A manufacturing method for a cured substance includes a film forming step of applying a specific photosensitive resin composition onto a base material to form a film, an exposure step of selectively exposing the film, a development step of developing the exposed film with a developer to form a pattern, a treatment step of bringing a treatment liquid into contact with the pattern, and a heating step of heating the pattern after the treatment step, in which at least one of the developer or the treatment liquid contains at least one compound selected from the group consisting of a base and a base generator.

The present invention relates to a positive-type photosensitive resin composition and to a cured film prepared therefrom. The positive-type photosensitive resin composition may have excellent storage stability as it comprises an orthoester, and a cured film prepared therefrom may have excellent adhesion and chemical resistance.

The present invention relates to a positive-type photosensitive resin composition and a cured film prepared therefrom. As the positive-type photosensitive resin composition comprises a siloxane copolymer having a bridge structure introduced into its molecule, it is possible to form a cured film with an excellent film retention rate and improved surface cloudiness phenomenon after development.

The present invention provides a resist composition which has sufficient resistant to a plating treatment and is capable of forming a resist pattern with high accuracy. The present invention also provides a method for producing a resist pattern using the resist composition, and a method for producing a plated molded article using the resist pattern. The present invention relates to a resist composition comprising a compound (I) having a quinone diazide sulfonyl group, a resin comprising a structural unit having an acid-labile group (A1), an alkali-soluble resin (A2) and an acid generator (B); a method for producing a resist pattern using the resist composition; and a method for producing a plated molded article using the resist pattern.

The present invention relates to photosensitive compositions containing polynorbornene (PNB) polymers and certain additives that are useful for forming microelectronic and/or optoelectronic devices and assemblies thereof, and more specifically to compositions encompassing PNBs and certain multifunctional crosslinking agents, and two or more phenolic compounds which are resistant to thermo-oxidative chain degradation and exhibit improved mechanical properties.

The present invention relates to photosensitive compositions containing polynorbornene (PNB) polymers and certain additives that are useful for forming microelectronic and/or optoelectronic devices and assemblies thereof, and more specifically to compositions encompassing PNBs and certain multifunctional crosslinking agents, and two or more phenolic compounds which are resistant to thermo-oxidative chain degradation and exhibit improved mechanical properties.

The disclosed subject matter relates to resist compositions comprising a phenolic resin component, a photoactive 2,1,5-diazonaphthoquinonesulfonate component (PAC), a solvent component that do not include or require the use of an added photo acid generator (PAG). The PAC is a free PAC, a coupled PAC (PACb) or a combination thereof that includes a substituted or unsubstituted 2,1,5-DNQ material or compound onto which a substituted or unsubstituted 2,1,5-DNQ material is appended that, when UV exposed, do not form sulfonic acid. The phenolic resin component is a Novolak derivative in which some or all of the free hydroxy groups are protected with an acid cleavable acetal moiety which can include a PACb moiety. The disclosed subject matter also relates to the methods of using the present compositions in either in thick for thin film photoresist device manufacturing methodologies.

Some embodiments include a semiconductor construction which has one or more openings extending into a substrate. The openings are at least partially filled with dielectric material comprising silicon, oxygen and carbon. The carbon is present to a concentration within a range of from about 3 atomic percent to about 20 atomic percent. Some embodiments include a method of providing dielectric fill across a semiconductor construction having an opening extending therein. The semiconductor construction has an upper surface proximate the opening. The method includes forming photopatternable dielectric material within the opening and across the upper surface, and exposing the photopatternable dielectric material to patterned actinic radiation. Subsequently, the photopatternable dielectric material is developed to pattern the photopatternable dielectric material into a first dielectric structure which at least partially fills the opening, and to remove the photopatternable dielectric material from over the upper surface.

The present invention relates to resist compositions comprising (A) a polymer component, (B) a photoacid generator component, (C) a photoactive diazonaphthoquinone component, and (D) a solvent. The polymer component comprises a mixture of a Novolak derivative and a polymer comprising hydroxystyrene repeat units. The polymer component comprises repeat units with free phenolic hydroxy moieties and repeat units with phenolic hydroxy moieties protected with an acid cleavable acetal moiety. The positive photoresist composition is suitable for manufacturing electronic devices.

Describe herein is a composition comprising: an acrylic polymer comprising repeat units selected from ones having structure (1), (2), (3), (4), (5), (6), and (7) wherein these repeat units are present in said acrylic polymer in the mole % ranges as described herein; a Novolak resin having a dissolution rate in 0.26 N aqueous TMAH of at least 50 Å/sec; a diazonaphthoquinone (DNQ) photoactive compound (PAC); and an organic spin casting solvent, and a process of using said composition as a positive photoresist developable in aqueous base.