A method for producing flexographic printing plates, using as starting material a photopolymerizable flexographic printing element which at least comprises, arranged one atop another, a dimensionally stable support, and at least one photopolymerizable, relief-forming layer, at least comprising an elastomeric binding, an ethylenically unsaturated compound, and a photoinitiator, a digitally imagable layer, and the method comprises at least the following steps (a) producing a mask by imaging the digitally imagable layer, (b) exposing the photopolymerizable, relief-forming layer through the mask with actinic light, and photopolymerizing the image regions of the layer, and (c) developing the photopolymerized layer by washing out the unphotopolymerized regions of the relief-forming layer with an organic solvent, or by thermal development, characterized in that step (b) comprises two or more exposure cycles (b 1) to (b n) with actinic light with an intensity of 100 to 5000 mW/cm.sup.2 from a plurality of UV-LEDs, the energy input into the photopolymerizable, relief-forming layer per exposure cycle being 0.1 to 5 J/cm.sup.2.

A method of manufacturing a semiconductor device includes dividing a number of dies along an x axis in a die matrix in each exposure field in an exposure field matrix delineated on the semiconductor substrate, wherein the x axis is parallel to one edge of a smallest rectangle enclosing the exposure field matrix. A number of dies is divided along a y axis in the die matrix, wherein the y axis is perpendicular to the x axis. Sequences SNx0, SNx1, SNx, SNxr, SNy0, SNy1, SNy, and SNyr are formed. p*(Nbx+1)−2 stepping operations are performed in a third direction and first sequence exposure/stepping/exposure operations and second sequence exposure/stepping/exposure operations are performed alternately between any two adjacent stepping operations as well as before a first stepping operation and after a last stepping operation. A distance of each stepping operation in order follows the sequence SNx.

Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. In one example, a method of processing a substrate includes applying a photoresist layer comprising a photoacid generator to on a multi-layer disposed on a substrate, wherein the multi-layer comprises an underlayer formed from an organic material, inorganic material, or a mixture of organic and inorganic materials, exposing a first portion of the photoresist layer unprotected by a photomask to a radiation light in a lithographic exposure process, and applying an electric field or a magnetic field to alter movement of photoacid generated from the photoacid generator substantially in a vertical direction.

In this work is presented a method for fabrication of high-aspect ratio structures through spalling effect. The spalling is achieved through lithography, etching and sputtering processes, thus providing the flexibility to position the spalled structures according to the application requirements. This method has been successfully demonstrated for metal-oxides and metals. The width of the fabricated structures is dependent on the thickness of the film deposited by sputtering, where structures as small as 20 nm in width have been obtained.

Embodiments of the present disclosure include a lithography apparatus, patterning system, and method of patterning a layered structure. The patterning system includes an image formation device and a reactive layer. The patterning system allows for creating lithography patterns in a single operation. The lithography apparatus includes the patterning system and an optical system. The lithography apparatus uses a plurality of wavelengths of light, along with the image formation device, to create a plurality of color patterns on the reactive layer. The method of patterning includes exposing the reactive layer to a plurality of wavelengths of light. The light reacts differently with different regions of the reactive layer, depending on the wavelength of light emitted onto the different regions. The method and apparatuses disclosed herein require only one image formation device and one lithography operation.

An extreme ultraviolet lithography (EUVL) method includes providing at least two phase-shifting mask areas having a same pattern. A resist layer is formed over a substrate. An optimum exposure dose of the resist layer is determined, and a latent image is formed on a same area of the resist layer by a multiple exposure process. The multiple exposure process includes a plurality of exposure processes and each of the plurality of exposure processes uses a different phase-shifting mask area from the at least two phase-shifting mask areas having a same pattern.

The present invention relates to a microstructure 20 having pores 22 on its surface or inside. The microstructure is a sheet containing an energy ray active resin 21. The pores 22 are formed in a vertical array and are in a formation pattern with a Talbot distance being specified by Formula 1 below:

Z.sub.T=(2nd.sup.2)/λ  [Formula 1] where Z.sub.T represents a Talbot distance (nm), n represents a refractive index, d represents a pitch distance (nm), and λ represents a light wavelength (nm). The pores have a periodic shape in the planar direction. Thus, the present invention provides three-dimensional microfabricated structures through which the periodicity is controlled.

A method of reducing junction resistance variation for junctions in quantum information processing devices fabricated using two-step deposition processes. In one aspect, a method includes providing a dielectric substrate (208), forming a first resist layer (210) on the dielectric substrate, forming a second resist layer (212) on the first resist layer, and forming a third resist layer (214) on the second resist layer. The first resist layer includes a first opening (216) extending through a thickness of the first resist layer, the second resist layer includes a second opening (218) aligned over the first opening and extending through a thickness of the second resist layer, and the third resist layer includes a third opening (220) aligned over the second opening and extending through a thickness of the third resist layer.

Embodiments disclosed herein include a lithographic patterning system and methods of using such a system to form a microelectronic device. In an embodiment, the lithographic patterning system includes an actinic radiation source, a stage where a major surface of the stage is for supporting a substrate with a resist layer, and a first prism over the stage, where the first prism comprises a first face that is substantially parallel to the major surface of the stage. In an embodiment, the lithographic patterning system further comprises a second prism, where the second prism comprises a first surface that is substantially parallel to a second surface of the first prism, and where a second surface of the second prism has a reflective coating.

A grating coupler may be fabricated by exposing a photopolymer layer to grating forming light for forming periodic refractive index variations in the photopolymer layer. The photopolymer layer may be exposed to apodization light for reducing an amplitude of the periodic refractive index variations in a spatially-selective manner. The apodization may also be achieved or facilitated by subjecting outer surface(s) of the photopolymer layer to a chemically reactive agent that causes the refractive index contrast to be reduced near the surface(s) of application. The apodized refractive index profile of the gratings facilitates the reduction of optical crosstalk between different gratings of the grating coupler.