The invention provides a method for thermo-mechanical control of a heat sensitive element (Ml) subject to a heat load, comprising: -providing a non-linear thermo-mechanical model of the heat sensitive element describing a dynamical relationship between characteristics of the heat load and deformation of the heat sensitive element; -calculating a control signal on the basis of an optimization calculation of the non-linear model, -providing an actuation signal to a heater (HE), wherein the actuation signal is at least partially based on the control signal, -heating the heat sensitive element by the heater on the basis of the actuation signal.

Methods for calibrating a photolithographic system are disclosed. A cold lens contour for a reticle design and at least one hot lens contour for the reticle design are generated from which a process window is defined. Aberrations induced by a lens manipulator are characterized in a manipulator model and the process window is optimized using the manipulator model. Aberrations are characterized by identifying variations in critical dimensions caused by lens manipulation for a plurality of manipulator settings and by modeling behavior of the manipulator as a relationship between manipulator settings and aberrations. The process window may be optimized by minimizing a cost function for a set of critical locations.

A method for calculating a spatial map associated with a component, the spatial map indicating spatial variations of thermal expansion parameters in the component, the method comprising: providing or determining a temperature distribution in the component as a function of time; calculating the spatial map associated with the component using the provided or determined temperature distribution in the component and optical measurements of a radiation beam that has interacted directly or indirectly with the component, the optical measurements being time synchronized with the provided or determined temperature distribution in the component.

A mirror, such as for a microlithographic projection exposure apparatus, comprises an optical effective surface. The mirror comprises a mirror substrate and a plurality of cavities in the mirror substrate. Fluid can be applied to each cavity. A deformation is transferable to the optical effective surface by varying the fluid pressure in the cavities. Related optical systems methods are provided.

Methods and systems for determining a mapped intensity metric are described. Determining the mapped intensity metric includes determining an intensity metric for a manufacturing system. The intensity metric is determined based on a reflectivity of a location on a substrate and a manufacturing system characteristic. Determining the mapped intensity metric also includes determining a mapped intensity metric for a reference system. The reference system has a reference system characteristic. The mapped intensity metric is determined based on the intensity metric, the manufacturing system characteristic, and the reference system characteristic, to mimic determination of the intensity metric for the manufacturing system using the reference system. In some embodiments, the reference system is virtual, and the manufacturing system is physical.

The method for optimizing a light source in integrated circuit manufacturing, includes following steps: S1, providing an initial light source; S2, performing region segmentation according to light intensity distribution of the initial light source to obtain a plurality of sub light source regions; S3, providing at least two matching patterns and matching them with each sub light source region to obtain at least two matching results corresponding to each sub light source region; S4, performing calculating based on the at least two matching results and each sub light source region to obtain a best matching pattern corresponding to each sub light source region; and S5, generating a light source to be optimized based on the best matching pattern corresponding to each sub light source region.

A method of enhancing a layout pattern includes determining a vector transmission cross coefficient (vector-TCC) operator of an optical system of a lithographic system based on an illumination source of the optical system and an exit pupil of the optical system of the lithographic system. The method also includes performing an optical proximity correction (OPC) operation of a layout pattern of a photo mask to generate an OPC corrected layout pattern. The OPC operation uses the vector-TCC operator to determine a projected pattern of the layout pattern of the photo mask on a wafer. The method includes producing the OPC corrected layout pattern on a mask blank to create a photo mask.

A method of enhancing a layout pattern includes determining a vector transmission cross coefficient (vector-TCC) operator of an optical system of a lithographic system based on an illumination source of the optical system and an exit pupil of the optical system of the lithographic system. The method also includes performing an optical proximity correction (OPC) operation of a layout pattern of a photo mask to generate an OPC corrected layout pattern. The OPC operation uses the vector-TCC operator to determine a projected pattern of the layout pattern of the photo mask on a wafer. The method includes producing the OPC corrected layout pattern on a mask blank to create a photo mask.

The method for full-chip quick simulation of negative tone development photolithography process, analyze the elastic deformation of the photoresist based on elastic mechanics, sets one of the stress and strain variables as an equivalent of a deformation of the photoresist, to obtain an equivalent equation, performs an approximate calculation of the equivalent equation using a Taylor expansion formula to obtain an approximate value of stress or strain, and adjusts the light field distribution according to the approximate value to obtain an appropriate acid concentration distribution, which can make the exposed image closest to a target image. It can effectively analyze the deformation of the photoresist during the thermal shrinkage effect process and improve the accuracy of the lithography calculation process. At the same time, the Taylor expansion is used to fit the thermal shrinkage effect, which can improve the calculation speed.

A method of enhancing a layout pattern includes determining a vector transmission cross coefficient (vector-TCC) operator of an optical system of a lithographic system based on an illumination source of the optical system and an exit pupil of the optical system of the lithographic system. The method also includes performing an optical proximity correction (OPC) operation of a layout pattern of a photo mask to generate an OPC corrected layout pattern. The OPC operation uses the vector-TCC operator to determine a projected pattern of the layout pattern of the photo mask on a wafer. The method includes producing the OPC corrected layout pattern on a mask blank to create a photo mask.