The technology disclosed relates to high utilization of donor material in a writing process using Laser-Induced Forward Transfer. Specifically, the technology relates to reusing, or recycling, unused donor material by recoating target substrates with donor material after a writing process is performed with the target substrate. Further, the technology relates to target substrates including a pattern of discrete separated dots to be individually ejected from the target substrate using LIFT.

The present invention quickly calculates values of optimal excitation parameters which are set in lenses in multiple stages. A multi charged particle beam adjustment method includes forming a multi charged particle beam, calculating, for each of lenses in two or more stages disposed corresponding to object lenses in two or more stages, a first rate of change and a second rate of change in response to change in at least an excitation parameter, the first rate of change being a rate of change in a demagnification level of a beam image of the multi charged particle beam, the second rate of change being a rate of change in a rotation level of the beam image, and calculating a first amount of correction to the excitation parameter of each of the lenses based on an amount of correction to the demagnification level and the rotation level of the beam image, the first rate of change, and the second rate of change.

A device, a computer program, a computer readable medium and a method for controlling focus of a laser beam during a micro sweep are disclosed. The laser beam is received to an acousto-optic deflector, and acoustic waves are provided to the acousto-optic deflector. The acoustic waves are varied in frequency over time to vary a deflection angle of the laser beam over time thereby achieving the micro sweep of the laser beam. Furthermore, a rate of variation in frequency of the acoustic waves is adapted over a time of the micro sweep in such a way that differences in frequencies over the time of the micro sweep of the acoustic waves are caused in the acousto-optic deflector over a width of the laser beam in a direction parallel to the micro sweep when passing through the acousto-optic deflector, where the differences in frequencies over the time of the micro sweep are such that they cause a desired focus of the laser beam in a direction parallel with the micro sweep over the micro sweep.

A preparation method (100) for a three-dimensional micro-nano morphological structure manufactured by a laser direct writing lithography machine, comprising: step 110, providing a three-dimensional model diagram; step 120, dividing the three-dimensional model diagram in a height direction to obtain at least one height interval; and step 130, projecting the three-dimensional model diagram onto a plane to obtain a mapping relationship, wherein the mapping relationship comprises coordinates, on the plane, corresponding to each point on the three-dimensional model diagram, and wherein the height of each point on the three-dimensional model diagram corresponds to a height value in a corresponding height interval; and making the mapping relationship correspond to an exposure dose according to the mapping relationship, and performing lithography on the basis of the exposure dose. Any three-dimensional micro-nano morphological structure can be obtained. Further disclosed is a three-dimensional micro-nano morphology structure manufactured by a laser direct writing lithography machine.

A lithography method to pattern a first semiconductor wafer is disclosed. An optical mask is positioned over the first semiconductor wafer. A first region of the first semiconductor wafer is patterned by directing light from a light source through transparent regions of the optical mask. A second region of the first semiconductor wafer is patterned by directing energy from an energy source to the second region, wherein the patterning of the second region comprises direct-beam writing.

In one embodiment, a multi-charged-particle-beam writing method includes dividing a data path into a plurality of first blocks based on at least either one of each of a plurality of input/output circuits and a plurality of wiring groups, and calculating a first shift amount for multiple beams for each of the plurality of first blocks. The data path is for inputting control data to a cell array on a blanking aperture array substrate. The control data is for controlling ON/OFF of each beam of the multiple beams. Each of the plurality of wiring groups includes a plurality of pieces of wiring connected to the plurality of input/output circuits and grouped together based on inter-wiring distance. The first shift amount is due to at least one of an electric field and a magnetic field for each of the plurality of first blocks. An irradiation position or a dose of the multiple beams is corrected based on the first shift amount, and irradiation is performed.

Aspects of disclosure provide a method for attaching wiring connections to a component using both design and field measured data of the component to produce accurate wiring connections.

Examples described herein provide a system, a software application, and a method of a lithography process to write multiple tones in a single pass. A system includes a stage and a lithography system. The lithography system includes image projection systems, a controller, and memory. The controller is coupled to the memory, which stores instruction code. Execution of the instruction code by the controller causes the controller to control the stage and the image projection systems to iteratively expose a photoresist supported by the stage and to move the stage relative to the image projection systems a step distance between sequential pairs of the exposures. Each exposure includes using write beam(s) projected from the image projection systems. Each exposure is at a respective one of different dosage amounts. An accumulation of the different dosage amounts is a full tone dosage amount for the photoresist.

Disclosed is a method for lithographically producing a target structure on a non-planar initial structure by exposing a photoresist by means of a lithography beam. In the inventive method, the topography of a surface of the non-planar initial structure is detected. A test parameter for the lithography beam is used and an interaction of the lithography beam with the initial structure and the resultant change in the lithography beam and/or the target structure to be produced are determined. A correction parameter for the lithography beam is determined such that the change in the lithography beam and/or the target structure to be produced that is caused by the interaction of the lithography beam with the initial structure is reduced. The desired target structure on the initial structure is produced by exposing the photoresist by means of the lithography beam using the correction parameter.

Aspects of disclosure provide a method for attaching wiring connections to a component using both design and field measured data of the component to produce accurate wiring connections.