A multifunction UV or DUV (ultraviolet/deep-ultraviolet) lithography system uses a modified Schwarzschild flat-image projection system to achieve diffraction-limited, distortion-free and double-telecentric imaging over a large image field at high numerical aperture. A back-surface primary mirror enables wide-field imaging without large obscuration loss, and additional lens elements enable diffraction-limited and substantially distortion-free, double-telecentric imaging. The system can perform maskless lithography (either source-modulated or spatially-modulated), mask-projection lithography (either conventional imaging or holographic), mask writing, wafer writing, and patterning of large periodic or aperiodic structures such as microlens arrays and spatial light modulators, with accurate field stitching to cover large areas exceeding the image field size.

A device (100) includes a light source (130) and a light guide (110). The light source (130) is configured to emit photoresist-curative electromagnetic radiation. The light guide (110) is arranged to receive the photoresist-curative electromagnetic radiation from the light source (130) and to guide the received radiation by total internal reflection, the light guide (110) including a pattern of emission points (210) on at least one surface of the light guide (110), the emission points (210) emitting the photoresist-curative electromagnetic radiation out of the light guide (110) by frustration of total internal reflection caused by the emission points (210).

A layout geometry of a lithographic mask is received. The layout geometry is partitioned into feature images, for example as selected from a library. The library contains predefined feature images and their corresponding precalculated mask 3D (M3D) filters. The M3D filter for a feature image represents the electromagnetic scattering effect of that feature image for a given source illumination. The mask function contribution from each of the feature images is calculated by convolving the feature image with its corresponding M3D filter. The mask function contributions are combined to determine a mask function for the lithographic mask illuminated by the source illumination.

An electronic device includes a substrate having contact pads disposed thereon and traces interconnecting the contact pads. A first integrated circuit (IC) die is mounted on the substrate and includes a predefined set of circuit components arranged on the first IC die in a first geometrical pattern, which is non-symmetrical under reflection about a given axis in a plane of the die. A second IC die is mounted on the substrate and includes the predefined set of circuit components arranged on the second IC die in a second geometrical pattern, which is a mirror image of the first geometrical pattern with respect to the given axis.

A control method for a spatial light modulator for an exposure apparatus having a projection optical system having an optical elements a state of each of which is allowed to be changed, the method sets states of optical elements located in a first area to a first distribution in which a first optical element in a first state and a second optical element in a second state are distributed in a first distribution pattern so that one portion of a light from the optical elements located in the first area enters the projection optical system and setting states of optical elements located in a second area to a second distribution in which the first optical element and the second optical element are distributed in a second distribution pattern to reduce a deterioration of the pattern image caused by a light that enters the projection optical system from the first area.

Metrology methods and targets are provided for reducing or eliminating a difference between a device pattern position and a target pattern position while maintaining target printability, process compatibility and optical contrast—in both imaging and scatterometry metrology. Pattern placement discrepancies may be reduced by using sub-resolved assist features in the mask design which have a same periodicity (fine pitch) as the periodic structure and/or by calibrating the measurement results using PPE (pattern placement error) correction factors derived by applying learning procedures to specific calibration terms, in measurements and/or simulations. Metrology targets are disclosed with multiple periodic structures at the same layer (in addition to regular target structures), e.g., in one or two layers, which are used to calibrate and remove PPE, especially when related to asymmetric effects such as scanner aberrations, off-axis illumination and other error sources.

Embodiments disclosed herein include a lithographic patterning system and methods of using such a system to form a microelectronic device. The lithographic patterning system includes an actinic radiation source, a stage having a surface for supporting a substrate with a resist layer, and a prism with a first surface over the stage, where the first surface has a masked layer and is substantially parallel to the surface of the stage. The prism may have a second surface that is substantially parallel to the first surface. The first and second surfaces are flat surfaces. The prism is a monolithic prism-mask, where an optical path passes through the system and exits the first surface of the prism through the mask layer. The system may include a layer disposed between the mask and resist layers. The mask layer of the prism may pattern the resist layer without an isolated mask layer.

An extreme ultraviolet lithography (EUVL) method includes providing at least two phase-shifting mask areas having a same pattern. A resist layer is formed over a substrate. An optimum exposure dose of the resist layer is determined, and a latent image is formed on a same area of the resist layer by a multiple exposure process. The multiple exposure process includes a plurality of exposure processes and each of the plurality of exposure processes uses a different phase-shifting mask area from the at least two phase-shifting mask areas having a same pattern.

A phase shift mask suitable for forming a via pattern on a transferred object is provided. The phase shift mask has a first pattern region and a second pattern region. The phase shift mask includes a substrate and a phase shift pattern layer. The phase shift pattern layer is located on the substrate and is disposed corresponding to one of the first pattern region and the second pattern region. An optical phase difference corresponding to the first pattern region and the second pattern region is basically 180 degrees. The first pattern region has a via region away from the second pattern region. The second pattern region includes a plurality of strip patterns surrounding the via region.

An image projection system is provided. The system can be used for performing lithography. The system includes a deuterium light source, a converging lens coupled to the deuterium light source. The system includes an aperture configured to provide image tiling disposed adjacent to the converging lens. The system includes a movable stage disposed adjacent to the aperture. A method of fabricating an optical device is provided. The method includes depositing a resist over a substrate and determining an exposure pattern for the optical device. The method includes exposing a portion of the resist with a light beam based on the determined exposure pattern. Exposing the portion of the resist includes directing the light beam from a deuterium light source to the substrate and developing the resist.