A multifunction UV or DUV (ultraviolet/deep-ultraviolet) lithography system uses a modified Schwarzschild flat-image projection system to achieve diffraction-limited, distortion-free and double-telecentric imaging over a large image field at high numerical aperture. A back-surface primary mirror enables wide-field imaging without large obscuration loss, and additional lens elements enable diffraction-limited and substantially distortion-free, double-telecentric imaging. The system can perform maskless lithography (either source-modulated or spatially-modulated), mask-projection lithography (either conventional imaging or holographic), mask writing, wafer writing, and patterning of large periodic or aperiodic structures such as microlens arrays and spatial light modulators, with accurate field stitching to cover large areas exceeding the image field size.

The disclosure relates to an optical system, for example a lithography system, comprising an aperture stop having an aperture with an edge for delimiting a beam path of the optical system on its outer circumference. The optical system also includes a heat stop arranged upstream of the aperture stop for partially shading the aperture stop. The edge of the aperture stop is excluded from the shading.

There is provided a reflective image-forming optical system which is applicable to an exposure apparatus using, for example, EUV light and which is capable of increasing numerical aperture while enabling optical path separation of light fluxes. In a reflective imaging optical system (6) forming an image of a first plane (4) onto a second plane (7), the numerical aperture on a side of the second plane with respect to a first direction (X direction) on the second plane is greater than 1.1 times a numerical aperture on the side of the second plane with respect to a second direction (Y direction) crossing the first direction on the second plane. The reflecting imaging optical system has an aperture stop (AS) defining the numerical aperture on the side of the second plane, and the aperture stop has an elliptic-shaped opening of which size in a major axis direction (X direction) is greater than 1.1 times that in a minor axis direction (Y direction).

A lithography apparatus is disclosed, which comprises a mirror having at least two mirror segments which are joined together in such a way that an interspace is formed between the mirror segments, and a sensor for detecting the relative position of the mirror segments, wherein the sensor is arranged in the interspace between the mirror segments.

An optical system, such as a lithography system, comprises: a plate-shaped component, such as a stop element; an optionally frame-shaped holder for holding the component; and a plurality of webs for connecting the plate-shaped component to the holder. The plate-shaped component is releasably connected to the preferably wire-shaped webs. The plate-shaped component is attached to a carrying structure. The webs are releasably connected to the carrying structure.

There is provided a projection optical system that projects an image of an object onto an image plane. The projection optical system includes an imaging optical system including a first concave mirror, a convex mirror, and a second concave mirror; an optical member having a first reflecting surface and a second reflecting surface each redirecting an optical path; and a supporting member that supports the convex mirror. The first reflecting surface, the first concave mirror, the convex mirror, the second concave mirror, and the second reflecting surface are provided in that order in a direction of travel of light from an object plane. The optical member has a through hole having an opening on a side facing the convex mirror. The supporting member extends through the through hole and from the opening to the convex mirror.

Methods are disclosed for assigning a pupil facet of a pupil facet mirror of an illumination optical unit of a projection exposure apparatus to a field facet of a field facet mirror of the illumination optical unit for the definition of an illumination channel for a partial beam of illumination light.

A projection exposure method for exposing a radiation-sensitive substrate with at least one image of a pattern of a mask in a projection exposure apparatus includes using an anamorphic projection lens

An illumination optical unit for EUV projection lithography serves to illuminate an object field with illumination light. A transmission optical unit images field facets in a manner superposed on one another into the object field via illumination channels, which each have assigned to them one of the field facets and one pupil facet of a pupil facet mirror. The superposition optical unit has at least two mirrors for grazing incidence, downstream of the pupil facet mirror. The mirrors for grazing incidence produce an illumination angle bandwidth of an illumination light overall beam, composed of the illumination channels, in the object field. The bandwith is smaller for a plane of incidence parallel to the object displacement direction than for a plane perpendicular thereto. The result can be an illumination optical unit, by which a projection optical unit can be adapted to a configuration of an EUV light source for the illumination light.

A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.