A lithography system includes an extreme ultraviolet (EUV) light source, a reticle stage, a reflection layer, and a plurality of light permeable protrusions. The EUV light source is configured for generating an EUV light beam. The reticle stage is configured for holding a reticle with a front surface of the reticle facing in a downward direction. The reflection layer is below the reticle stage. The light permeable protrusions are formed on the reflection layer. Each of the light permeable protrusions includes a bouncing surface facing in a direction that forms an acute angle with the downward direction. A first portion of the EUV light beam from the EUV light source passes through the bouncing surface of each of the light permeable protrusions to the reflection layer and is reflected to the reticle by the reflection layer.

According to one embodiment, a pattern drawing method includes correcting a drawing parameter for a pattern to be drawn on a resist film on a surface of a substrate. The correction being based on drawing information, height information, and dimensional difference information. The drawing information is design data for drawing the pattern on the resist film by irradiating the resist film with an electron beam. The height information indicates changes in surface height of the substrate. The dimensional difference information includes differences between a dimension of a pattern as indicated in the design data and a dimension of a pattern formed on the substrate by processing the substrate using a resist film patterned according to the drawing information as a mask. The correction of the drawing parameter reduces a dimensional difference between design data and a pattern formed on a target portion on the surface of the substrate.

An exposure machine and an exposure method are provided in some embodiments of the present disclosure. The exposure machine includes: a detection module, configured to detect whether there are attachments on the surface of a reticle: a cleaning device, configured to clean the attachments on the surface of the reticle; and an exposure module, configured to expose the reticle having no attachments detected.

Disclosed herein is a full-size mask assembly and a manufacturing method thereof. The full-size mask assembly according to an embodiment of the present invention includes a frame having a frame opening formed therein and a support surrounding the frame opening, a structural auxiliary mask supported by the support and having a plurality of shafts in a grid shape to form a plurality of structural auxiliary mask openings, and a plurality of cell unit masks supported by the structural auxiliary mask and each of which has a deposition pattern portion through which a deposition material passes.

This conductive composition includes: a conductive polymer (a) having a sulfonic acid group and/or a carboxy group; a basic compound (b) having at least one nitrogen-containing heterocyclic ring and an amino group; an aqueous polymer (c) having a hydroxyl group (excluding the conductive polymer (a)); a hydrophilic organic solvent (d); and water (e).

Disclosed herein is a full-size mask assembly and a manufacturing method thereof. The full-size mask assembly according to an embodiment of the present invention includes a frame having a frame opening formed therein and a support surrounding the frame opening, a structural auxiliary mask supported by the support and having a plurality of shafts in a grid shape to form a plurality of structural auxiliary mask openings, and a plurality of cell unit masks supported by the structural auxiliary mask and each of which has a deposition pattern portion through which a deposition material passes.

The instant disclosure includes an implanting apparatus and a method thereof. The implanting apparatus has a chuck configured to carry a substrate is rotated a number of times at an angle during ion implantation. In this way, masks used during semiconductor fabrication is reduced.

An embodiment of the present application provides a preparation method of a mask assembly, including: fixing, after stretching and aligning a blocking, the blocking on a side of a frame; opening at least one stretching align hole and at least one evaporation align mark in the fixed blocking and frame; fixing, after stretching and aligning a mask sheet, the mask sheet on a side of the blocking away from the frame according to the stretching align hole; and opening at least one evaporation align mark in the fixed mask sheet to obtain the mask assembly.

The present invention relates to a frame-integrated mask. The frame-integrated mask according to the present invention is used in a process of forming pixels on a silicon wafer, and includes a mask including a mask pattern, and a frame connected to at least a part of a region of the mask excluding the region in which the mask pattern is formed. The mask has a shape corresponding to the silicon wafer and is integrally connected to the frame.

A photomask including a photomask body having a surface on which a mask pattern is formed and to be scanned and subjected to pattern transfer to a resist through a lens assembly including a connecting portion and a non-connecting portion. The mask pattern has a first region subjected to the pattern transfer at the connecting portion of the lens assembly and a second region subjected to the pattern transfer at the non-connecting portion. The mask pattern has, in at least one of the first and second regions, a corrected line width which is adjusted by calculation such that the resist is to have a target line width as designed. The corrected line width has a stepwise change in at least one of a scanning direction and a direction orthogonal to the scanning direction. The stepwise change is made by including a correction component based on a random number.