio of pixels. A pixel electrode is formed of a first layer transparent electrode. A common electrode made of a second layer transparent electrode is formed above the pixel electrode interposing an insulation film between them. The common electrode in an upper layer is provided with a plurality of slits. The common electrode extends over all the pixels in a display region. An end of the common electrode is disposed on a periphery of the display region and connected with a peripheral common electric potential line that provides a common electric potential Vcom. There is provided neither an auxiliary common electrode line nor a pad electrode, both of which are provided in a liquid crystal display device according to a conventional art.

The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first. TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.

A display panel and method of manufacturing the same are provided. The method of manufacturing the display panel includes the steps of providing a substrate, forming a gate on the substrate, forming a gate insulating layer on the gate and the substrate, forming a polysilicon layer on the gate insulating layer, performing a first gray-scale mask process on the polysilicon layer to form a source region, a drain region and an active region located between the source region and the drain region by the polysilicon layer, forming an interlayer dielectric layer on the gate insulating layer and the polysilicon layer, forming a first electrode layer on the interlayer dielectric layer, performing a second gray-scale mask process on the first electrode layer and the interlayer dielectric layer.

An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.

A carrier substrate to be used, when manufacturing a member for an electronic device on a surface of a substrate, by being bonded to the substrate, includes at least a first glass substrate. The first glass substrate has a compaction described below of 80 ppm or less. Compaction is a shrinkage in a case of subjecting the first glass substrate to a temperature raising from a room temperature at 100° C./hour and to a heat treatment at 600° C. for 80 minutes, and then to a cooling to the room temperature at 100° C./hour.

A thin film transistor according to an exemplary embodiment includes: a substrate; a semiconductor layer disposed on the substrate and including a channel region, and an input region and an output region disposed on both sides of the channel region and doped with an impurity; a buffer layer disposed between the substrate and the semiconductor layer; a control electrode overlapping the semiconductor layer; a gate insulation layer disposed between the semiconductor layer and the control electrode; and an input electrode connected to the input region and an output electrode connected to the output region, wherein the semiconductor layer includes polysilicon and is crystallized by a blue laser scan.