Embodiments of a photolithographic machine with two or more camera systems (i.e., projection lens systems) are described herein. The photolithographic machine may include two or more cameras independently operated and controlled for exposing integrated circuit, flat panel display, and other substrates used in manufacturing semiconductor electronics. The cameras may be independently controlled to move laterally in the x-axis (i.e., not fixed). The independent control can include movement, focusing, tilt, reticle position, among other things.

A processing apparatus includes a driver configured to drive a controlled object, and a controller configured to control the driver by generating a command value to the driver based on a control error. The controller includes a first compensator configured to generate a first command value based on the control error, a second compensator configured to generate a second command value based on the control error, and an adder configured to obtain the command value by adding the first command value and the second command value. The second compensator includes a neural network for which a parameter value is decided by learning, and input parameters input to the neural network include at least one of a driving condition of the driver and an environment condition in a periphery of the controlled object in addition to the control error.

An exposure apparatus according to an embodiment is configured to implement an exposure process for exposing a substrate to light. The exposure apparatus includes a stage, a storage device, and a controller. The stage is configured to hold the substrate. The storage device is configured to store a plurality of correction maps each having an alignment correction value that differs from each other. The controller is configured to control in the exposure process an exposure position relative to the substrate by selecting a correction map from the correction maps based on measurement results of a plurality of alignment marks arranged on the substrate or an amount of warpage of the substrate and moving the stage based on the selected correction map.

A computer-implemented defect prediction method for a device manufacturing process involving processing a pattern onto a substrate. Non-correctable error is used to help predict locations where defects are likely to be present, allowing improvements in metrology throughput. In an embodiment, non-correctable error information relates to imaging error due to limitations on, for example, the lens hardware, imaging slit size, and/or other physical characteristics of the lithography system. In an embodiment, non-correctable error information relates to imaging error induced by lens heating effects.

A light source for EUV radiation is provided. The light source includes a target droplet generator, a laser generator, and a controller. The target droplet generator is configured to provide target droplets to a source vessel. The laser generator is configured to provide a plurality of first laser pulses according to a control signal to irradiate the target droplets in the source vessel to generate plasma as the EUV radiation. The controller is configured to provide the control signal according to the temperature of the source vessel and droplet positions of the target droplets. When the temperature of the source vessel exceeds a temperature threshold value and a standard deviation of the droplet positions of the target droplets exceeds a first standard deviation threshold value, the controller is configured to provide the control signal to the laser generator, so as to stop providing the first laser pulses.

A system for deep ultraviolet (DUV) optical lithography includes an optical source apparatus including N optical oscillators, N being an integer number greater than or equal to two, and each of the N optical oscillators is configured to produce a pulse of light in response to an excitation signal; and a control system coupled to the optical source apparatus. The control system is configured to determine a corrected excitation signal for a first one of the N optical oscillators based on an input signal, the input signal including an energy property of a pulse of light produced by another one of the N optical oscillators.

An apparatus includes a decision module that is configured to: receive a performance metric relating to performance conditions of an optical system emitting a light beam; estimate, based on the performance metric and a predetermined learning model, an effectiveness of a proposed change to the optical system; and output a change command to the optical system if it is estimated that the proposed change to the optical system would be effective.

An apparatus for reducing hydrogen permeation of a mask is provided when generating extreme ultraviolet (EUV) radiation. The apparatus includes a mask stage configured to hold the mask, a hydrogen dispensing nozzle configured to eject hydrogen below the mask, and a trajectory correcting assembly. The trajectory correcting assembly includes a correcting nozzle and a gas flow detector. The correcting nozzle is configured to dispense at least one flow adjusting gas to adjust a trajectory of the hydrogen away from the mask to reduce hydrogen permeation at an edge of the mask. The gas flow detector is configured to measure a variation of an airflow of the hydrogen adjusted by the at least one flow adjusting gas.

Extreme ultraviolet (EUV) lithography systems are provided. A EUV scanner is configured to perform a lithography exposure process in response to EUV radiation. A light source is configured to provide the EUV radiation to the EUV scanner. A measuring device is configured to measure concentration of debris caused by unstable target droplets in the chamber. A controller is configured to adjust a first gas flow rate and a second gas flow rate in response to the measured concentration of the debris and a control signal from the EUV scanner. A exhaust device is configured to extract the debris out of the chamber according to the first gas flow rate. A gas supply device is configured to provide a gas into the chamber according to the second gas flow rate. The control signal indicates the lithography exposure process is completed.

Methods and apparatus for determining a subset of a plurality of relationships between a plurality of parameters describing operation of a lithographic apparatus, the method comprising: determining a first set of data describing first relationships between a plurality of parameters of a reference apparatus; based on one or more measurements, determining a second set of data describing second relationships between the plurality of parameters of the reference or a further apparatus; comparing the first set of data and the second set of data; and selecting from the second set of data a subset of the second relationships based on differences between the first set of data and the second set of data.