Provided is an inspection method for simply measuring an ultra-small foreign substance in a composition selected from the group consisting of an actinic ray-sensitive or radiation-sensitive composition and a thermosetting composition. In addition, provided are a method for producing a composition and a method for verifying a composition, using the inspection method. The inspection method is an inspection method for a composition selected from the group consisting of an actinic ray-sensitive or radiation-sensitive composition and a thermosetting composition, the inspection method including a step X1 for applying the composition to a substrate X to form a coating film, a step X2 for removing the coating film from the substrate X using a removal solvent including an organic solvent, and a step X3 for measuring the number of defects on the substrate X after the removal of the coating film using a defect inspection device. In a case where the composition is the actinic ray-sensitive or radiation-sensitive composition, the step X2 is applied in a state where the coating film has not been subjected to an exposure treatment by irradiation with actinic rays or radiation, and in a case where the composition is the thermosetting composition, the step X2 is applied in a state where the coating film has not been subjected to a thermosetting treatment.

Disclosed is a wavefront sensor for measuring a wavefront of a radiation. The wavefront sensor comprises a mask comprising a pattern located in path of the radiation to interact with the radiation. The radiation impinging on the mask forms a radiation detection pattern on a radiation detector subsequent to the mask, and the pattern of the mask is designed at least partly based on a requirement of the radiation detection pattern.

A method of determining an overlay reference wavelength, the method comprising: forming a pattern structure including a wafer and overlay keys on the wafer; obtaining first setup values of the pattern structure for first measurement wavelengths, respectively; selecting second measurement wavelengths among the first measurement wavelengths by filtering the first measurement wavelengths based on the first setup values; obtaining second setup values of the pattern structure for the second measurement wavelengths, respectively; and selecting a reference wavelength among the second measurement wavelengths based on the second setup values, wherein each of the first setup values is proportional to a deviation value of target sigma values of the overlay keys at a respective first measurement wavelength, and wherein each of the second setup values is inversely proportional to a deviation value of stack sensitivity values of the overlay keys at a respective second measurement wavelength.

Disclosed is a wavefront sensor for measuring a wavefront of a radiation. The wavefront sensor comprises a mask comprising a pattern located in path of the radiation to interact with the radiation. The radiation impinging on the mask forms a radiation detection pattern on a radiation detector subsequent to the mask, and the pattern of the mask is designed at least partly based on a requirement of the radiation detection pattern.

Various embodiments provide for inserting an etching shape in a circuit design based on one or more spacing rules, which can be part of electronic design automation (EDA). Some embodiments described herein address wire-end spacing violations for abutted cell placements by enabling one or more etching shapes to be inserted during block implementations, without needing to insert the etching shape at a top level of a circuit design. Additionally, some embodiments described herein address violations of one or more height rules by supporting variable trim height while ensuring that no new violation is introduced with a new etching shape.

An apparatus for checking a component with a periodic structure having substructures arranged on a lattice, the apparatus comprising a measurement radiation source for creating measurement radiation, an optics system, and a camera device. The apparatus further comprises a phase mask device for influencing a phase angle of the measurement radiation and/or an amplitude of the measurement radiation. The phase mask device comprises a dual lattice which is reciprocal to a target shape of the lattice.

A method of determining an overlay reference wavelength, the method comprising: forming a pattern structure including a wafer and overlay keys on the wafer; obtaining first setup values of the pattern structure for first measurement wavelengths, respectively; selecting second measurement wavelengths among the first measurement wavelengths by filtering the first measurement wavelengths based on the first setup values; obtaining second setup values of the pattern structure for the second measurement wavelengths, respectively; and selecting a reference wavelength among the second measurement wavelengths based on the second setup values, wherein each of the first setup values is proportional to a deviation value of target sigma values of the overlay keys at a respective first measurement wavelength, and wherein each of the second setup values is inversely proportional to a deviation value of stack sensitivity values of the overlay keys at a respective second measurement wavelength.