A laser processing method of performing laser processing on a transparent material that is transparent to ultraviolet light by using a laser processing system includes: performing relative positioning of a transfer position of a transfer image and the transparent material in an optical axis direction of a pulse laser beam so that the transfer position is set at a position inside the transparent material at a predetermined depth ΔZsf from a surface of the transparent material in the optical axis direction; and irradiating the transparent material with the pulse laser beam having a pulse width of 1 ns to 100 ns inclusive and a beam diameter of 10 μm to 150 μm inclusive at the transfer position.

A method and apparatus for optical metrology is disclosed. There is disclosed, for example, a method involving a radiation intensity distribution for a target measured using an optical component at a gap from the target, the method including calculating a correction factor for the variation of radiation intensity of the radiation intensity distribution as a function of variation of the distance of the gap.

A system and method for patterning of a substrate at sub-micron length scales using interference lithography that includes a substrate; a chuck that promotes substrate motion; at least two EM beams; a beam phase controller, wherein the phase controller modifies phases of the EM beams with respect to each other creating an interference pattern; a displacement sensor that measures the substrate displacement; and a feedback control mechanism configured to monitor and synchronize the substrate motion with the interference pattern using the beam phase controller and the displacement sensor.

The present disclosure provides a method of forming a photoresist pattern and a projection exposure apparatus. The forming method includes: providing a photoresist layer, and disposing the photoresist layer under a projection objective, wherein a light refracting plate is located between the photoresist layer and the projection objective; and performing an exposure processing on the photoresist layer through the projection objective and the light refracting plate, and forming an exposure image in the photoresist layer, wherein the light refracting plate is configured to reduce a wavelength of optical waves entering the photoresist layer.

An apparatus (100) for receiving input radiation (108) and broadening a frequency range of the input radiation so as to provide broadband output radiation (110). The apparatus comprises a fiber (102), wherein the fiber (102) may comprise a hollow core (104) for guiding radiation propagating through the fiber (102). The apparatus (100) further comprises an apparatus for providing a gas mixture (106) within the hollow core (104). The gas mixture (106) comprises a hydrogen component, and a working component, wherein the working component is for broadening a frequency range of a received input radiation (108) so as to provide the broadband output radiation (110). The apparatus may be included in a radiation source.

Provided is an interferometer system that irradiates an object to be measured with measuring light to thereby measure the position of the object to be measured. The interferometer system includes a laser light source; an interferometer configured to separate laser light emitted from an emission opening of the laser light source into the measuring light and reference light; and an optical path protecting member configured to surround an optical axis such that the laser light passes through the inside thereof and of which one opening is in contact with the emission opening.

Extreme ultra-violet (EUV) lithography ruling engine specifically configured to print one-dimensional lines on a target workpiece includes source of EUV radiation; a pattern-source defining 1D pattern: an illumination unit (IU) configured to irradiate the pattern-source; and projection optics (PO) configured to optically image, with a reduction factor N>1, the 1D pattern on image surface that is optically-conjugate to the 1D pattern. Irradiation of the pattern-source can be on-axis or off-axis. While 1D pattern has first spatial frequency, its optical image has second spatial frequency that is at least twice the first spatial frequency. The pattern-source can be flat or curved. The IU may include a relay reflector. A PO's reflector may include multiple spatially-distinct reflecting elements aggregately forming such reflector. The engine is configured to not allow formation of optical image of any 2D pattern that has spatial resolution substantially equal to a pitch of the 1D pattern of the pattern-source.

A laser processing method of performing laser processing on a transparent material that is transparent to ultraviolet light by using a laser processing system includes: performing relative positioning of a transfer position of a transfer image and the transparent material in an optical axis direction of a pulse laser beam so that the transfer position is set at a position inside the transparent material at a predetermined depth ΔZsf from a surface of the transparent material in the optical axis direction; and irradiating the transparent material with the pulse laser beam having a pulse width of 1 ns to 100 ns inclusive and a beam diameter of 10 μm to 150 μm inclusive at the transfer position.

A method of processing a substrate is disclosed herein. The method includes applying a photoresist layer comprising a photoacid generator to a substrate, wherein a first portion of the photoresist layer has been exposed unprotected by a photomask to a radiation light in a lithographic exposure process. The method also includes applying an electric field to alter movement of photoacid generated from the photoacid generator substantially in a vertical direction, wherein the electric field is applied by a first alternating pair of a positive voltage electrode and a negative voltage electrode and a second alternating pair of a positive voltage electrode and a negative voltage electrode.

The present invention provides a mask plate, relating to a field of exposure technology, which can solve the problem of an existing mask plate that a resolution is limited by an effect of diffraction. The mask plate of the invention includes: a pattern structure, including a light blocking region and a light transmitting region; and a total reflection structure provided at an light-exiting side of the pattern structure, the total reflection structure including a high refraction layer and a first low refraction layer sequentially provided in a direction away from the pattern structure and contacting each other, wherein a refractive index of the high refraction layer is greater than a refractive index of the first low refraction layer.