The present invention is a resist material containing a base polymer and an acid generator, where the resist material contains, as the acid generator, a sulfonium salt or iodonium salt of a sulfonic acid bonded to a maleimide group. In a chemically amplified resist material in which an acid is used as a catalyst, it is desired to develop an acid generator that makes it possible to reduce LWR of line patterns and critical dimension uniformity (CDU) of hole patterns, and to improve sensitivity. For this purpose, it is necessary to reduce image blurs due to acid diffusion considerably. An object of the present invention is to provide: a resist material having high sensitivity and low CDU in both a positive resist material and a negative resist material; and a patterning process using the same.

The present invention is a resist material containing a base polymer and an acid generator, where the resist material contains, as the acid generator, a sulfonium salt or iodonium salt of a sulfonic acid bonded to a maleimide group. In a chemically amplified resist material in which an acid is used as a catalyst, it is desired to develop an acid generator that makes it possible to reduce LWR of line patterns and critical dimension uniformity (CDU) of hole patterns, and to improve sensitivity. For this purpose, it is necessary to reduce image blurs due to acid diffusion considerably. An object of the present invention is to provide: a resist material having high sensitivity and low CDU in both a positive resist material and a negative resist material; and a patterning process using the same.

A method for producing a resist composition includes setting parameter, acquiring a pattern size for a regression analysis, analyzing performing a regression analysis, calculating a pattern size of a target resist composition based on the regression analysis, comparing the pattern size of the target resist composition and the target pattern size, determining a formulating amount of the resist composition in a case where a difference between the pattern size of the target resist composition and the target pattern size is within an allowable range, and producing a resist composition based on the determined formulating amount, in which, in a case where the difference is out of the allowable range, the method further includes changing at least the content of components in the target resist composition, and the formulating amount of the resist composition is determined based on the changed physical quantity to produce the resist composition.

A method for producing a resist composition includes setting parameter, acquiring a pattern size for a regression analysis, analyzing performing a regression analysis, calculating a pattern size of a target resist composition based on the regression analysis, comparing the pattern size of the target resist composition and the target pattern size, determining a formulating amount of the resist composition in a case where a difference between the pattern size of the target resist composition and the target pattern size is within an allowable range, and producing a resist composition based on the determined formulating amount, in which, in a case where the difference is out of the allowable range, the method further includes changing at least the content of components in the target resist composition, and the formulating amount of the resist composition is determined based on the changed physical quantity to produce the resist composition.

An actinic ray-sensitive or radiation-sensitive resin composition includes a resin whose solubility in an aqueous alkali solution increases by the action of an acid, a compound that generates an acid upon irradiation with actinic rays or radiation, an ester compound, and a fluorine-containing polymer, in which the ester compound has alkali decomposability and has a molecular weight of 50 or more and less than 1,500.

An actinic ray-sensitive or radiation-sensitive resin composition includes a resin whose solubility in an aqueous alkali solution increases by the action of an acid, a compound that generates an acid upon irradiation with actinic rays or radiation, an ester compound, and a fluorine-containing polymer, in which the ester compound has alkali decomposability and has a molecular weight of 50 or more and less than 1,500.

A positive resist composition is provided comprising two onium salts, a base polymer comprising acid labile group-containing recurring units, and an organic solvent. The positive resist composition forms a pattern having PED stability and improved properties including DOF, LWR, and controlled footing profile.

An object of the present invention is to provide a pattern forming method with which a pattern having excellent resolution performance and LER performance can be formed. In addition, another object of the present invention is to provide a method for manufacturing an electronic device, an actinic ray-sensitive or radiation-sensitive resin composition, and a resist film.

A pattern forming method of the present invention includes a resist film forming step of forming a resist film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition, an exposing step of exposing the resist film, and a developing step of positively developing the exposed resist film using an organic solvent-based developer, in which the actinic ray-sensitive or radiation-sensitive resin composition includes a resin having a polar group, a compound including two or more ion pairs which are decomposed by an irradiation with an actinic ray or a radiation and having a molecular weight of 5,000 or less, and a solvent.

An object of the present invention is to provide a pattern forming method with which a pattern having excellent resolution performance and LER performance can be formed. In addition, another object of the present invention is to provide a method for manufacturing an electronic device, an actinic ray-sensitive or radiation-sensitive resin composition, and a resist film.

A pattern forming method of the present invention includes a resist film forming step of forming a resist film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition, an exposing step of exposing the resist film, and a developing step of positively developing the exposed resist film using an organic solvent-based developer, in which the actinic ray-sensitive or radiation-sensitive resin composition includes a resin having a polar group, a compound including two or more ion pairs which are decomposed by an irradiation with an actinic ray or a radiation and having a molecular weight of 5,000 or less, and a solvent.

The present invention provides a polybenzoxazole precursor, which comprises a structure of formula (I):

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wherein the definitions of Y, Z, R.sub.1, i, j, and V are provided herein. By means of the polybenzoxazole precursor, the resin composition of the present invention is able to form a film with high frequency characteristics and high contrast.