A device (100) includes a light source (130) and a light guide (110). The light source (130) is configured to emit photoresist-curative electromagnetic radiation. The light guide (110) is arranged to receive the photoresist-curative electromagnetic radiation from the light source (130) and to guide the received radiation by total internal reflection, the light guide (110) including a pattern of emission points (210) on at least one surface of the light guide (110), the emission points (210) emitting the photoresist-curative electromagnetic radiation out of the light guide (110) by frustration of total internal reflection caused by the emission points (210).

An exposure apparatus that exposes a substrate to light by using an original in which a pattern is formed includes an illumination optical system arranged to guide illumination light to the original, the illumination light including first illumination light with a first wavelength and second illumination light with a second wavelength different from the first wavelength, and a projection optical system arranged to form a pattern image of the original by using the illumination light at a plurality of positions in an optical axis direction. The illumination optical system is configured to adjust a position deviation in a direction perpendicular to the optical axis direction between a pattern image formed by the first illumination light and a pattern image formed by the second illumination light by changing an incident angle of the illumination light entering the original.

An illumination optical apparatus illuminates a pattern on a mask with illumination light. The illumination optical apparatus includes an optical integrator arranged in an optical path of the illumination light, and a polarization member made of optical material with optical rotatory power, which is arranged in the optical path on an incidence side of the optical integrator, and which changes a polarization state of the illumination light. The illumination light from the polarization member is irradiated onto the pattern through a pupil plane of the illumination optical apparatus.

An illumination optical unit for EUV projection lithography includes a field facet mirror and a pupil facet mirror. A correction control device, which is used for the controlled displacement of at least some field facets that are usable as correction field facets, which are signal connected to displacement actuators, is embodied so that a correction displacement path for the correction field facets is so large that a respective correction illumination channel is cut off at the margin by the correction pupil facet so that the illumination light partial beam is not transferred in the entirety thereof from the correction pupil facet into the object field.

A device includes a light source and a light guide. The light source is configured to emit photoresist-curative electromagnetic radiation. The light guide is arranged to receive the photoresist-curative electromagnetic radiation from the light source and to guide the received radiation by total internal reflection, the light guide including a pattern of emission points on at least one surface of the light guide, the emission points emitting the photoresist-curative electromagnetic radiation out of the light guide by frustration of total internal reflection caused by the emission points.

An illumination optical apparatus includes a plurality of birefringent members made of a birefringent material and arranged in an optical path on an incidence side of an optical integrator. The members change a polarization state of illumination light such that first and second rays of the illumination light are polarized in different directions on the pupil plane. The birefringent members are arranged such that an optical path length of the first ray in the birefringent material is different from an optical path length of the second ray in the birefringent material, and are arranged so as to change the polarization state of the illumination light incident on the plurality of the birefringent members in a linear polarization state having a substantially single polarization direction such that each of the first and second rays is polarized in a substantially circumferential direction about the optical axis on the pupil plane.

The invention relates to an optical system of a microlithographic projection exposure apparatus, in particular for operation in the EUV, comprising at least one polarization-influencing arrangement having a first reflection surface and a second reflection surface, wherein the first reflection surface and the second reflection surface are arranged at an angle of 0°±10° or at an angle of 90°±10° relative to one another, wherein light incident on the first reflection surface during the operation of the optical system forms an angle of 45°±5° with the first reflection surface, and wherein the polarization-influencing arrangement is rotatable about a rotation axis running parallel to the light propagation direction of light incident on the first reflection surface during the operation of the optical system.

A projection exposure method for exposing a radiation-sensitive substrate with at least one image of a pattern of a mask is provided in which an illumination field of the mask is illuminated by illumination radiation with an operating wavelength λ that was provided by an illumination system.

A projection exposure method for exposing a radiation-sensitive substrate with at least one image of a pattern of a mask is provided in which an illumination field of the mask is illuminated by illumination radiation with an operating wavelength λ that was provided by an illumination system.

A device (100) includes a light source (130) and a light guide (110). The light source (130) is configured to emit photoresist-curative electromagnetic radiation. The light guide (110) is arranged to receive the photoresist-curative electromagnetic radiation from the light source (130) and to guide the received radiation by total internal reflection, the light guide (110) including a pattern of emission points (210) on at least one surface of the light guide (110), the emission points (210) emitting the photoresist-curative electromagnetic radiation out of the light guide (110) by frustration of total internal reflection caused by the emission points (210).