A method of forming sub-resolution features that includes: exposing a photoresist layer formed over a substrate to a first ultraviolet light (UV) radiation having a first wavelength of 365 nm or longer through a mask configured to form features at a first critical dimension, the photoresist layer including first portions exposed to the first UV radiation and second portions unexposed to the first UV radiation after exposing with the first UV radiation; exposing the first portions and the second portions to a second UV radiation; and developing the photoresist layer after exposing the photoresist layer to the second UV radiation to form the sub-resolution features having a second critical dimension less than the first critical dimension.

Embodiments of a photolithographic machine with two or more camera systems (i.e., projection lens systems) are described herein. The photolithographic machine may include two or more cameras independently operated and controlled for exposing integrated circuit, flat panel display, and other substrates used in manufacturing semiconductor electronics. The cameras may be independently controlled to move laterally in the x-axis (i.e., not fixed). The independent control can include movement, focusing, tilt, reticle position, among other things.

A multifunction UV or DUV (ultraviolet/deep-ultraviolet) lithography system uses a modified Schwarzschild flat-image projection system to achieve diffraction-limited, distortion-free and double-telecentric imaging over a large image field at high numerical aperture. A back-surface primary mirror enables wide-field imaging without large obscuration loss, and additional lens elements enable diffraction-limited and substantially distortion-free, double-telecentric imaging. The system can perform maskless lithography (either source-modulated or spatially-modulated), mask-projection lithography (either conventional imaging or holographic), mask writing, wafer writing, and patterning of large periodic or aperiodic structures such as microlens arrays and spatial light modulators, with accurate field stitching to cover large areas exceeding the image field size.

A projection exposure device projects exposure light onto a substrate via a microlens array. The projection exposure device includes a scanning exposure unit that moves the microlens array along a scanning direction from one end toward another end of the substrate, and a microlens array shift unit that moves the microlens array in a shift direction intersecting with the scanning direction during movement of the microlens array caused by the scanning exposure unit.

An optical device includes a plurality of laser light sources, an output module having an optical modulator, and a time divider that is disposed between the plurality of laser light sources and the output module and that is configured to divide laser beams emitted from the plurality of laser light sources in time.

A micromirror array is a constituent part of an illumination-optical component of a projection exposure apparatus for projection lithography. A multiplicity of micromirrors are in groups in a plurality of mirror modules, each of which has a rectangular module border. The mirror modules are in module columns. At least some of the module columns are displaced with respect to one another along a column boundary line so that at least some of the mirror modules adjacent to one another over the boundary line are arranged displaced with respect to one another. Their module border sides running transversely to the boundary line are not aligned flush with one another. This micromirror array can have a relatively standardized production and can have a relatively small reflection folding angle on the object if the micromirror array represents a final illumination-optical component upstream of a reflective object to be illuminated.

The present disclosure relates to apparatus and methods for performing maskless lithography processes. A substrate rocessing apparatus includes a slab with a plurality of guiderails coupled to and extending along the slab. A first shuttle is disposed on the plurality of guiderails, a second shuttle is disposed on the first shuttle, and a metrology bar is coupled to the second shuttle. The etrology bar includes a first plurality of sensors coupled to the metrology bar. A second plurality of sensors coupled to the metrology bar are disposed laterally inward of the first plurality of sensors.

A system includes an illumination system, an optical element, a switching element and a detector. The illumination system includes a broadband light source that generates a beam of radiation. The dispersive optical element receives the beam of radiation and generates a plurality of light beams having a narrower bandwidth than the broadband light source. The optical switch receives the plurality of light 5 beams and transmits each one of the plurality of light beams to a respective one of a plurality of alignment sensor of a sensor array. The detector receives radiation returning from the sensor array and to generate a measurement signal based on the received radiation.

Embodiments of the present disclosure include a lithography apparatus, patterning system, and method of patterning a layered structure. The patterning system includes an image formation device and a reactive layer. The patterning system allows for creating lithography patterns in a single operation. The lithography apparatus includes the patterning system and an optical system. The lithography apparatus uses a plurality of wavelengths of light, along with the image formation device, to create a plurality of color patterns on the reactive layer. The method of patterning includes exposing the reactive layer to a plurality of wavelengths of light. The light reacts differently with different regions of the reactive layer, depending on the wavelength of light emitted onto the different regions. The method and apparatuses disclosed herein require only one image formation device and one lithography operation.

Methods, systems and apparatus for decreasing total distortion of a maskless lithography process are disclosed. Some embodiments provide methods, systems and apparatus for decreasing total distortion without physical modification of the apparatus.