The present disclosure relates a lithographic substrate marking tool. The tool includes a first electromagnetic radiation source disposed within a housing and configured to generate a first type of electromagnetic radiation. A radiation guide is configured to provide the first type of electromagnetic radiation to a photosensitive material over a substrate. A second electromagnetic radiation source is disposed within the housing and is configured to generate a second type of electromagnetic radiation that is provided to the photosensitive material.

A method for the tracking and identification of components of lithography systems, for example of projection exposure apparatuses for semiconductor lithography is provided. The components are each provided with at least one transponder. The transponder has a data memory, on which data relating to the respective component are stored. The transponder is configured to pick up wirelessly arriving signals of a reader and to respond with data from the data memory. The data are stored on the data memory during the production of the component and/or during the production of the lithography system and/or after the start-up of the lithography system.

A positioning method for particles on a reticle includes: data of positions passed by a target reticle within a preset period of time is determined according to path data of the target reticle that includes particle information of the target reticle at each scan moment; position information of the target reticle when particles are present on a surface of the target reticle is determined according to the data of positions, to obtain target position data of the target reticle; reticle position data of the target reticle within adjacent scan moments is determined according to the target position data, and a particle source position of the particles on the surface of the target reticle is determined from the reticle position data according to position priorities; and a particle position analysis report of the target reticle within the preset period of time is generated according to the particle source position.

A method of topography determination, the method including: obtaining a first focus value derived from a computational lithography model modeling patterning of an unpatterned substrate or derived from measurements of a patterned layer on an unpatterned substrate; obtaining a second focus value derived from measurement of a substrate having a topography; and determining a value of the topography from the first and second focus values.

A method for verifying semiconductor wafers includes receiving a semiconductor wafer including a plurality of layers. A first set of measurement data is obtained for at least one layer of the plurality of layers, where the first set of measurement data includes at least one previously recorded thickness measurement for one or more portions of the at least one layer. The first set of measurement data is compared to a second set of measurement data for the at least one layer. The second set of measurement data includes at least one new thickness measurement for the one or more portions of the at least one layer. The semiconductor wafer is determined to be an authentic wafer based on the second set of measurement data corresponding to the first set of measurement data, otherwise the semiconductor is determined to not be an authentic wafer.

A method of controlling a feedback system with a data matching module of an extreme ultraviolet (EUV) radiation source is disclosed. The method includes obtaining a slit integrated energy (SLIE) sensor data and diffractive optical elements (DOE) data. The method performs a data match, by the data matching module, of a time difference of the SLIE sensor data and the DOE data to identify a mismatched set of the SLIE sensor data and the DOE data. The method also determines whether the time difference of the SLIE sensor data and the DOE data of the mismatched set is within an acceptable range. Based on the determination, the method automatically validates a configurable data of the mismatched set such that the SLIE sensor data of the mismatched set is valid for a reflectivity calculation.

A tag coordinate determination method includes: generating a tag unit for placing a detection tag; setting the detection tag and the tag unit in an image of a photomask, and obtaining a tag position file of the image, the tag position file including position coordinates of the tag unit in the image; and acquiring position coordinates of a tag to be processed in the image according to the tag position file. The tag coordinate determination method can overcome to a certain extent the problem of manually capturing the coordinates being prone to errors, thereby improving accuracy of coordinate determination.

Provided are an exposure method and an exposure device. The method includes: extracting an exposure rule of a first layer pattern or a previous layer pattern of each wafer in the current wafer group; acquiring the serial number of at least one absent wafer in the current wafer group according to actual exposure information of the current layer pattern of each wafer in the current wafer group; removing the serial number of at least one absent wafer in the exposure rule of the current layer pattern, sequentially advancing the serial number of a wafer having the serial number posterior to the serial number of each of the at least one absent wafer in a sequence corresponding to the same bearing platform, and filling serial number vacancies to obtain the exposure rule of the current layer pattern; and exposing the current layer pattern of each wafer in the current wafer group.

A positioning method for particles on a reticle includes: data of positions passed by a target reticle within a preset period of time is determined according to path data of the target reticle that includes particle information of the target reticle at each scan moment; position information of the target reticle when particles are present on a surface of the target reticle is determined according to the data of positions, to obtain target position data of the target reticle; reticle position data of the target reticle within adjacent scan moments is determined according to the target position data, and a particle source position of the particles on the surface of the target reticle is determined from the reticle position data according to position priorities; and a particle position analysis report of the target reticle within the preset period of time is generated according to the particle source position.

A method for verifying semiconductor wafers includes receiving a semiconductor wafer including a plurality of layers. A first set of measurement data is obtained for at least one layer of the plurality of layers, where the first set of measurement data includes at least one previously recorded thickness measurement for one or more portions of the at least one layer. The first set of measurement data is compared to a second set of measurement data for the at least one layer. The second set of measurement data includes at least one new thickness measurement for the one or more portions of the at least one layer. The semiconductor wafer is determined to be an authentic wafer based on the second set of measurement data corresponding to the first set of measurement data, otherwise the semiconductor is determined to not be an authentic wafer.