The present disclosure provides a secondary imaging optical lithography method and apparatus. The method includes: contacting a lithography mask plate with a flexible transparent transfer substrate closely, the flexible transparent transfer substrate comprising a first near-field imaging structure having a photosensitive layer; irradiating the photosensitive layer through the lithography mask plate with a first light source, so as to transfer a pattern of the lithography mask plate to the photosensitive layer; coating a device substrate for fabricating devices with a photoresist; contacting the flexible transparent transfer substrate with the photoresist-coated device substrate closely; irradiating the device substrate through the flexible transparent transfer substrate with a second light source, so as to transfer a pattern of the photosensitive layer to the photoresist of the device substrate; and developing the device substrate comprising an exposed photoresist, so as to obtain a device pattern conforming to the pattern of the lithography mask plate.

A film formation device for forming a film of a composition on the substrate by irradiating the composition on the substrate with light, includes an optical modulation unit for forming a distribution of an integrated light amount of the light on the substrate, and a control unit for controlling the optical modulation unit, in which the control unit controls the distribution of the integrated light amount of the optical modulation unit on the basis of residual film ratio characteristics of the composition and at least one of a curved shape of an imaging plane of an original template used in a subsequent process and a surface shape of a base film formed on the substrate.

Disclosed is a method for lithographically producing a target structure on a non-planar initial structure by exposing a photoresist by means of a lithography beam. In the inventive method, the topography of a surface of the non-planar initial structure is detected. A test parameter for the lithography beam is used and an interaction of the lithography beam with the initial structure and the resultant change in the lithography beam and/or the target structure to be produced are determined. A correction parameter for the lithography beam is determined such that the change in the lithography beam and/or the target structure to be produced that is caused by the interaction of the lithography beam with the initial structure is reduced. The desired target structure on the initial structure is produced by exposing the photoresist by means of the lithography beam using the correction parameter.

Disclosed are a photomask, an exposure apparatus, and a method of fabricating a three-dimensional semiconductor memory device using the same. The photomask may include a mask substrate, a first mask pattern on the mask substrate, and an optical path modulation substrate. The optical path modulation substrate may include a first region on a portion of the first mask pattern, and a second region on another portion of the first mask pattern. The second region has a thickness that is less than a thickness of the first region.

Disclosed is a method for lithographically producing a target structure on a non-planar initial structure by exposing a photoresist by means of a lithography beam. In the inventive method, the topography of a surface of the non-planar initial structure is detected. A test parameter for the lithography beam is used and an interaction of the lithography beam with the initial structure and the resultant change in the lithography beam and/or the target structure to be produced are determined. A correction parameter for the lithography beam is determined such that the change in the lithography beam and/or the target structure to be produced that is caused by the interaction of the lithography beam with the initial structure is reduced. The desired target structure on the initial structure is produced by exposing the photoresist by means of the lithography beam using the correction parameter.

An apparatus may include a substrate holder configured to hold a substrate. The substrate holder may include a first chucking region having a first area and an adjacent region extending from the chucking region. The apparatus may also include a superstrate holder configured to hold a superstrate. The superstrate holder may include a second chucking region having a second area. The second area may be larger than the first area and the superstrate holder faces the substrate holder forming a first gap between the adjacent region surface and the superstrate and a second gap between the substrate and the superstrate. The apparatus may also include a gas supply system between the first gap and the second gap. The superstrate holder may alter a shape of the held superstrate to decrease the first gap and increase the second gap.

An improved stage for the processing of large, thin substrates, such as glass and semiconductor panels. Processing includes lithography, inspection, metrology, grinding, and the like. The stage includes a chuck that moves over a base relative to a device for processing a substrate. The chuck conforms to a geometry of the base while moving relative to the base.

Disclosed are a photomask, an exposure apparatus, and a method of fabricating a three-dimensional semiconductor memory device using the same. The photomask may include a mask substrate, a first mask pattern on the mask substrate, and an optical path modulation substrate. The optical path modulation substrate may include a first region on a portion of the first mask pattern, and a second region on another portion of the first mask pattern. The second region has a thickness that is less than a thickness of the first region.

Disclosed is a method for lithographically producing a target structure on a non-planar initial structure by exposing a photoresist by means of a lithography beam. In the inventive method, the topography of a surface of the non-planar initial structure is detected. A test parameter for the lithography beam is used and an interaction of the lithography beam with the initial structure and the resultant change in the lithography beam and/or the target structure to be produced are determined. A correction parameter for the lithography beam is determined such that the change in the lithography beam and/or the target structure to be produced that is caused by the interaction of the lithography beam with the initial structure is reduced. The desired target structure on the initial structure is produced by exposing the photoresist by means of the lithography beam using the correction parameter.

An integrated circuit comprises a silicon cylinder having a sidewall upon which a plurality of semiconductor devices have been printed, one or more electrical leads electrically connected to each semiconductor device, and a plurality of radial wiring interconnects projecting outward from the sidewall.