An exposure device, an exposure method and a photolithography method are provided. The exposure device includes an exposure light source and an optical-path assembly, the optical-path assembly is configured to guide light emitted by the exposure light source to an exposing position, the optical-path assembly includes a light valve array, the light emitted by the exposure light source is able to be guided to the light valve array and then guided to the exposing position after the light is transmitted or reflected by the light valve array, the light valve array includes a plurality of light valve units, and optical transmittance or reflectivity of each of the light valve units is adjustable.

The present disclosure relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present disclosure significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present disclosure allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present disclosure allows for free-form optimization, without the constraints required by conventional optimization techniques.

An exposure device, an exposure method and a photolithography method are provided. The exposure device includes an exposure light source and an optical-path assembly, the optical-path assembly is configured to guide light emitted by the exposure light source to an exposing position, the optical-path assembly includes a light valve array, the light emitted by the exposure light source is able to be guided to the light valve array and then guided to the exposing position after the light is transmitted or reflected by the light valve array, the light valve array includes a plurality of light valve units, and optical transmittance or reflectivity of each of the light valve units is adjustable.

An illumination intensity correction device can specify an illumination intensity over an illumination field of a lithographic projection exposure apparatus. The correction device has a plurality of rod-shaped individual stops arranged next to one another. A displacement drive can displace at least some of the individual stops at least along their respective rod axis. Free ends of the individual stops are individually displaceable using the displacement drive into a specified displacement position to specify an intensity correction of an illumination of the illumination field. The intensity correction acts along a correction dimension transverse with respect to the rod axes.

An illumination intensity correction device can specify an illumination intensity over an illumination field of a lithographic projection exposure apparatus. The correction device has a plurality of rod-shaped individual stops arranged next to one another. A displacement drive can displace at least some of the individual stops at least along their respective rod axis. Free ends of the individual stops are individually displaceable using the displacement drive into a specified displacement position to specify an intensity correction of an illumination of the illumination field. The intensity correction acts along a correction dimension transverse with respect to the rod axes.

The present disclosure relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present disclosure significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present disclosure allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present disclosure allows for free-form optimization, without the constraints required by conventional optimization techniques.

The present invention is directed to adjusting a light intensity distribution on an irradiation target surface into a desired distribution with use of a light source apparatus including a light emitting diode (LED) array. A light source apparatus includes an LED array including a plurality of LED chips, and a controller configured to control the plurality of LED chips. A light intensity distribution acquired from each of the plurality of LED chips is superimposed on a light intensity distribution oriented in a different direction from each other on a predetermined surface. The controller controls an output of at least one of the plurality of LED chips, thereby changing the light intensity distribution that the plurality of LED chips forms on the predetermined surface.

Methods and apparatus for determining an intensity profile of a radiation beam. The method comprises providing a diffraction structure, causing relative movement of the diffraction structure relative to the radiation beam from a first position wherein the radiation beam does not irradiate the diffraction structure to a second position wherein the radiation beam irradiates the diffraction structure, measuring, with a radiation detector, diffracted radiation signals produced from diffraction of the radiation beam by the diffraction structure as the diffraction structure transitions from the first position to the second position or vice versa, and determining the intensity profile of the radiation beam based on the measured diffracted radiation signals.

A method of determining compatibility of a patterning device with a lithographic apparatus. The method includes determining an intensity distribution of a conditioned radiation beam across a sensor plane of an illumination system of the lithographic apparatus. The method further includes using the determined intensity distribution to calculate a non-uniformity of intensity caused by contamination and/or degradation of a collector. The method further includes determining the effect of the non-uniformity on a characteristic of an image of the patterned radiation beam. The method further includes determining the compatibility of the patterning device with the lithographic apparatus based on the effect of the non-uniformity on the characteristic.

The present disclosure relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present disclosure significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present disclosure allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present disclosure allows for free-form optimization, without the constraints required by conventional optimization techniques.