The present invention provides a photosensitive material with which a film having a low relative permittivity can be formed. In addition, the present invention provides a pattern forming method, a manufacturing method of a circuit wiring, a manufacturing method of a touch panel, and a transfer film, which are related to the photosensitive material.

The photosensitive material of the present invention satisfies at least one requirement of the following requirement (V01) or the following requirement (W01).

(V01) the photosensitive material includes a polymer A having a carboxy group and a compound β which has a structure b0 in which an amount of the carboxy group included in the polymer A is reduced by exposure.

(W01) the photosensitive material includes a polymer Ab0 which is the polymer A and further has the structure b0 in which the amount of the carboxy group included in the polymer A is reduced by exposure.

There are provided a curable composition for imprinting, the curable composition including an organopolysiloxane having a radical polymerizable group, a radical generator, and a compound that has a monovalent hydrocarbon group having 4 to 11 carbon atoms and a poly(oxyalkylene) group, in which some or all of hydrogen atoms of the monovalent hydrocarbon group are optionally substituted with halogen atoms, a coating film of the composition, a method for producing the film, a cured product of the composition, a method for producing an imprint pattern using the composition, and a method for producing a device, the method including the method for producing an imprint pattern.

The inventive concept relates to a block copolymer for lithography, capable of self-assembling and self-healing, and more particularly, to a block copolymer including a first block which is a repeating unit of polymerized siloxane and a second block which is a repeating unit of polymerized alkyl azobenzene acrylate. The alkyl is a linear or branched chain of 1 to 10 carbon atoms, the number (x) of the repeating unit of polymerized siloxane is about 60 to about 80, and the number (y) of the repeating unit of polymerized alkyl azobenzene acrylate is about 15 to about 25. The block copolymer has a cylindrical phase.

A material for forming organic film contains (A) compound shown by general formula (1) and/or polymer having repeating unit shown by general formula (4), and (B) organic solvent. In formula (1), AR1, AR2, AR3, AR4, AR5, and AR6 each represent benzene ring or naphthalene ring; R1 represents any group shown in following formula (2); “n” represents integer of 1 or 2; and W represents divalent organic group having 2-50 carbon atoms. In formula (4), AR1, AR2, AR3, AR4, AR5, AR6, R1, “n”, and W are as defined above; and R2 and R3 each represent hydrogen atom or organic group having 1-20 carbon atoms, and optionally bond to each other within molecule to form cyclic organic group. An object provides a material for forming organic film to enable high etching resistance and excellent twisting resistance without impairing resin-derived carbon content; and compound and polymer suitable for material for forming organic film.

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Customizable hydrogel patterned into arrays of microwells, microchannels, or other microfeatures, and a process to prepare patterned hydrogel adherent to a solid support, are provided. A pattern of light is applied to photopolymerizable hydrogel precursor solution on a solid support, resulting in the formation of a patterned hydrogel bonded to the solid support. Hydrogel precursor solution is held by a ring of a customized height secured to a photomask or to a surface allowing transmission of a pattern of light. This process allows for facile customization and repeated fabrications of hydrogel microwells of desired heights and geometries with a micron or submicron scale resolution, adherent on various solid supports.

Methods of depositing a conformal carbon-containing film on an EUV photoresist to reduce line edge roughness (LER) are described. Exemplary processing methods may include flowing a first precursor over a patterned EUV surface to form a first portion of an initial carbon-containing film on the structure. The methods may include removing a first precursor effluent from the patterned EUV photoresist. A second precursor may then be flowed over the patterned EUV photoresist to react with the first portion of the initial carbon-containing film. The methods may include removing a second precursor effluent from the patterned EUV photoresist. The methods may include etching the substrate to remove a portion of the carbon-containing film and expose a top surface of the patterned surface and expose the substrate between the patterned surfaces.

Methods for direct patterning of a silicon hardmask with extreme ultraviolet (EUV) radiation are provided. The method involves forming a polysiloxane and/or oligosiloxane composition into a silicon hardmask layer followed by solvent removal. Without using a photoresist and/or other layer silicon hardmask layer, condensation of the siloxane sol-gel polymers and/or oligomers is induced by EUV radiation, rendering the exposed portions insoluble in typical lithography solvents or developers. The exposed portions of the silicon hardmask layer are removed, leaving a pattern in the silicon hardmask layer that can be transferred to any layers below the silicon hardmask layer, and ultimately to the substrate.

A material for forming organic film contains (A) compound shown by general formula (1) and/or polymer having repeating unit shown by general formula (4), and (B) organic solvent. In formula (1), AR1, AR2, AR3, AR4, AR5, and AR6 each represent benzene ring or naphthalene ring; R1 represents any group shown in following formula (2); n represents integer of 1 or 2; and W represents divalent organic group having 2-50 carbon atoms. In formula (4), AR1, AR2, AR3, AR4, AR5, AR6, R1, n, and W are as defined above; and R2 and R3 each represent hydrogen atom or organic group having 1-20 carbon atoms, and optionally bond to each other within molecule to form cyclic organic group. An object provides a material for forming organic film to enable high etching resistance and excellent twisting resistance without impairing resin-derived carbon content; and compound and polymer suitable for material for forming organic film. ##STR00001##