The present disclosure provides a method of heating a spin on coating (SOC) film on a wafer. The method includes actions S401 to S405. In action S401, a heating apparatus is provided. The heating apparatus includes a bake plate and an electromagnetic wave generator. In action S402, the bake plate is heated by a heating unit disposed in the bake plate. In action S403, the wafer is placed on the bake plate of the heating apparatus. In action S404, the electromagnetic wave generator generates an electromagnetic wave to heat the SOC film. The electromagnetic wave generated by the electromagnetic wave generator has a frequency within a range of 1 THz to 100 THz. In action S405, the wafer is removed from the bake plate of the heating apparatus.

There is provided resist underlayer film for lithography process with high dry etching resistance, wiggling resistance, and heat resistance. Resist underlayer film-forming composition for lithography including polymer having unit structure of Formula (1): wherein A is hydroxy group-substituted C.sub.6-40 arylene group derived from polyhydroxy aromatic compound; B is C.sub.6-40 arylene group or C.sub.4-30 heterocyclic group containing nitrogen atom, oxygen atom, sulfur atom, or combination thereof; X.sup.+ is H.sup.+, NH.sub.4.sup.+, primary ammonium ion, secondary ammonium ion, tertiary ammonium ion, or quaternary ammonium ion, T is hydrogen atom, C.sub.1-10 alkyl group or C.sub.6-40 aryl group that may be substituted with halogen group, hydroxy group, nitro group, amino group, carboxylate ester group, nitrile group, or combination thereof as substituent, or C.sub.4-30 heterocyclic group containing nitrogen atom, oxygen atom, sulfur atom, or combination thereof, B and T may form C.sub.4-40 ring together with carbon atom to which they are bonded. ##STR00001##

Gray-tone lithography techniques for controlling the thickness profile of an overcoat layer on a surface-relief grating that has a non-uniform grating parameter (e.g., depth, duty cycle, or period), compensating for the non-uniform etch rate in a large area, defining etch/block regions, and/or controlling the thickness of the grating layer.

A resist underlayer film composition for use in a multilayer resist method, containing one or more compounds shown by formula (1), and an organic solvent,

WX).sub.n   (1)

W represents an n-valent organic group having 2 to 50 carbon atoms. X represents a monovalent organic group shown by formula (1X). “n” represents an integer of 1 to 10,

##STR00001##

The dotted line represents a bonding arm. R.sup.01 represents an acryloyl or methacryloyl group. Y represents a single bond or a carbonyl group. Z represents a monovalent organic group having 1 to 30 carbon atoms. A resist underlayer film composition can be cured by high energy beam irradiation and form a resist underlayer film having excellent filling and planarizing properties and appropriate etching resistance and optical characteristics in a fine patterning process by a multilayer resist method in the semiconductor apparatus manufacturing process.

The present invention pertains to a spin coating composition comprising a carbon material and a metal organic compound. The invention also pertains to a method of using the same to form a metal oxide film above a substrate and manufacturing a device.

A method for forming a photoresist relief image including applying a layer of a coating composition on a substrate; and disposing a layer of a photoresist composition on the layer of the coating composition, wherein the coating composition comprises an amine-containing polymer comprising a hydrocarbon-substituted amino group and having nitrogen atoms in an amount from 3 to 47 weight percent, based on a total weight of the amine-containing polymer.

A method of generating a layout pattern includes disposing a photoresist layer of a resist material on a substrate and disposing a top layer over of the photoresist layer. The top layer is transparent for extreme ultraviolet (EUV) radiation and the top layer is opaque for deep ultraviolet (DUV) radiation. The method further includes irradiating the photoresist layer with radiation generated from an EUV radiation source. The radiation passes through the top layer to expose the photoresist layer.

A method for lithographically patterning a photoresist is provided. The method includes receiving a wafer with the photoresist and exposing the photoresist using an extreme ultraviolet (EUV) radiation reflected by an EUV mask. The EUV mask includes a substrate, a reflective multilayer stack on the substrate, a capping layer on the reflective multilayer stack, a patterned absorber layer on the capping layer. The patterned absorber layer includes a matrix metal and an interstitial element occupying interstitial sites of the matrix metal, and a size ratio of the interstitial element to the matrix metal is from about 0.41 to about 0.59.

A resist underlayer composition and a method of forming patterns using a resist underlayer composition, the resist underlayer composition including a polymer, the polymer including a structural unit that is a reaction product of an isocyanurate compound, the isocyanurate compound having at least one thiol group thereon, and a solvent.

A lithographic printing plate precursor is disclosed which comprises a support, a photopolymerizable image recording layer and an overcoat which comprises a low-molecular radical inhibitor. After image-wise exposure, the plate is heated whereby the radical inhibitor diffuses from the overcoat to the image recording layer, resulting in an increase of the daylight stability of the exposed and heated precursor. Such plate is especially suitable for on-press processing.