A method for source mask optimization or mask only optimization used to image a pattern onto a substrate. The method includes determining a non-uniform illumination intensity profile for illumination; and determining one or more adjustments for the pattern based on the non-uniform illumination intensity profile until a determination that features patterned onto a substrate substantially match a target design. The non-uniform illumination intensity profile may be determined based on an illumination optical system and projection optics of a lithographic apparatus. In some embodiments, the lithographic apparatus includes a slit, and the non-uniform illumination profile is a through slit non-uniform illumination intensity profile. Determining the one or more adjustments for the pattern may include performing optical proximity correction, for example.

Disclosed are a divisional exposure apparatus which allows for forming a PAC layer uniformly on RGBW subpixels by a single mask process, using divisional exposure, in a large-size liquid crystal display with a COT structure, and a method of manufacturing a liquid crystal display using the same. To this end, the sum of illumination intensities at the center of an overlap region is controlled in the range of 120% to 130%, and gradually increases from 100% at the edge (boundary) of the overlap region. Accordingly, the cell gap between the RGB subpixels and the W subpixel is made uniform, thus preventing the problem of spots.

An illumination system of a microlithographic projection exposure apparatus comprises an optical integrator having a plurality of light entrance facets and a beam deflection array of reflective or transparent beam deflecting elements. Each beam deflecting element is configured to illuminate a spot on the optical integrator at a position that is variable by changing a deflection angle produced by the beam deflecting element. The illumination system further comprises a control unit which is configured to control the beam deflection elements in such a manner that a light pattern assembled from the spots on at least one of the light entrance facets is varied in response to an input command that a field dependency of the angular irradiance distribution in a mask plane shall be modified.

An assembly for a projection exposure apparatus for EUV projection lithography has an illumination optical unit for guiding illumination light to an illumination field, in which a lithography mask can be arranged. The illumination optical unit comprises a first facet mirror, which comprises a plurality of mirror arrays with respectively a plurality of individual mirrors. The individual mirrors provide individual mirror illumination channels for guiding illumination light partial beams to the illumination field. The mirror arrays of the first facet mirror are arranged in an array superstructure. Gaps extend along at least one main direction (HRα) between neighboring ones of the mirror arrays. Furthermore, the illumination optical unit comprises a second facet mirror, which comprises a plurality of facets, which respectively contribute to imaging a group of the individual mirrors of the field facet mirror into the illumination field via a group mirror illumination channel.

A method includes measuring a three-dimensional topography of a feature of a pattern of a lithography patterning device and calculating from the measurements wavefront phase information caused by the three-dimensional topography of the pattern.

A projection exposure method for exposing a radiation-sensitive substrate with at least one image of a pattern includes providing the pattern between an illumination system and a projection lens of a projection exposure apparatus so that the pattern is arranged in the region of an object plane of the projection lens and can be imaged via the projection lens into an image plane of the projection lens. The image plane is optically conjugate with respect to the object plane, and imaging-relevant properties of the pattern can be characterized by pattern data. The method also includes illuminating an illumination region of the pattern with an illumination radiation provided by the illumination system in accordance with an illumination setting which is specific to a use case and which can be characterized by illumination setting data.

Methods and apparatus for determining an intensity profile of a radiation beam. The method comprises providing a diffraction structure, causing a relative movement of the diffraction structure relative to the radiation beam from a first position, wherein the radiation beam does not irradiate the diffraction structure to a second position, wherein the radiation beam irradiates the diffraction structure, measuring, with a radiation detector, diffracted radiation signals produced from a diffraction of the radiation beam by the diffraction structure as the diffraction structure transitions from the first position to the second position or vice versa, and determining an intensity profile of the radiation beam based on the measured diffracted radiation signals.

The present invention is directed to adjusting a light intensity distribution on an irradiation target surface into a desired distribution with use of a light source apparatus including a light emitting diode (LED) array. A light source apparatus includes an LED array including a plurality of LED chips, and a controller configured to control the plurality of LED chips. A light intensity distribution acquired from each of the plurality of LED chips is superimposed on a light intensity distribution oriented in a different direction from each other on a predetermined surface. The controller controls an output of at least one of the plurality of LED chips, thereby changing the light intensity distribution that the plurality of LED chips forms on the predetermined surface.

An illumination adjustment apparatus, to adjust a cross slot illumination of a beam in a lithographic apparatus, includes a plurality of fingers to adjust the cross slot illumination to conform to a selected intensity profile. Each finger has a distal edge that includes at least two segments. The two segments form an indentation of the distal edge.

An illumination adjustment apparatus, to adjust a cross slot illumination of a beam in a lithographic apparatus, includes a plurality of fingers to adjust the cross slot illumination to conform to a selected intensity profile. Each finger has a distal edge that includes at least two segments. The two segments form an indentation of the distal edge.