G03F7/70066

Apparatus and a method of forming a particle shield

A lithography system includes a radiation source configured to generate a radiation, a reticle configured to redirect the radiation, a first type injection nozzle proximal to the reticle and configured to generate a first particle shield in a propagation path of the radiation, and a second type injection nozzle proximal to the radiation source and configured to generate a second particle shield in the propagation path of the radiation. The second type injection nozzle and the first type injection nozzle are of different types.

OPTIMIZATION USING A NON-UNIFORM ILLUMINATION INTENSITY PROFILE

A method for source mask optimization or mask only optimization used to image a pattern onto a substrate. The method includes determining a non-uniform illumination intensity profile for illumination; and determining one or more adjustments for the pattern based on the non-uniform illumination intensity profile until a determination that features patterned onto a substrate substantially match a target design. The non-uniform illumination intensity profile may be determined based on an illumination optical system and projection optics of a lithographic apparatus. In some embodiments, the lithographic apparatus includes a slit, and the non-uniform illumination profile is a through slit non-uniform illumination intensity profile. Determining the one or more adjustments for the pattern may include performing optical proximity correction, for example.

LITHOGRAPHIC SYSTEMS AND METHODS OF OPERATING THE SAME
20230095872 · 2023-03-30 ·

A lithographic system for projecting an image onto a workpiece using radiation is provided. The lithographic system includes: a support structure for supporting a workpiece; a radiation source for providing radiation to project an image on the workpiece; a reticle positioned between the radiation source and the workpiece; and a mask positioned adjacent the reticle, the mask being configured to block radiation from the radiation source, the mask including a heat removal apparatus.

Method for manufacturing array substrate, array substrate and display device

Disclosed are a method for manufacturing an array substrate, an array substrate and a display device. The method includes the following operations: sequentially forming a gate, a gate insulation layer, an active layer, an ohmic contact layer and a metal layer on a base substrate; forming a photolithography mask on the metal layer, a thickness of the photolithography mask being between 1.7 μm and 1.8 μm; exposing the photolithography mask through a mask plate to make a uniformity of the photolithography mask in a half-exposed area of the mask plate reach a preset uniformity; and manufacturing the array substrate based on the exposed photolithography mask.

ABNORMALITY DETECTION APPARATUS, ABNORMALITY DETECTION METHOD, STORAGE MEDIUM, SHUTTER APPARATUS, EXPOSURE APPARATUS, AND METHOD FOR MANUFACTURING ARTICLE
20230072488 · 2023-03-09 ·

An abnormality detection apparatus for detecting an abnormal operation in a shutter apparatus configured to block light includes one or more memories, and one or more processors that cooperate with the one or more memories to detect the abnormal operation using an abnormality detection model that outputs determination data for detecting the abnormal operation in a case where information about measurement data on the shutter apparatus is input to the abnormality detection model.

LITHOGRAPHIC APPARATUS WITH A PATTERNING DEVICE ENVIRONMENT
20170363975 · 2017-12-21 · ·

A lithographic apparatus injects gas between a patterning device and a patterning device masking blade to help protect the patterning device from contamination. The gas may be injected into the space defined between the patterning device and the patterning device blade by one or more gas supply nozzles that are arranged on at least one side of the patterning device. The one or more gas supply nozzles are coupled to a frame which a patterning device support structure moves relative to. Each nozzle may be constructed and arranged to supply gas over at least the patterning region of the reflective patterning device.

SELF-DAMPING SHUTTER APPARATUS FOR EXPOSURE SYSTEM OF PHOTOLITHOGRAPHY MACHINE
20170343883 · 2017-11-30 ·

A self-damping shutter apparatus for use in an exposure system of a photolithography machine, comprising: at least two pieces of shutter blades (1) for cutting off light source to an exposure area when the shutter is closed; a shutter driving arm (2), for driving the shutter blades (1) to synchronically open or close; a magnetic damping brake motor (3), for driving or braking the shutter driving arm (2), and the magnetic damping brake motor (3) drives and brakes, via the shutter driving arm (2), the shutter blades (1). The self-damping shutter apparatus for use in the exposure system of the photolithography machine increases consistency of opening or closing the shutter blades, improves a light shading effect of the shutter apparatus in an exposure, and improves stability in the process of opening or closuring the shutter blades. When the shutter blades complete actions of opening or closing, current is not needed, the magnetic damping braking motor enables the shutter blades to maintain the state of opening or closing, shortens duration of control current, reduces heat dissipation, and saves energy.

Apparatus And A Method Of Forming A Particle Shield
20220365451 · 2022-11-17 ·

A lithography system includes a radiation source configured to generate a radiation, a reticle configured to redirect the radiation, a first type injection nozzle proximal to the reticle and configured to generate a first particle shield in a propagation path of the radiation, and a second type injection nozzle proximal to the radiation source and configured to generate a second particle shield in the propagation path of the radiation. The second type injection nozzle and the first type injection nozzle are of different types.

EXTREME ULTRAVIOLET LITHOGRAPHY SYSTEM THAT UTILIZES PATTERN STITCHING

An extreme ultraviolet lithography system (10) that creates a pattern (230) having a plurality of densely packed parallel lines (232) on a workpiece (22) includes a patterning element (16); an EUV illumination system (12) that directs an extreme ultraviolet beam (13A) at the patterning element (16); a projection optical assembly (18) that directs the extreme ultraviolet beam diffracted off of the patterning element (16) at the workpiece (22); and a pattern blind assembly (26) positioned in a beam path (55) of the extreme ultraviolet beam (13A). The pattern blind assembly (26) shapes the extreme ultraviolet beam (13A) so that an exposure field (28) on the workpiece (22) has a polygonal shape.

Tubular linear actuator, patterning device masking device and lithographic apparatus

The present invention provides a tubular linear actuator, comprising: a tubular coil assembly comprising multiple tubular coils arranged next to each other in longitudinal direction of the tubular linear actuator and concentric with respect to a longitudinal axis of the tubular linear actuator, and a magnet assembly comprising a series of permanent magnets with alternating polarization direction extending in the longitudinal direction, wherein the magnet assembly is at least partially arranged in the coil assembly and movably with respect to the coil assembly, wherein the tubular coils comprise edge windings.