An exposure device includes a rotation driving section that rotationally drives an exposure object; a light irradiation section that irradiates an exposure surface of the exposure object with laser light; a slide moving section secured to the rotation driving section or the light irradiation section, and moving the rotation driving section or the light irradiation section along the exposure surface in a direction crossing a direction of rotation of the rotation driving section; a signal generating section that transmits an analog modulating signal to the light irradiation section in accordance with a rotation synchronization signal from the rotation driving section, the analog modulating signal causing an intensity of the laser light to be changed; and a controlling section that controls movements of the rotation driving section, the slide moving section, and the light irradiation section.

A projection exposure method for exposing a radiation-sensitive substrate with at least one image of a pattern of a mask in a projection exposure apparatus includes using an anamorphic projection lens

A super-resolution system for nano-patterning is disclosed, comprising an exposure head that enables a super-resolution patterning exposures. The super-resolution exposures are carried out using electromagnetic radiation and plasmonic structure, and in some embodiments, plasmonic structures having specially designed super-resolution apertures, of which the “bow-tie” and “C-aperture” are examples. These apertures create small but bright images in the near-field transmission pattern. A writing head comprising one or more of these apertures is held in close proximity to a medium for patterning. In some embodiments, a data processing system is provided to re-interpret the data to be patterned into a set of modulation signals used to drive the multiple individual channels and multiple exposures, and a detection means is provided to verify the data as written.

An optical arrangement for use in an optical imaging device includes an optical element unit and a detection device and/or an actuating device. The optical element unit includes at least one optical element. The detection device determines in a plurality of M degrees of freedom in each case a detection value which is representative of a relative position or orientation of an element reference of the optical element in relation to a primary reference of the detection device in the respective degree of freedom. The detection device includes a plurality of N detection units, each of which outputs a detection signal which is representative of a distance and/or a displacement of the detection unit in relation to a secondary reference assigned to the optical element and the respective detection unit.

Semiconductor processing apparatuses and methods are provided in which a semiconductor wafer is flipped and then rotated between patterning of front and back sides of the semiconductor wafer by first and second reticles, respectively. In some embodiments, a method includes patterning, by a first reticle, a first layer on a first side of a semiconductor wafer while the first side of the semiconductor wafer is facing a first direction. The semiconductor wafer is then flipped. A second side of the semiconductor wafer that is opposite the first side faces the first direction after the flipping the semiconductor wafer. The semiconductor wafer is then rotated about a rotational axis extending along the first direction, and a second layer on the second side of the semiconductor wafer is patterned by a second reticle.

Semiconductor processing apparatuses and methods are provided in which a semiconductor wafer is flipped and then rotated between patterning of front and back sides of the semiconductor wafer by first and second reticles, respectively. In some embodiments, a method includes patterning, by a first reticle, a first layer on a first side of a semiconductor wafer while the first side of the semiconductor wafer is facing a first direction. The semiconductor wafer is then flipped. A second side of the semiconductor wafer that is opposite the first side faces the first direction after the flipping the semiconductor wafer. The semiconductor wafer is then rotated about a rotational axis extending along the first direction, and a second layer on the second side of the semiconductor wafer is patterned by a second reticle.

A super-resolution system for nano-patterning is disclosed, comprising an exposure head that enables a super-resolution patterning exposures. The super-resolution exposures are carried out using electromagnetic radiation and plasmonic structures, and in some embodiments, plasmonic structures having specially designed super-resolution apertures, of which the “bow-tie” and “C-aperture” are examples. These apertures create small but bright images in the near-field transmission pattern. A writing head comprising one or more of these apertures is held in close proximity to a medium for patterning. In some embodiments, a data processing system is provided to re-interpret the data to be patterned into a set of modulation signals used to drive the multiple individual channels and multiple exposures, and a detection means is provided to verify the data as written.

A pattern forming apparatus comprising: a rotary drum that includes a cylindrical outer circumferential surface which is curved at a predetermined radius from a predetermined center line, that rotates about the center line in a state in which a part of a sheet substrate is supported in a length direction of the sheet substrate along the outer circumferential surface; a pattern forming part that forms the pattern on the sheet substrate at a first specific position; a scale disk that is fixed to an end portion of the rotary drum in a direction in which the center line extends while being coaxial with the center line and that includes a circular scale; and a first reading mechanism that is arranged to oppose with the scale formed at the outer circumferential surface of the scale disk, that is arranged at substantially same azimuth as an azimuth.

An extreme ultraviolet lithography system (10) that creates a new pattern (330) having a plurality of densely packed parallel lines (332) on a workpiece (22), the system (10) includes a patterning element (16); an EUV illumination system (12) that directs an extreme ultraviolet beam (13B) at the patterning element (16); a projection optical assembly (18) that directs the extreme ultraviolet beam diffracted off of the patterning element (16) at the workpiece (22) to create a first stripe (364) of generally parallel lines (332) during a first scan (365); and a control system (24). The workpiece (22) includes an existing pattern (233) that is distorted. The control system (24) selectively adjusts a control parameter during the first scan (365) so that the first stripe (364) is distorted to more accurately overlay the portion of existing pattern (233) positioned under the first stripe (364).

An optical arrangement for use in an optical imaging device includes an optical element unit and a detection device and/or an actuating device. The optical element unit includes at least one optical element. The detection device determines in a plurality of M degrees of freedom in each case a detection value which is representative of a relative position or orientation of an element reference of the optical element in relation to a primary reference of the detection device in the respective degree of freedom. The detection device includes a plurality of N detection units, each of which outputs a detection signal which is representative of a distance and/or a displacement of the detection unit in relation to a secondary reference assigned to the optical element and the respective detection unit.