A resist underlayer film-forming composition includes: a polysiloxane compound including a first structural unit represented by formula (1); and a solvent. X represents a group represented by formula (2); a is an integer of 1 to 3; R.sup.1 represents a halogen atom, a hydroxy group, or a monovalent organic group having 1 to 20 carbon atoms; and b is an integer of 0 to 2; and a sum of a and b is no greater than 3. R.sup.2 represents a monovalent hydrocarbon group having 1 to 20 carbon atoms; n is 1 or 2; R.sup.3 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; L represents a single bond or a divalent linking group; and * denotes a site bonding to the silicon atom in the formula (1). The composition is suitable for lithography with an electron beam or extreme ultraviolet ray.

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A composition including a polysiloxane compound (A) containing a structural unit represented by formula (1) and a structural unit represented by formula (2), wherein a siloxane structural unit ratio represented by Q unit/(Q unit+T unit) in all Si structural units is 0.60 or more and less than 1.00, and the solvent (B).

[(R.sup.1).sub.b(R.sup.2).sub.m(OR.sup.3).sub.lSiO.sub.n/2]  (1)

[In the formula, R.sup.1 is a group represented by following formula.]

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[(R.sup.4).sub.pSiO.sub.q/2]  (2)

A method for measuring a distance of diffusion of a curing catalyst for a thermosetting silicon-containing material includes the steps of: forming a silicon-containing film from a composition containing a thermosetting silicon-containing material, a curing catalyst and a solvent; coating the silicon-containing film with a photosensitive resin composition containing a resin whose solubility in alkaline developer is increased by the action of an acid, an acid generator and a solvent, and subsequently heating to prepare a substrate on which the silicon-containing film and a resin film are formed; irradiating the substrate with a high energy beam or an electron beam to generate an acid and heat-treating the substrate to increase the solubility of the resin in an alkaline developer by the action of the acid in the resin film; dissolving the resin film in an alkaline developer; and measuring a film thickness of the remaining resin.

A resist underlayer film composition for use in a multilayer resist method, containing one or more compounds shown by formula (1), and an organic solvent,

WX).sub.n   (1)

W represents an n-valent organic group having 2 to 50 carbon atoms. X represents a monovalent organic group shown by formula (1X). “n” represents an integer of 1 to 10,

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The dotted line represents a bonding arm. R.sup.01 represents an acryloyl or methacryloyl group. Y represents a single bond or a carbonyl group. Z represents a monovalent organic group having 1 to 30 carbon atoms. A resist underlayer film composition can be cured by high energy beam irradiation and form a resist underlayer film having excellent filling and planarizing properties and appropriate etching resistance and optical characteristics in a fine patterning process by a multilayer resist method in the semiconductor apparatus manufacturing process.

Methods of fabricating three-dimensional objects featuring properties of a soft bodily tissue and three-dimensional objects featuring properties of a soft bodily tissue or of an organ comprising same are provided.

Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. In one example, a method of processing a substrate includes applying a photoresist layer comprising a photoacid generator to on a multi-layer disposed on a substrate, wherein the multi-layer comprises an underlayer formed from an organic material, inorganic material, or a mixture of organic and inorganic materials, exposing a first portion of the photoresist layer unprotected by a photomask to a radiation light in a lithographic exposure process, and applying an electric field or a magnetic field to alter movement of photoacid generated from the photoacid generator substantially in a vertical direction.

A method of generating a layout pattern includes disposing a photoresist layer of a resist material on a substrate and disposing a top layer over of the photoresist layer. The top layer is transparent for extreme ultraviolet (EUV) radiation and the top layer is opaque for deep ultraviolet (DUV) radiation. The method further includes irradiating the photoresist layer with radiation generated from an EUV radiation source. The radiation passes through the top layer to expose the photoresist layer.

A hard mask-forming composition which forms a hard mask used in lithography, including: a resin containing an aromatic ring and a polar group; and a compound containing at least one of an oxazine ring fused to an aromatic ring, and a fluorene ring.

An object of the present invention is to provide a light- or heat-curing method by which a cured product (crosslinked product or resin) can be prepared in a simple method even in a case where filler is contained in a large amount; a curable resin composition which is used in the curing method; and the like. The present invention provides a light- or heat-curing method containing a step 1 of obtaining (E) a condensate having constitutional units of Si—O—Al and/or Si—O—Si, obtained from aluminum derived from an aluminum alkoxide and a silane derived from a silane coupling agent having a mercapto group, from (A) a compound that is formed of a salt of a carboxylic acid and an amine and has a carbonyl group generating a radical and a carboxylate group generating a base through decarboxylation by irradiation with light or heating, the (B) aluminum alkoxide, the (C) silane coupling agent having a mercapto group, and (D) water, and a step 2 of performing a reaction among the (E) condensate, (H) a compound having two or more polymerizable unsaturated groups, and (I) filler under the conditions of irradiation with light or heating in the presence of the (A) compound; a curable resin composition which is used in the curing method; and the like.

A silicon-containing composition includes a polysiloxane compound and solvent. The polysiloxane compound includes a fluorine atom and a group including an ester bond. The polysiloxane compound preferably includes a first structural unit represented by formula (1), and a second structural unit represented by formula (2). X represents a monovalent organic group having 1 to 20 carbon atoms and comprising a fluorine atom; R.sup.1 represents a halogen atom, a hydroxy group, or a monovalent organic group having 1 to 20 carbon atoms; Y represents a monovalent organic group having 1 to 20 carbon atoms and comprising an ester bond; and R.sup.2 represents a halogen atom, a hydroxy group, or a monovalent organic group having 1 to 20 carbon atoms.

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