Some implementations described herein provide a dual-feedback control system for laser beam targeting in a lithography system such as an EUV lithography system. In addition to using feedback from a high-frequency quad-cell sensor to adjust a target position of the pre-pulse laser beam based on a first portion of a phase of a wavefront of the pre-pulse laser beam, the dual-feedback control system uses feedback from a low-frequency camera sensor to adjust the target position of the pre-pulse laser beam based on a second portion of the phase of the wavefront.

A laser amplification device includes a laser oscillator that includes a first laser active medium including a mixed gas containing carbon dioxide gas and emits pulsed laser light with the full width at half maximum of between 15 ns to 200 ns, and a laser amplifier that includes a second laser active medium including a mixed gas containing carbon dioxide gas through which the pulsed laser light emitted from the laser oscillator passes to be shortened to pulsed laser light with the full width at half maximum of between 5 ns and 30 ns to be output.

Disclosed is a method of metrology. The method comprises illuminating a radiation onto a substrate; obtaining measurement data relating to at least one measurement of each of one or more structures on the substrate; using a Fourier-related transform to transform the measurement data into a transformed measurement data; and extracting a feature of the substrate from the transformed measurement data, or eliminating an impact of a nuisance parameter.

A method for manufacturing a semiconductor device includes: providing a semiconductor wafer, and acquiring surface flatness information of the semiconductor wafer; determining an exposure parameter of the semiconductor wafer according to the surface flatness information of the semiconductor wafer; and exposing the semiconductor wafer according to the exposure parameter.

A droplet accelerating assembly includes an acceleration chamber extending in a first direction parallel to an ejection direction of the droplet, the acceleration chamber having a first side connected to the droplet generator, a second side opposite the first side in the first direction, the second side including a discharge hole, and a fluid flow path, a pressure controller connected to the fluid flow path of the acceleration chamber, the pressure controller being configured to adjust an internal pressure of the acceleration chamber, an electrifier in the acceleration chamber, the electrifier being configured to electrify the droplet ejected by the droplet generator into an electrified droplet, and an accelerator in the acceleration chamber, the accelerator being configured to accelerate the electrified droplet.

The present invention quickly calculates values of optimal excitation parameters which are set in lenses in multiple stages. A multi charged particle beam adjustment method includes forming a multi charged particle beam, calculating, for each of lenses in two or more stages disposed corresponding to object lenses in two or more stages, a first rate of change and a second rate of change in response to change in at least an excitation parameter, the first rate of change being a rate of change in a demagnification level of a beam image of the multi charged particle beam, the second rate of change being a rate of change in a rotation level of the beam image, and calculating a first amount of correction to the excitation parameter of each of the lenses based on an amount of correction to the demagnification level and the rotation level of the beam image, the first rate of change, and the second rate of change.

An exposure apparatus according to an embodiment is configured to implement an exposure process for exposing a substrate to light. The exposure apparatus includes a stage, a storage device, and a controller. The stage is configured to hold the substrate. The storage device is configured to store a plurality of correction maps each having an alignment correction value that differs from each other. The controller is configured to control in the exposure process an exposure position relative to the substrate by selecting a correction map from the correction maps based on measurement results of a plurality of alignment marks arranged on the substrate or an amount of warpage of the substrate and moving the stage based on the selected correction map.

An apparatus for monitoring a stream of droplets of target material for generating a radiation beam in a radiation source, wherein the apparatus comprises: a target material emitter for creating the stream of droplets of target material, wherein the target material emitter comprises a chamber configured for the target material to pass through before forming the stream of droplets; a first transducer configured to generate acoustic pressures in the chamber, and a second transducer configured to sense the acoustic pressures in the chamber.

Apparatus for and method of aligning optical components such as mirrors to facilitate proper beam alignment using an image integration optical system is used to integrate images from multiple optical features such as from both left mirror bank and right mirror bank to present the images simultaneously to the camera system. A fluorescent material may be used to render a beam footprint visible and the relative positions of the footprint and an alignment feature may be used to align the optical feature.

An extreme ultra violet (EUV) light source apparatus includes a metal droplet generator, a collector mirror, an excitation laser inlet port for receiving an excitation laser, a first mirror configured to reflect the excitation laser that passes through a zone of excitation, and a second mirror configured to reflect the excitation laser reflected by the first mirror.