G03F7/021

NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMATION METHOD, AND LAMINATED FILM

A negative photosensitive resin composition containing an epoxy group-containing resin and a cationic polymerization initiator which includes a sulfonium salt represented by General Formula (I0). In Formula (I0), R1 and R2 represent an aryl group, a heterocyclic hydrocarbon group, or an alkyl group. R3 to R5 are an alkyl group, a hydroxy group, an alkoxy group, an alkylcarbonyl group, an arylcarbonyl group, an acyloxy group, an arylthio group, an alkylthio group, an aryl group, a heterocyclic hydrocarbon group, an aryloxy group, a hydroxy(poly)alkyleneoxy group, or a halogen atom. k is an integer of 0 to 4, m is an integer of 0 to 3, and n is an integer of 1 to 4. A is a group represented by —S—, —O—, —SO—, —SO.sub.2—, or —CO—. X.sup.− represents a monovalent polyatomic anion

##STR00001##

ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE

The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition capable of obtaining a pattern having a good shape, a resist film, a pattern forming method, and a method for manufacturing an electronic device. The actinic ray-sensitive or radiation-sensitive resin composition of an embodiment of the present invention includes a salt including a cation represented by Formula (X) and a resin of which polarity increases through decomposition by the action of an acid.

##STR00001##

RESIN COMPOSITION AND FLOW CELLS INCORPORATING THE SAME
20220404699 · 2022-12-22 ·

An example resin composition includes an epoxy resin matrix, a first photoacid generator, and a second photoacid generator. The first photoacid generator includes an anion having a molecular weight less than about 250 g/mol. The second photoacid generator includes an anion having a molecular weight greater than about 300 g/mol. In an example, i) a cation of the first photoacid generator has, or ii) a cation of the second photoacid generator has, or iii) the cations of the first and second photoacid generators have a mass attenuation coefficient of at least 0.1 L/(g*cm) at a wavelength of incident light to cure the resin composition.

Photoresist composition, its manufacturing method, and manufacturing methods of metal pattern and array substrate

A photoresist composition and manufacturing method thereof, a manufacturing method of a metal pattern, and a manufacturing method of an array substrate are provided. The photoresist composition includes a base material and an ion adsorbent, and the ion adsorbent is chelating resin.

Enhanced EUV photoresist materials, formulations and processes

The present disclosure relates to novel negative-type photoresist composition and methods of their use. The disclosure further relates to multiple trigger photoresist processes which allow for the improvement in contrast, resolution, and/or line edges roughness in some systems without giving up sensitivity. The photoresist compositions and the methods of the current disclosure are ideal for fine patent processing using, for example, ultraviolet radiation, extreme ultraviolet radiation, beyond extreme ultraviolet radiation, X-rays and changed particle. The disclosure further relates to sensitivity enhancing materials useful in the disclosed compositions and methods.

PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE ELEMENT, CURED PRODUCT, SEMICONDUCTOR DEVICE, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR PRODUCING CIRCUIT SUBSTRATE

A photosensitive resin composition comprises: a resin having a phenolic hydroxyl group; a photosensitive acid generator; a compound having at least one selected from the group consisting of an aromatic ring, a heterocycle and an alicycle, and at least one selected from the group consisting of a methylol group and an alkoxyalkyl group; an aliphatic compound having two or more functional groups being at least one selected from the group consisting of an acryloyloxy group, a methacryloyloxy group, a glycidyloxy group, an oxetanyl alkyl ether group, a vinyl ether group and a hydroxyl group; and a compound having at least one skeleton selected from the group consisting of an anthracene skeleton, a phenanthrene skeleton, a pyrene skeleton, a perylene skeleton, a carbazole skeleton, a phenothiazine skeleton, a xanthone skeleton, a thioxanthone skeleton, an acridine skeleton, a phenylpyrazoline skeleton, a distyrylbenzene skeleton and a distyrylpyridine skeleton, or a benzophenone compound.

COMPOUND, POLYMER, PHOTOSENSITIVE RESIN COMPOSITION, AND COLOR FILTER

A compound, an acrylic polymer formed by a copolymerization reaction of the compound with an ethylenic unsaturated monomer, photosensitive resin composition including the compound being represented by Chemical Formula 1 and a color filter:

##STR00001##

COMPOUND, POLYMER, PHOTOSENSITIVE RESIN COMPOSITION, AND COLOR FILTER

A compound, an acrylic polymer formed by a copolymerization reaction of the compound with an ethylenic unsaturated monomer, photosensitive resin composition including the compound being represented by Chemical Formula 1 and a color filter:

##STR00001##

WELDING METHOD FOR CREATING AN UPSCALED MASTER

A method is for creating an upscaled master for an imprinting process. At least two masters are welded together, whereby at least one master includes at least partially at least one textured area. A photosensitive resin is at least applied between the two masters, whereby light of a light source is guided within a waveguiding system and cures the photosensitive resin at least between the at least two submasters when the photosensitive resin comes into contact with the waveguiding system. An upscaled master is obtained by the method, and an imprinting product is obtained from the upscaled master. An apparatus makes an upscaled master by carrying out the method.

Photoresist Composition, its Manufacturing Method, and Manufacturing Methods of Metal Pattern and Array Substrate

A photoresist composition and manufacturing method thereof, a manufacturing method of a metal pattern, and a manufacturing method of an array substrate are provided. The photoresist composition includes a base material and an ion adsorbent, and the ion adsorbent is chelating resin.