Methods and systems for photopatterning and miniaturization. In some examples, a method for patterning a substrate includes irradiating a pattern onto the substrate with ultraviolet light and heating the substrate, causing the substrate and the pattern to shrink in at least one dimension to form a miniaturized pattern on the substrate. In some examples, a system for patterning a substrate includes an ultraviolet light source, a heater, and a controller configured for irradiating a pattern onto the substrate with ultraviolet light and heating the substrate, causing the substrate and the pattern to shrink in at least one dimension to form a miniaturized pattern on the substrate.

A method for manufacturing semiconductor elements by a metal lift-off process and a semiconductor element manufactured thereby, include steps of photoresist-coating, exposing, developing, metal-coating, and lift-off. A photoresist layer can be removed with a photoresist stripper. Meanwhile, the metal on the top of the photoresist layer can also be removed when the photoresist layer is removed. The circuit layout required for the semiconductor element can thus be completed without an etching process. In addition, by setting the process parameters, the contour of the photoresist layer can present a certain angle, so that the metal on the surface of the photoresist layer can be completely removed, which saves costs and improves competitiveness.

A resist composition containing a resin component having a structural unit containing a group which is dissociated under the action of an acid and compound represented by the general formula (bd1). In the formula (bd1), Rx.sup.1 to Rx.sup.4 represent a hydrocarbon group or a hydrogen atom or may be mutually bonded to form a ring structure, Ry.sup.1 to Ry.sup.2 represent a hydrocarbon group or a hydrogen atom or may be mutually bonded to form a ring structure, and Rz.sup.1 to Rz.sup.4 represent a hydrocarbon group or a hydrogen atom or may be mutually bonded to form a ring structure. At least one of Rx.sup.1 to Rx.sup.4, Ry.sup.1 to Ry.sup.2 and Rz.sup.1 to Rz.sup.4 has an anion group, the entire anion moiety may be an n-valent anion, and M.sup.m+ represents an m-valent organic cation ##STR00001##

Provided is a method of making a circuit pattern. The method includes: Step (A): providing a master substrate comprising a first photosensitive layer containing photosensitive particles; Step (B): providing an energy beam to reduce metal ions in a predetermined area of the first photosensitive layer to form multiple first metal particles; Step (C): removing unreduced photosensitive particles by a fixer to obtain a master mask; wherein the first metal particles form a first predetermined pattern in the master mask; Step (D): providing a chip comprising a second photosensitive layer containing second photosensitive particles; Step (E): putting the master mask on the second photosensitive layer and providing an energy beam to reduce metal ions of an uncovered part of the second photosensitive layer to form multiple atomized second metal particles; Step (F): removing unreduced photosensitive particles by a fixer to obtain the circuit pattern having line spacing at picoscopic/nanoscopic scale.

A mask structure and a manufacturing method of the mask structure are provided. The mask structure includes a transparent substrate, a patterned metal layer, and a plurality of microlens structures. The patterned metal layer is disposed on the transparent substrate and exposing a portion of the transparent substrate. The microlens structures are disposed on the transparent substrate exposed by a portion of the patterned metal layer and being in contact with the portion of the patterned metal layer.

A method of making photolithography mask plate is provided. The method includes: providing a chrome layer on a substrate; depositing a carbon nanotube layer on the chrome layer to expose a part of a surface of the chrome layer; etching the chrome layer with the carbon nanotube layer as a mask to obtain a patterned chrome layer; and depositing a cover layer on the carbon nanotube layer.

A process including providing a substantially flat printed image on a substrate; disposing a curable gellant composition onto the printed image in registration with the printed image, successively depositing additional amounts of the gellant composition to create a raised image in registration with the printed image; and curing the deposited raised image. A process including providing a printed image on a substrate; disposing a curable non-gellant composition onto the printed image in registration with the printed image; and disposing a curable gellant composition onto the printed image in registration with the printed image; to create a raised image in registration with the printed image; and curing the deposited raised image. An ultraviolet curable phase change gellant composition including a radiation curable monomer or prepolymer, a photoinitiator, a silicone polymer or pre-polymer, and a gellant.

An object of the present invention is to provide a chemical liquid which makes it difficult for a defect to occur on a substrate after development. Another object of the present invention is to provide a chemical liquid storage body and a pattern forming method. The chemical liquid of the according to an embodiment of the present invention contains a main agent which is formed of one kind of organic solvent or formed of a mixture of two or more kinds of organic solvents, an impurity metal, and a surfactant, in which a vapor pressure of the main agent is 60 to 1,340 Pa at 25° C., the impurity metal contains particles containing one kind of metal selected from the group consisting of Fe, Cr, Ni, and Pb, in a case where the chemical liquid contains one kind of particles, a content of the particles in the chemical liquid is 0.001 to 30 mass ppt with respect to a total mass of the chemical liquid, and in a case where the chemical liquid contains two or more kinds of particles, a content of each kind of the particles in the chemical liquid is 0.001 to 30 mass ppt with respect to the total mass of the chemical liquid.

A method of making photolithography mask plate is provided. The method includes: providing a chrome layer on a substrate; depositing a carbon nanotube layer on the chrome layer to expose a part of a surface of the chrome layer; etching the chrome layer with the carbon nanotube layer as a mask to obtain a patterned chrome layer; and depositing a cover layer on the carbon nanotube layer.

A shadow mask includes a mask including one surface, another surface, and an opening that passes from one surface to the other, and a shutter provided on the one surface of the mask and configured to adjust a size of the opening, wherein the shutter is configured to move from an edge to a center of the opening to adjust the size of the opening, and the shadow mask is applied in manufacturing a blank mask for a semiconductor lithography process.