A resist underlayer film-forming composition includes: a polysiloxane compound including a first structural unit represented by formula (1); and a solvent. X represents a group represented by formula (2); a is an integer of 1 to 3; R.sup.1 represents a halogen atom, a hydroxy group, or a monovalent organic group having 1 to 20 carbon atoms; and b is an integer of 0 to 2; and a sum of a and b is no greater than 3. R.sup.2 represents a monovalent hydrocarbon group having 1 to 20 carbon atoms; n is 1 or 2; R.sup.3 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; L represents a single bond or a divalent linking group; and * denotes a site bonding to the silicon atom in the formula (1). The composition is suitable for lithography with an electron beam or extreme ultraviolet ray.

##STR00001##

A resist underlayer film-forming composition includes: a polysiloxane compound including a first structural unit represented by formula (1); and a solvent. X represents a group represented by formula (2); a is an integer of 1 to 3; R.sup.1 represents a halogen atom, a hydroxy group, or a monovalent organic group having 1 to 20 carbon atoms; and b is an integer of 0 to 2; and a sum of a and b is no greater than 3. R.sup.2 represents a monovalent hydrocarbon group having 1 to 20 carbon atoms; n is 1 or 2; R.sup.3 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; L represents a single bond or a divalent linking group; and * denotes a site bonding to the silicon atom in the formula (1). The composition is suitable for lithography with an electron beam or extreme ultraviolet ray.

##STR00001##

A positive resist composition is provided comprising two onium salts, a base polymer comprising acid labile group-containing recurring units, and an organic solvent. The positive resist composition forms a pattern having PED stability and improved properties including DOF, LWR, and controlled footing profile.

A composition including a polysiloxane compound (A) containing a structural unit represented by formula (1) and a structural unit represented by formula (2), wherein a siloxane structural unit ratio represented by Q unit/(Q unit+T unit) in all Si structural units is 0.60 or more and less than 1.00, and the solvent (B).

[(R.sup.1).sub.b(R.sup.2).sub.m(OR.sup.3).sub.lSiO.sub.n/2]  (1)

[In the formula, R.sup.1 is a group represented by following formula.]

##STR00001##

[(R.sup.4).sub.pSiO.sub.q/2]  (2)

A composition including a polysiloxane compound (A) containing a structural unit represented by formula (1) and a structural unit represented by formula (2), wherein a siloxane structural unit ratio represented by Q unit/(Q unit+T unit) in all Si structural units is 0.60 or more and less than 1.00, and the solvent (B).

[(R.sup.1).sub.b(R.sup.2).sub.m(OR.sup.3).sub.lSiO.sub.n/2]  (1)

[In the formula, R.sup.1 is a group represented by following formula.]

##STR00001##

[(R.sup.4).sub.pSiO.sub.q/2]  (2)

Provided is a lithographic printing plate precursor having a support, an image-recording layer, and an overcoat layer in this order, in which the image-recording layer contains a polymerization initiator, a polymerizable compound, and particles, and the overcoat layer contains a discoloring compound. Also provided is a method of preparing a lithographic printing plate or a lithographic printing method that uses the lithographic printing plate precursor.

Provided is a lithographic printing plate precursor having a support, an image-recording layer, and an overcoat layer in this order, in which the image-recording layer contains a polymerization initiator, a polymerizable compound, and particles, and the overcoat layer contains a discoloring compound. Also provided is a method of preparing a lithographic printing plate or a lithographic printing method that uses the lithographic printing plate precursor.

A composition includes: a compound including an aromatic ring; and a first polymer including a first structural unit represented by formula (1) and a second structural unit represented by formula (2). A content of the first polymer with respect to 100 parts by mass of the compound is no less than 0.1 parts by mass and no greater than 200 parts by mass. R.sup.1 represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group; and R.sup.2 represents a substituted or unsubstituted monovalent hydrocarbon group. R.sup.3 represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group; L represents a single bond or a divalent linking group; Ar represents a group obtained by removing (n+1) hydrogen atoms from a substituted or unsubstituted aromatic ring; R.sup.4 represents a hydroxy group or a monovalent hydroxyalkyl group; and n is an integer of 1 to 8.

##STR00001##

A composition includes: a compound including an aromatic ring; and a first polymer including a first structural unit represented by formula (1) and a second structural unit represented by formula (2). A content of the first polymer with respect to 100 parts by mass of the compound is no less than 0.1 parts by mass and no greater than 200 parts by mass. R.sup.1 represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group; and R.sup.2 represents a substituted or unsubstituted monovalent hydrocarbon group. R.sup.3 represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group; L represents a single bond or a divalent linking group; Ar represents a group obtained by removing (n+1) hydrogen atoms from a substituted or unsubstituted aromatic ring; R.sup.4 represents a hydroxy group or a monovalent hydroxyalkyl group; and n is an integer of 1 to 8.

##STR00001##

Methods for making thin-films on semiconductor substrates, may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.