A multifunction UV or DUV (ultraviolet/deep-ultraviolet) lithography system uses a modified Schwarzschild flat-image projection system to achieve diffraction-limited, distortion-free and double-telecentric imaging over a large image field at high numerical aperture. A back-surface primary mirror enables wide-field imaging without large obscuration loss, and additional lens elements enable diffraction-limited and substantially distortion-free, double-telecentric imaging. The system can perform maskless lithography (either source-modulated or spatially-modulated), mask-projection lithography (either conventional imaging or holographic), mask writing, wafer writing, and patterning of large periodic or aperiodic structures such as microlens arrays and spatial light modulators, with accurate field stitching to cover large areas exceeding the image field size.

Embodiments disclosed herein include lithographic patterning systems for non-orthogonal patterning and devices formed with such patterning. In an embodiment, a lithographic patterning system comprises an actinic radiation source, where the actinic radiation source is configured to propagate light along an optical axis. In an embodiment, the lithographic patterning system further comprises a mask mount, where the mask mount is configurable to orient a surface of a mask at a first angle with respect to the optical axis. In an embodiment, the lithographic patterning system further comprises a lens module, and a substrate mount, where the substrate mount is configurable to orient a surface of a substrate at a second angle with respect to the optical axis.

A phase shifting device may include a plurality of metal layers and a plurality of first dielectric layers, a metal layer of the plurality of metal layers and a first dielectric layer of the plurality of first dielectric layers being alternately stacked in a first direction, and a second dielectric layer disposed on a side surface of the stacked structure in a second direction, wherein the first dielectric layer includes a first material having a first dielectric constant and the second dielectric layer includes a second material having a second dielectric constant, and wherein the second dielectric constant is greater than the first dielectric constant.

The disclosure relates to an optical system, for example a lithography system, comprising an aperture stop having an aperture with an edge for delimiting a beam path of the optical system on its outer circumference. The optical system also includes a heat stop arranged upstream of the aperture stop for partially shading the aperture stop. The edge of the aperture stop is excluded from the shading.

A catadioptric projection objective has a first objective part, defining a first part of the optical axis and imaging an object field to form a first real intermediate image. It also has a second, catadioptric objective part forming a second real intermediate image using the radiation from the first objective part. The second objective part has a concave mirror and defines a second part of the optical axis. A third objective part images the second real intermediate image into the image plane and defines a third part of the optical axis. Folding mirrors deflect the radiation from the object plane towards the concave mirror; and deflect the radiation from the concave mirror towards the image plane. The first part of the optical axis defined by the first objective part is laterally offset from and aligned parallel with the third part of the optical axis.

A projection objective for microlithography for imaging an object field onto an image field includes: a first partial objective for imaging the object field onto a first real intermediate image; a second partial objective for imaging the first intermediate image onto a second real intermediate image; a third partial objective for imaging the second intermediate image onto the image field, the third partial objective including an aperture; and a first folding mirror for deflecting radiation toward a concave mirror and a second folding mirror for deflecting the radiation from the concave mirror toward the image plane; in which the projection objective is an immersion projection objective in which during operation an immersion liquid is situated between a last lens surface and an image plane, and at least one surface of at least one lens in the second partial objective has an antireflection coating including at least six layers.

A projection objective configured to image an object field in an object plane into an image field in an image field plane includes a reflective unit, a first refractive unit, and a second refractive unit. An optical axis of the first refractive unit is parallel to but displaced from an optical axis of the second refractive unit. The reflective unit includes a first curved mirror and a second curved mirror. The second curved mirror is immediately downstream from the first curved mirror in a path of light from the object plane to the image plane. The projection objective is a microlithography projection objective.

Techniques are disclosed for magnification compensation and/or beam steering in optical systems. An optical system may include a lens system to receive first radiation associated with an object and direct second radiation associated with an image of the object toward an image plane. The lens system may include a set of lenses, and an actuator system to selectively adjust the set of lenses to adjust a magnification associated with the image symmetrically along a first and a second direction. The lens system may also include a beam steering lens to direct the first radiation to provide the second radiation. In some examples, the lens system may also include a second set of lenses, where the actuator system may also selectively adjust the second set of lenses to adjust the magnification along the first or the second direction. Related methods are also disclosed.

Provided in a phase shifting device including a plurality of metal layers and a plurality of first dielectric layers, a metal layer of the plurality of metal layers and a first dielectric layer of the plurality of first dielectric layers being alternately stacked in a first direction, and a second dielectric layer disposed on a side surface of the stacked structure in a second direction, wherein the first dielectric layer includes a first material having a first dielectric constant and the second dielectric layer includes a second material having a second dielectric constant, and wherein the second dielectric constant is greater than the first dielectric constant.

A catadioptric projection lens images a pattern of a mask in an effective object field of the projection lens into an effective image field of the projection lens with electromagnetic radiation with an operating wavelength λ<260 nm. The projection lens includes a multiplicity of lens elements and a multiplicity of mirrors including at least one concave mirror. The lens elements and mirrors define a projection beam path that extends from the object plane to the image plane and contains at least one pupil plane. The mirrors include a first mirror having a first mirror surface in the projection beam path between the object and pupil planes in the optical vicinity of a first field plane optically conjugate to the object plane. The mirrors also include a second mirror having a second mirror surface in the projection beam path between the pupil and image planes in the optical vicinity of a second field plane that is optically conjugate to the first field plane. The first mirror surface and/or the second mirror surface is a freeform surface.