Photodefinable alignment layers for chemical assisted patterning and approaches for forming photodefinable alignment layers for chemical assisted patterning are described. An embodiment of the invention may include disposing a chemically amplified resist (CAR) material over a hardmask that includes a switch component. The CAR material may then be exposed to form exposed resist portions. The exposure may produces acid in the exposed portions of the CAR material that interact with the switch component to form modified regions of the hardmask material below the exposed resist portions.

The present disclosure provides a photosensitive resin multilayer body which comprises a support film and a photosensitive resin layer that is superposed on the support film. The photosensitive resin layer contains from 30% by mass to 70% by mass of an alkali-soluble polymer, from 20% by mass to 50% by mass of a compound that has an ethylenically unsaturated double bond, and from 0.01% by mass to 20% by mass of a photopolymerization initiator. The alkali-soluble polymer has an acid equivalent weight of 350 or more, while containing, as a copolymerization component, a (meth)acrylate that has an aromatic group. The compound that has an ethylenically unsaturated double bond contains from 50% by mass to 100% by mass of an acrylate monomer based on the total mass of the compound, while having a double-bond equivalent weight of 150 or more. The photosensitive resin layer has a thickness of 30 μm or more.

The present disclosure provides a photosensitive resin multilayer body which comprises a support film and a photosensitive resin layer that is superposed on the support film. The photosensitive resin layer contains from 30% by mass to 70% by mass of an alkali-soluble polymer, from 20% by mass to 50% by mass of a compound that has an ethylenically unsaturated double bond, and from 0.01% by mass to 20% by mass of a photopolymerization initiator. The alkali-soluble polymer has an acid equivalent weight of 350 or more, while containing, as a copolymerization component, a (meth)acrylate that has an aromatic group. The compound that has an ethylenically unsaturated double bond contains from 50% by mass to 100% by mass of an acrylate monomer based on the total mass of the compound, while having a double-bond equivalent weight of 150 or more. The photosensitive resin layer has a thickness of 30 μm or more.

A photosensitive resin composition is provided comprising 100 pbw of a polyimide silicone containing a primary alcoholic hydroxyl group, a crosslinker, a photoacid generator, a polyfunctional epoxy compound, 1-70 pbw of a filler having an average particle size of 0.01-20.0 μm, and 0.01-30 pbw of a colorant. The resin composition is colored and photosensitive and cures into a product having an improved modulus.

A substrate, a substrate holder, a substrate coating apparatus, a method for coating the substrate and a method for removing the coating. A monomolecular layer is applied to the backside of the substrate or a clamp surface of the substrate holder. The friction force between the substrate backside and the substrate is small when the substrate does not experience full clamping force. After loading the substrate on the substrate holder full clamping force is exerted in order to fix the substrate. The clamping force causes local removal of the monomolecular layer, resulting in an increase of the friction force between the substrate and the substrate holder.

Pattern formation methods comprise: (a) forming an underlayer on a substrate, wherein the underlayer has a thickness of 5 microns or more; (b) forming a photoresist layer on the underlayer, wherein the photoresist layer is formed from a photoresist composition comprising a silicon-containing polymer, a photoacid generator, and a solvent, wherein the silicon-containing polymer comprises as polymerized units a monomer of formula (I):

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wherein: R.sup.1 is independently chosen from H, F, OH, C1-C6 alkyl, C1-C6 haloalkyl, C1-C6 hydroxy-haloalkyl, C1-C6 alkoxy, or C1-C6 haloalkoxy; R.sup.2 is independently chosen from H or F; R.sup.3 is independently chosen from H, F, CH.sub.3, CF.sub.3, CHF.sub.2, or CH.sub.2F; comprises an acid cleavable group; and m is an integer from 0 to 2; (c) patternwise exposing the photoresist layer to activating radiation; (d) developing the exposed photoresist layer to form a photoresist pattern; and (f) transferring the pattern of the photoresist pattern into the underlayer using the photoresist pattern as an etch mask. The invention has particular applicability in the formation of three-dimensional patterns such as staircase patterns used in the formation of semiconductor devices.

The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition with which a pattern having an excellent pattern collapse suppressing property and excellent LWR performance can be obtained. In addition, the present invention also provides a resist film, a pattern forming method, and a method for manufacturing an electronic device, each regarding the actinic ray-sensitive or radiation-sensitive resin composition. The actinic ray-sensitive or radiation-sensitive resin composition of the present invention includes a resin whose solubility in a developer is changed by the action of an acid, a photoacid generator represented by General Formula (b1), and a solvent, in which the photoacid generator represented by General Formula (b1) is a compound that generates an acid having a pka of 1.0 or less upon irradiation with actinic rays or radiation

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The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition with which a pattern having an excellent pattern collapse suppressing property and excellent LWR performance can be obtained. In addition, the present invention also provides a resist film, a pattern forming method, and a method for manufacturing an electronic device, each regarding the actinic ray-sensitive or radiation-sensitive resin composition. The actinic ray-sensitive or radiation-sensitive resin composition of the present invention includes a resin whose solubility in a developer is changed by the action of an acid, a photoacid generator represented by General Formula (b1), and a solvent, in which the photoacid generator represented by General Formula (b1) is a compound that generates an acid having a pka of 1.0 or less upon irradiation with actinic rays or radiation

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The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition with which a pattern having an excellent pattern collapse suppressing property and excellent LWR performance can be obtained. In addition, the present invention also provides a resist film, a pattern forming method, and a method for manufacturing an electronic device, each regarding the actinic ray-sensitive or radiation-sensitive resin composition. The actinic ray-sensitive or radiation-sensitive resin composition of the present invention includes a resin whose solubility in a developer is changed by the action of an acid, a photoacid generator represented by General Formula (b1), and a solvent, in which the photoacid generator represented by General Formula (b1) is a compound that generates an acid having a pka of 1.0 or less upon irradiation with actinic rays or radiation ##STR00001##

The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition with which a pattern having an excellent pattern collapse suppressing property and excellent LWR performance can be obtained. In addition, the present invention also provides a resist film, a pattern forming method, and a method for manufacturing an electronic device, each regarding the actinic ray-sensitive or radiation-sensitive resin composition. The actinic ray-sensitive or radiation-sensitive resin composition of the present invention includes a resin whose solubility in a developer is changed by the action of an acid, a photoacid generator represented by General Formula (b1), and a solvent, in which the photoacid generator represented by General Formula (b1) is a compound that generates an acid having a pka of 1.0 or less upon irradiation with actinic rays or radiation ##STR00001##