A resist underlayer film composition for use in a multilayer resist method, containing one or more compounds shown by formula (1), and an organic solvent,

WX).sub.n   (1)

W represents an n-valent organic group having 2 to 50 carbon atoms. X represents a monovalent organic group shown by formula (1X). “n” represents an integer of 1 to 10,

##STR00001##

The dotted line represents a bonding arm. R.sup.01 represents an acryloyl or methacryloyl group. Y represents a single bond or a carbonyl group. Z represents a monovalent organic group having 1 to 30 carbon atoms. A resist underlayer film composition can be cured by high energy beam irradiation and form a resist underlayer film having excellent filling and planarizing properties and appropriate etching resistance and optical characteristics in a fine patterning process by a multilayer resist method in the semiconductor apparatus manufacturing process.

A radiation-sensitive resin composition includes a polymer and a compound. The compound includes a first structural unit including an aromatic carbon ring to which no less than two hydroxy groups bond, and a second structural unit including an acid-labile group which is dissociable by an action of an acid to give a carboxy group. The compound is represented by formula (1). R.sup.1 represents a monovalent organic group having 1 to 30 carbon atoms; and X.sup.+ represents a monovalent radiation-sensitive onium cation. A weight average molecular weight of the polymer is no greater than 10,000.

R.sup.1—COO.sup.−X.sup.+  (1)

A method for manufacturing a chemically amplified photosensitive composition capable of reducing a foreign matter derived from a sulfur-containing compound. The method includes an acid generating agent which generates an acid by irradiation with an active ray or radiation, a sulfur-containing compound which is a solid at room temperature, a first solvent having a Hansen solubility parameter in which a polar term δp is 10 (MPa.sup.0.5) or more, and a second solvent which is different than the first solvent, the method including preparing a solution of the sulfur-containing compound by dissolving the sulfur-containing compound in the first solvent, and blending the solution of the sulfur-containing compound, the acid generating agent, and the second solvent.

The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (A) which contains a repeating unit (a1) having a specific ring structure, a compound (B) which generates an acid by an irradiation with an actinic ray or a radiation, and a specific compound (C) which is decomposed by an irradiation with an actinic ray or a radiation so that an acid-trapping property is lowered; an actinic ray-sensitive or radiation-sensitive film formed of the actinic ray-sensitive or radiation-sensitive resin composition; a pattern forming method using the actinic ray-sensitive or radiation-sensitive resin composition; and a method for manufacturing an electronic device.

Disclosed are a salt represented by formula (I), an acid generator, and a resist composition:

##STR00001##

wherein R.sup.1, R.sup.2 and R.sup.3 each represent a hydroxy group, *—O—R.sup.10, *—O-L.sup.10-CO—O—R.sup.10, etc.; L.sup.10 represents an alkanediyl group; R.sup.10 represents an acid-labile group; R.sup.4 to R.sup.9 each represent a halogen atom, a haloalkyl group, etc.; A.sup.1, A.sup.2 and A.sup.3 each represent a hydrocarbon group, etc.; m1 and m7 represent an integer of 0 to 5, m2 to m6, m8 and m9 represent an integer of 0 to 4, 0≤m1+m7≤5, 0≤m2+m8≤4, 0≤m3+m9≤4, and at least one of m1, m2 and m3 represents an integer of 1 or more; X.sup.4 represents a single bond, —CH.sub.2—, etc.; and Al.sup.− represents an organic anion.

A method of manufacturing a semiconductor structure includes the following operations. A photoresist layer is formed on a metal layer, in which the photoresist layer includes an additive selected from the group consisting of a first heterocyclic compound containing a triazole ring, a second heterocyclic compound containing an imidazole ring, biphenyl thiol, biphenyl dithiol, benzenethiol, and benzenedithiol. The photoresist layer is exposed to an actinic radiation. The photoresist layer is developed by a developer to form holes in the photoresist layer. Redistribution lines are formed in the holes by an electroplating process.

A resist composition comprising a sulfonium salt having an acid labile group of aromatic ring-containing tertiary ester type in the cation as the acid generator exhibits a high sensitivity and reduced LWR or improved CDU.

A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of an iodized or brominated phenol, and recurring units (b1) having an acid labile group-substituted carboxyl group and/or recurring units (b2) having an acid labile group-substituted phenolic hydroxyl group exhibits a high sensitivity, high resolution, low edge roughness and dimensional uniformity, and forms a pattern of good profile after exposure and development.

Method of forming pattern in photoresist layer includes forming photoresist layer over substrate, selectively exposing photoresist layer to actinic radiation forming latent pattern. Latent pattern is developed by applying developer to form pattern. Photoresist layer includes photoresist composition including polymer: ##STR00001##
A.sub.1, A.sub.2, L are direct bond, C4-C30 aromatic, C4-C30 alkyl, C4-C30 cycloalkyl, C4-C30 hydroxylalkyl, C4-C30 alkoxy, C4-C30 alkoxyl alkyl, C4-C30 acetyl, C4-C30 acetylalkyl, C4-C30 alkyl carboxyl, C4-C30 cycloalkyl carboxyl, C4-C30 hydrocarbon ring, C4-C30 heterocyclic, —COO—, A1 and A2 are not both direct bonds, and are unsubstituted or substituted with a halogen, carbonyl, or hydroxyl; A.sub.3 is C6-C14 aromatic, wherein A.sub.3 is unsubstituted or substituted with halogen, carbonyl, or hydroxyl; R.sub.1 is acid labile group; Ra, Rb are H or C1-C3 alkyl; R.sub.f is direct bond or C1-C5 fluorocarbon; PAG is photoacid generator; 0≤x/(x+y+z)≤1, 0≤y/(x+y+z)≤1, and 0≤z/(x+y+z)≤1.

A photoresist composition includes a conjugated resist additive, a photoactive compound, and a polymer resin. The conjugated resist additive is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline. The polyacetylene, polythiophene, polyphenylenevinylene, polyfluorene, polypryrrole, the polyphenylene, and polyaniline includes a substituent selected from the group consisting of an alkyl group, an ether group, an ester group, an alkene group, an aromatic group, an anthracene group, an alcohol group, an amine group, a carboxylic acid group, and an amide group. Another photoresist composition includes a polymer resin having a conjugated moiety and a photoactive compound. The conjugated moiety is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline.