The present invention is a resist material containing a quencher, where the quencher contains a sulfonium salt of a carboxylic acid bonded to a maleimide group. In a chemically amplified resist material in which an acid is used as a catalyst, it is desired to develop a quencher that makes it possible to reduce LWR of line patterns and critical dimension uniformity (CDU) of hole patterns, and to improve sensitivity. For this purpose, it is necessary to reduce image blurs due to acid diffusion considerably. An object of the present invention is to provide: a resist material having high sensitivity, low LWR, and low CDU in both a positive resist material and a negative resist material; and a patterning process using the same.

A chemically amplified positive-type photosensitive resin composition including an acid generator which generates acid upon exposure to an irradiated active ray or radiation, a resin whose solubility in alkali increases under the action of acid, and a nitrogen-containing aromatic heterocyclic compound that is a nitrogen-containing aromatic heterocyclic compound having a specific structure and having a Log S value of −6.00 or less.

A photoacid generator (PAG) and a photoresist composition including the PAG, the PAG being represented by Formula I below,

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A method for forming a semiconductor structure is provided. The method includes depositing a hard mask layer over a substrate. The method further includes depositing a silver precursor layer over the hard mask layer. The method further includes exposing portions of the silver precursor layer to a radiation, the radiation causing a reduction of silver ions in the irradiated portions of the silver precursor layer. The method further includes removing non-irradiated portions of the silver precursor layer, resulting in a plurality of silver seed structures.

A method for forming a semiconductor structure is provided. The method includes depositing a hard mask layer over a substrate. The method further includes depositing a silver precursor layer over the hard mask layer. The method further includes exposing portions of the silver precursor layer to a radiation, the radiation causing a reduction of silver ions in the irradiated portions of the silver precursor layer. The method further includes removing non-irradiated portions of the silver precursor layer, resulting in a plurality of silver seed structures.

A method for forming a structure for a radio frequency identification device includes dispensing a photosensitive compound onto a substrate. Subsequently, first portions of the photosensitive compound are exposed to a light pattern from a light source, while second portions of the photosensitive compound remain unexposed to the light source. Exposing the photosensitive compound to light reduces the photosensitive compound to a metal layer. The unexposed second portions of the photosensitive compound may be rinsed away to leave the metal layer. Processing may continue to form an RFID circuit from the metal layer, and a completed RFID transponder comprising the RFID circuit.

A non-hydroxylic-solvent soluble silver complex comprises a reducible silver ion complexed with an α-oxy carboxylate and a 5- or 6-membered N-heteroaromatic compound. The non-hydroxylic-solvent soluble silver complex can be represented by the following formula (I):
(Ag.sup.+).sub.a(L).sub.b(P).sub.c   (I)
wherein L represents the α-oxy carboxylate; P represents the 5- or 6-membered N-heteroaromatic compound; a is 1 or 2; b is 1 or 2; and c is 1, 2, 3, or 4, provided that when a is 1, b is 1, and when a is 2, b is 2. Such complexes can be incorporated into photosensitive compositions for thin films or patterns in various articles to provide electrically-conductive silver metal.

A non-hydroxylic-solvent soluble silver complex comprises a reducible silver ion complexed with an α-oxy carboxylate and a 5- or 6-membered N-heteroaromatic compound. The non-hydroxylic-solvent soluble silver complex can be represented by the following formula (I):
(Ag.sup.+).sub.a(L).sub.b(P).sub.c   (I)
wherein L represents the α-oxy carboxylate; P represents the 5- or 6-membered N-heteroaromatic compound; a is 1 or 2; b is 1 or 2; and c is 1, 2, 3, or 4, provided that when a is 1, b is 1, and when a is 2, b is 2. Such complexes can be incorporated into photosensitive compositions for thin films or patterns in various articles to provide electrically-conductive silver metal.

A thermally developable material comprising a support and having thereon at least one non-photosensitive carrier layer comprising: a binder comprising vinyl butyral repeat units and alcohol repeat units, an adhesion promoting compound comprising ester repeat units, and a crosslinker comprising isocyanate repeat units; and at least one thermally developable imaging layer comprising organic silver salt grains, light-sensitive silver halide grains, a reducing agent, a binder comprising hydroxyl and butryal repeat units, and a crosslinker comprising at least one isocyanate group.

A thermally developable material comprising a support and having thereon at least one non-photosensitive carrier layer comprising: a binder comprising vinyl butyral repeat units and alcohol repeat units, an adhesion promoting compound comprising ester repeat units, and a crosslinker comprising isocyanate repeat units; and at least one thermally developable imaging layer comprising organic silver salt grains, light-sensitive silver halide grains, a reducing agent, a binder comprising hydroxyl and butryal repeat units, and a crosslinker comprising at least one isocyanate group.