The present invention is a compound represented by the following general formula (1). ##STR00001##

According to one embodiment, there is provided a reflection mask including a multilayer reflection film configured to reflect EUV light or soft X-rays. The reflection mask includes a periodic pattern arrangement region in which first patterns are periodically arranged, and a non-periodic pattern arrangement region in which second patterns are non-periodically arranged. The non-periodic pattern arrangement region and the periodic pattern arrangement region differ from one another in reflectivity for the EUV light or the soft X-rays.

A non-chemically-amplified positive resist composition comprising a polymer comprising both recurring units derived from a sulfonium salt capable of generating a fluorinated acid and recurring units containing an amino group as a base resin exhibits a high resolution and a low edge roughness and forms a pattern of good profile after exposure and organic solvent development.

Techniques related to multi-pass patterning lithography, device structures, and devices formed using such techniques are discussed. Such techniques include exposing a resist layer disposed over a grating pattern with non-reflecting radiation to generate an enhanced exposure portion within a trench of the grating pattern and developing the resist layer to form a pattern layer having a pattern structure within the trench of the grating pattern.

This conductive composition includes: a conductive polymer (a) having a sulfonic acid group and/or a carboxy group; a basic compound (b) having at least one nitrogen-containing heterocyclic ring and an amino group; an aqueous polymer (c) having a hydroxyl group (excluding the conductive polymer (a)); a hydrophilic organic solvent (d); and water (e).

Disclosed is a method for lithography patterning. The method includes providing a substrate, forming a deposition enhancement layer (DEL) over the substrate, and flowing an organic gas near a surface of the DEL. During the flowing of the organic gas, the method further includes irradiating the DEL and the organic gas with a patterned radiation. Elements of the organic gas polymerize upon the patterned radiation, thereby forming a resist pattern over the DEL. The method further includes etching the DEL with the resist pattern as an etch mask, thereby forming a patterned DEL.

Methods and apparatus for determining an intensity profile of a radiation beam. The method comprises providing a diffraction structure, causing a relative movement of the diffraction structure relative to the radiation beam from a first position, wherein the radiation beam does not irradiate the diffraction structure to a second position, wherein the radiation beam irradiates the diffraction structure, measuring, with a radiation detector, diffracted radiation signals produced from a diffraction of the radiation beam by the diffraction structure as the diffraction structure transitions from the first position to the second position or vice versa, and determining an intensity profile of the radiation beam based on the measured diffracted radiation signals.

A method is for producing a scattered beam collimator starting from a lower side and extending in a build-up direction as far as an upper side, and having a large number of X-ray absorbing partitions, and in which pass-through channels for unscattered X-ray radiation are embodied between the partitions. A lithographic process is used, by which the partitions of the scattered beam collimator are formed from a photoresist into which an X-ray absorbing material is mixed.

The present invention provides a photo-substrate for printing of lenticular images that comprises a lenticular lens array, and an energy-reactive material adhered to the backside of the lenticular lens array. According to the methods of the present invention, the lenticular image is printed directly through the lenticular lens array onto the energy-reactive material, using, for example, collimated light or laser. The photo-substrate of the present invention can be adapted for large scale or industrial production to print lenticular images on a wide array of substrates, including such things as packaging and clothing.

Apparatus and methods for coherent diffraction imaging This is accomplished by acquiring data in a CDI setup with a CMOS or similar detector. The object is illuminated with coherent light such as EUV light which may be pulsed. This generates diffraction patterns which are collected by the detector, either in frames or continuously (by recording the scan position during collection). Pixels in the CDI data are thresholded and set to zero photons if the pixel is below the threshold level. Pixels above the threshold may be set to a value indicating one photon, or multiple thresholds may be used to set pixels values to one photon, two photons, etc. In addition, multiple threshold values may be used to detect different photon energies for illumination at multiple wavelengths.