A negative photosensitive resin composition containing an epoxy group-containing resin and a cationic polymerization initiator which includes a sulfonium salt represented by General Formula (I0). In Formula (I0), R1 and R2 represent an aryl group, a heterocyclic hydrocarbon group, or an alkyl group. R3 to R5 are an alkyl group, a hydroxy group, an alkoxy group, an alkylcarbonyl group, an arylcarbonyl group, an acyloxy group, an arylthio group, an alkylthio group, an aryl group, a heterocyclic hydrocarbon group, an aryloxy group, a hydroxy(poly)alkyleneoxy group, or a halogen atom. k is an integer of 0 to 4, m is an integer of 0 to 3, and n is an integer of 1 to 4. A is a group represented by —S—, —O—, —SO—, —SO.sub.2—, or —CO—. X.sup.− represents a monovalent polyatomic anion

##STR00001##

The rinsing composition according to embodiments of the present invention includes a non-ionic fluorinated surfactant and a basic additive containing tetraalkylammonium hydroxide in a specific range of content, so as to reduce the number of defects possibly occurring in a pattern after development of photoresist in a fine patterning process, while preventing pattern collapse.

The present application provides a backplane unit, a manufacturing method thereof, and a display device. The manufacturing method includes the following steps: forming a photoresist layer on an array substrate; performing exposure on at least a portion of the photoresist layer corresponding to a light-emitting element; forming a light-shielding layer on at least a side of the photoresist layer away from the array substrate, wherein the light-shielding layer exposes at least a side portion of the light-emitting element; and laterally stripping the photoresist layer on the light-emitting element with a stripping solution to obtain the backplane unit.

A method and cleaning composition for microelectronic devices or semiconductor substrates including at least one N alkanolamine; at least one hydroxylamine or derivatives of hydroxylamine or mixtures thereof; at least one polyfunctional organic acid with at least two carboxylic acid groups and water. The cleaning compositions can further include at least one corrosion inhibitor.

A method of stripping photoresist includes the steps of pattering a photoresist located on a substrate to generate an opening showing the substrate, forming a film including a first portion located on a top surface of the photoresist and a second portion located on a surface of the substrate, attaching a tape on the first portion, removing the tape and the first portion to show the top surface of the photoresist, and contacting the top surface and a lateral surface of the photoresist with a photoresist stripping solution to strip the photoresist. The photoresist can be removed completely by increasing its contacting area with the photoresist stripping solution.

A thermosetting silicon-containing compound contains one or more of structural units shown by the following general formulae (Sx-1), (Sx-2), and (Sx-3): ##STR00001##
where R.sup.1 represents a monovalent organic group containing both a phenyl group optionally having a substituent and a non-aromatic ring having 3 to 10 carbon atoms; and R.sup.2, R.sup.3 each represent the R.sup.1 or a monovalent organic group having 1 to 30 carbon atoms. Thus, the present invention provides a thermosetting silicon-containing compound usable in a silicon-containing resist underlayer film material capable of achieving contradictory properties of having both alkaline developer resistance and improved solubility in an alkaline stripping liquid containing no hydrogen peroxide.

This invention relates to a stripper composition for removing photoresist that may have excellent photoresist stripping force, inhibit corrosion of the under metal film in the stripping process, and effectively remove oxide, and a method for stripping photoresist using the same.

A process liquid composition for moving a lifting defect level of a photoresist pattern having hydrophobicity represented by a contact angle of 75° or larger of a photoresist surface with respect to water in a photoresist patterning process, and a preparation method thereof are proposed. The process liquid composition includes 0.00001% to 0.1% by weight of a fluorine-based surfactant, 0.00001% to 1.0% by weight of a triol derivative, a tetraol derivative, or a mixture thereof, and the remaining proportion of water. The process liquid composition has a surface tension of 45 mN/m or less and a contact angle of 65° or smaller.

A tile system for covering a surface. The tile system comprises a first tile assembly connected to a second tile assembly by a connector. Each tile assembly comprises a first tile stacked on a second tile, the first tile and the second tile joined to a reinforcing material disposed therebetween. The connector comprises a first component and a second component that is complementary to the first component. The first component is mounted to the first tile assembly, and the second component is mounted to the second tile assembly.

An object of the present invention is to provide a treatment liquid for manufacturing a semiconductor with which the occurrence of defects is suppressed such that a fine resist pattern or a fine semiconductor element can be manufactured. A treatment liquid for manufacturing a semiconductor according to an embodiment of the present invention includes: one compound (A) or two or more compounds (A) that satisfy the following requirement (a); one compound (B) or two or more compounds (B) that satisfy the following requirement (b); and one compound (C) or two or more compounds (C) selected from the group consisting of an Al compound and an NOx compound. In the treatment liquid, a total content of the compound (A) in the treatment liquid is 70.0 to 99.9999999 mass %, a total content of the compounds (B) is 10.sup.−10 to 0.1 mass %, and a ratio P of the compound (C) to the compound (B) represented by the following Expression I is 10.sup.3 to 10.sup.−6. Requirement (a): a compound that is selected from the group consisting of an amide compound, an imide compound, and a sulfoxide compound and of which a content in the treatment liquid is 5.0 to 99.9999999 mass % Requirement (b): a compound that is selected from the group consisting of an amide compound having 6 or more carbon atoms, an imide compound, and a sulfoxide compound and of which a content in the treatment liquid is 10.sup.−1 to 0.1 mass %
P=[Total Mass of Compound (C)]/[Total Mass of Compound (B)]  (Expression I)