The present disclosure relates to a method for at least one of forming a part or modifying a part, and a system therefor. The method involves initially providing a planar structure having a first material layer disposed on a second material layer. A lithographic operation including greyscale printing is performed to produce a resist material layer on the first material layer, with the resist material layer having a predetermined three-dimensional pattern extending along X, Y and Z axes, with features helping to define the three-dimensional pattern having differing dimensions along the Z axis, and which acts as a mask. An etch process is then performed, using the mask provided by the resist material layer, to etch the first material layer to impart the pattern of the mask as an etched pattern into the first material layer in accordance with a predetermined selectivity etching ratio, such that the etched pattern in the first material layer includes features formed with greater dimensions than corresponding features in the mask of the resist material layer.

Provided are a cleaning agent and a preparation method and the use thereof. The cleaning agent is prepared from the following raw materials comprising the following mass fraction of components: 0.5%-20% of an oxidant containing iodine, 0.5%-20% of an etchant containing boron, 1%-50% of a pyrrolidinone solvent, 1%-20% of a corrosion inhibitor, 0.01%-5% of a metal ion-free surfactant, and water, with the sum of the mass fraction of each component being 100%, the pH of the cleaning agent is 7.5-13.5, and the corrosion inhibitor is one or more of a benzotriazole corrosion inhibitor, a hydrazone corrosion inhibitor, a carbazone corrosion inhibitor and a thiocarbohydrazone corrosion inhibitor. The cleaning agent can efficiently remove nitrides from hard mask residues with little effects on metals and low-κ dielectric materials, and has a good selectivity.

A processing method is disclosed that enables an improved directed self-assembly (DSA) processing scheme by allowing the formation of improved guide strips in the DSA template that may enable the formation of sub-30 nm features on a substrate. The improved guide strips may be formed by improving the selectivity of wet chemical processing between different organic layers or films. In one embodiment, treating the organic layers with one or more wavelengths of ultraviolet light may improve selectivity. The first wavelength of UV light may be less than 200 nm and the second wavelength of UV light may be greater than 200 mn.

A substrate processing method for removing an organic film on a substrate includes a) carrying out introduction of ozone-containing gas into a substrate processing chamber to fill at least a space above the substrate in the substrate processing chamber with ozone-containing gas, b) starting spraying through the space a heated chemical liquid containing sulfuric acid onto the substrate after the a), c) continuing the spraying started in the b), and d) stopping the spraying continued in the c).

A composition for forming a resist underlayer film containing a hydrolysis condensate prepared through hydrolysis and condensation of a hydrolyzable silane, wherein the hydrolyzable silane contains a hydrolyzable silane of Formula (1):

R.sup.1.sub.aR.sup.2.sub.bSi(R.sup.3).sub.4−(a+b)   Formula (1)

wherein R.sup.1 is an organic group having a primary amino group, a secondary amino group, or a tertiary amino group and is bonded to a silicon atom via an Si—C bond; R.sup.2 is an alkyl group, an aryl group, a halogenated alkyl group, a halogenated aryl group, an alkoxyaryl group, an alkenyl group, an acyloxyalkyl group, or an organic group having an acryloyl group, a methacryloyl group, a mercapto group, an amino group, an amide group, a hydroxyl group, an alkoxy group, an ester group, a sulfonyl group, or a cyano group, or any combination of these groups, and is bonded to a silicon atom via an Si—C bond; R.sup.1 and R.sup.2 are optionally bonded together to form a ring structure; R.sup.3 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3; and the hydrolysis condensate contains an organic group having a salt structure formed between a counter anion derived from a nitric acid and a counter cation derived from a primary ammonium group, a secondary ammonium group, or a tertiary ammonium group.

The substrate processing method includes a liquid film forming step of forming a liquid film of a sulfuric acid-containing liquid on a principal surface of a substrate, an ozone-containing gas exposing step of filling an ozone-containing gas inside a processing chamber capable of housing the substrate to expose the liquid film to the ozone-containing gas, and a substrate heating step of heating the substrate in a state that the substrate is disposed inside the processing chamber which is filled with the ozone-containing gas and the liquid film is also formed on the principal surface of the substrate.

Among other things, one or more systems and techniques for removing a photoresist from a semiconductor wafer are provided. The photoresist is formed over the semiconductor wafer for patterning or material deposition. Once completed, the photoresist is removed in a manner that mitigates damage to the semiconductor wafer or structures formed thereon. In an embodiment, trioxygen liquid is supplied to the photoresist. The trioxygen liquid is activated using an activator, such as an ultraviolet activator or a hydrogen peroxide activator, to create activated trioxygen liquid used to remove the photoresist. In an embodiment, the activation of the trioxygen liquid results in free radicals that aid in removing the photoresist. In an embodiment, an initial photoresist strip, such as using a sulfuric acid hydrogen peroxide mixture, is performed to remove a first portion of the photoresist, and the activated trioxygen liquid is used to remove a second portion of the photoresist.

A substrate processing apparatus includes: a holding unit that holds a substrate; a liquid discharge unit; a first supply unit; a second supply unit; and a control unit that controls each unit. The liquid discharge unit discharges a processing liquid to the substrate held by the holding unit. The first supply unit supplies the processing liquid to the liquid discharge unit. The second supply unit supplies steam to the liquid discharge unit. The second supply unit includes: a steam generator that generates steam; a supply line; a stabilizing mechanism; a pressure gauge that measures a pressure of the steam flowing through the supply line; and a pressure adjustment mechanism. The control unit controls the pressure adjustment mechanism so that the pressure of the steam measured by the pressure gauge becomes a preset pressure.

The present application relates to a wafer processing device and a wafer processing method. The wafer processing device includes: a spraying unit configured to spray a photoresist-removing solution to remove a photoresist; and a heating unit mounted to the spraying unit and configured to heat the photoresist-removing solution to a preset temperature. According to the wafer processing device and wafer processing method of the present application, the photoresist-removing solution is heated to a preset temperature, so that the photoresist-removing solution dissolves the photoresist more rapidly and thoroughly. Therefore, the photoresist may be removed from a surface of the wafer more thoroughly, and further a yield of the wafer is increased.

A nozzle that mixes fluid containing steam or mist of pressurized pure water and processing liquid containing at least sulfuric acid and ejects mixed fluid of the fluid and the processing liquid, the nozzle comprising: at least one first ejection port ejecting the fluid; at least one second ejection port ejecting the processing liquid; and at least one lead-out path being in fluid communication with the at least one first ejection port and the at least one second ejection port and leading out the mixed fluid of the fluid ejected from the at least one first ejection port and the processing liquid ejected from the at least one second ejection port, wherein the at least one first ejection port or the at least one second ejection port is arranged to be directed to position deviated from central axis of the at least one lead-out path in a plan view.