A device (20) for detecting a temperature on a surface (15) of an optical element (14) for semiconductor lithography. The device includes an optical element (14) having a face (16) irradiated with electromagnetic radiation (7, 8, 43), a temperature recording device (21), and a temperature controlled element (22) configured to be temperature-controlled and arranged so that the predominant proportion of the intensity of the thermal radiation (25.2) detected by the temperature recording device and reflected by reflection at the surface of the optical element is emitted by the temperature-controlled element.

Also disclosed are an installation (1) for producing a surface (15) of an optical element (14) for semiconductor lithography and a method for producing a surface (15) of an optical element (14) of a projection exposure apparatus (30), wherein the surface is temperature-controlled and the surface temperature is detected during the temperature control.

Embodiments of the present disclosure include a lithography apparatus, patterning system, and method of patterning a layered structure. The patterning system includes an image formation device and a reactive layer. The patterning system allows for creating lithography patterns in a single operation. The lithography apparatus includes the patterning system and an optical system. The lithography apparatus uses a plurality of wavelengths of light, along with the image formation device, to create a plurality of color patterns on the reactive layer. The method of patterning includes exposing the reactive layer to a plurality of wavelengths of light. The light reacts differently with different regions of the reactive layer, depending on the wavelength of light emitted onto the different regions. The method and apparatuses disclosed herein require only one image formation device and one lithography operation.

A mirror including a substrate (110), a reflection layer system (120), and at least one continuous piezoelectric layer (130, . . . ) arranged between the substrate and the layer system. An electric field producing a locally variable deformation is applied to the piezoelectric layer via a first, layer-system-side electrode arrangement and a second, substrate-side electrode arrangement. At least one of the electrode arrangements is assigned a mediator layer (170) setting an at least regionally continuous profile of the electrical potential along the respective electrode arrangement. The electrode arrangement to which the mediator layer is assigned has a plurality of electrodes (160, . . . ), each of which is configured to receive an electrical voltage relative to the respective other electrode arrangement. In the region that couples two respectively adjacent electrodes, the mediator layer is subdivided into a plurality of regions (171, . . . ) that are electrically insulated from one another.

A pulse width expansion apparatus according to an aspect of the present disclosure includes a polarization beam splitter and a transfer optical system. The transfer optical system includes ¼-wavelength and reflection mirror pairs. The ¼-wavelength mirror pair include first and second ¼-wavelength mirrors. The first ¼-wavelength mirror provides ¼-wavelength phase shift and reflects a pulse laser beam. The second ¼-wavelength mirror provides ¼-wavelength phase shift and reflects the pulse laser beam reflected by the first ¼-wavelength mirror. The reflection mirror pair are disposed on an optical path before and after or between the ¼-wavelength mirror pair. The transfer optical system transfers an image of an input pulse laser beam on the polarization beam splitter to the optical path between the ¼-wavelength mirror pair at one-to-one magnification as a first transfer image and transfers the first transfer image to the polarization beam splitter at one-to-one magnification as a second transfer image.

A substrate holding board includes a first layer and a second layer forming an interfacial surface with the first layer. The first layer and the second layer contain diamond-like carbon. A refractive index of the first layer in a wavelength is higher than a refractive index of the second layer in the wavelength. A distance from the second layer to a topmost surface of the substrate holding board is smaller than a thickness of the first layer.

A mirror, e.g. for a microlithographic projection exposure apparatus, includes an optical effective surface, a mirror substrate, a reflection layer stack for reflecting electromagnetic radiation incident on the optical effective surface, at least one first electrode arrangement, at least one second electrode arrangement, and an actuator layer system situated between the first and the second electrode arrangements. The actuator layer system is arranged between the mirror substrate and the reflection layer stack, has a piezoelectric layer, and reacts to an electrical voltage applied between the first and the second electrode arrangements with a deformation response in a direction perpendicular to the optical effective surface. The deformation response varies locally by at least 20% in PV value for a predefined electrical voltage that is spatially constant across the piezoelectric layer.

A mirror structure includes an insulator layer and a first conductive layer disposed on the insulator layer. The first conductive layer includes a first non-conductive film disposed on the insulator layer. The first non-conductive film includes one or more first conductive segments. The mirror structure also includes a reflective layer disposed on the first conductive layer and an electro optical layer disposed on the reflective layer. The mirror structure further includes a second conductive layer disposed on the electro optical layer. The second conductive layer includes a second non-conductive film disposed on the electro optical layer. The second non-conductive film includes one or more second conductive segments.

A method of making a mirror for use with extreme ultraviolet or x-ray radiation includes: i) providing a base substrate having a curved surface, wherein the curved surface deviates from a curvature of a target mirror surface at high spatial frequencies corresponding to spatial periods less than 2 mm; and ii) securing a first side of a thin plate to the curved surface of the base substrate to cover the curved surface, wherein the plate has a thickness thin enough to conform to the curvature of the target mirror surface and thick enough to attenuate deviations at the high spatial frequencies on a second side of the thin plate opposite the first side that are caused by the deviations on the curved surface of the base substrate. A mirror made by the method is also disclosed.

An optical element (1)includes: a substrate (2), applied to the substrate (2), a multilayer system (3) which reflects EUV radiation (4), and applied to the multilayer system (3), a protective layer system (5) having an uppermost layer (5a). Nanoparticles (7) are embedded into the material of the uppermost layer (5a) of the protective layer system (5) which nanoparticles contain at least one metallic material. An EUV lithography system which includes at least one such optical element (1) designed as indicated above, and a method of forming nanoparticles (7) in the uppermost layer (5a) of the protective layer system (5) are also disclosed.

The present disclosure provides a method for fabricating an anti-reflective layer on a quartz surface by using a metal-induced self-masking etching technique, comprising: performing reactive ion etching to a metal material and a quartz substrate by using a mixed gas containing a fluorine-based gas, wherein metal atoms and/or ions of the metal material are sputtered to a surface of the quartz substrate, to form a non-volatile metal fluoride on the surface of the quartz substrate; forming a micromask by a product of etching generated by reactive ion etching gathering around the non-volatile metal fluoride; and etching the micromask and the quartz substrate simultaneously, to form an anti-reflective layer having a sub-wavelength structure.