Apparatus and method for measuring one or more parameters of a substrate (300) using source radiation emitted from a radiation source (100) and directed onto the substrate. The apparatus comprises at least one reflecting element (710a) and at least one detector (720, 721). The at least one reflecting element is configured to receive a reflected radiation resulting from reflection of the source radiation from the substrate and further reflect the reflected radiation into a further reflected radiation. The at least one detector is configured for measurement of the further reflected radiation for determination of at least an alignment of the source radiation and/or the substrate

A system and method for generating an angular calibration factor (ACF) for a metrology tool useful in a fabrication process, the method including providing the metrology tool, the metrology tool including a stage and a housing, measuring a rotational orientation of the stage relative to the housing and generating the ACF for the stage based at least partially on the rotational orientation.

A metrology system comprises a radiation source, an optical element, first and second detectors, an integrated optical device comprising a multimode waveguide, and a processor. The radiation source generates radiation. The optical element directs radiation toward a target to generate scattered radiation from the target. The first detector receives a first portion of the scattered radiation and generates a first detection signal based on the received first portion. The multimode waveguide interferes a second portion of the scattered radiation using modes of the multimode waveguide. The second detector receives the interfered second portion and generates a second detection signal based on the received interfered second portion. The processor receives the first and second detection signals. The processor analyzes the received first portion, the received interfered second portion, and a propagation property of the multimode waveguide. The processor determines the property of the target based on the analysis.

An overlay measurement apparatus that can quickly measure an overlay error between layers with a large height difference is provided. The overlay measurement apparatus measures an error between a first overlay mark and a second overlay mark formed in a pair on different layers of a wafer. The overlay measurement apparatus includes an imaging system configured to acquire alignment images of a pair of first and second overlay marks at a plurality of focus positions, and a controller communicatively coupled to the imaging system. The overlay measurement apparatus can rapidly and accurately measure an overlay error between layers with a large height difference.

A lens system including: a first asphercal axicon lens element having a first refractive surface and a second refractive surface; a second aspherical axicon lens element having a third refractive surface similar to the second refractive surface and a fourth refractive surface similar to the first refractive surface, and an aperture stop located between the first asphercal axicon lens element and the second aspherical axicon lens element. The first aspherical axicon lens element and second aspherical axicon lens are mutually oriented such that the second refractive surface and third refractive surface are mutually facing. The first aspherical axicon lens element and the second aspherical axicon lens element are configured to minimize chromatic aberration for at least a spectral range of radiation relayed by the lens system.

Methods and systems for determining a mapped intensity metric are described. Determining the mapped intensity metric includes determining an intensity metric for a manufacturing system. The intensity metric is determined based on a reflectivity of a location on a substrate and a manufacturing system characteristic. Determining the mapped intensity metric also includes determining a mapped intensity metric for a reference system. The reference system has a reference system characteristic. The mapped intensity metric is determined based on the intensity metric, the manufacturing system characteristic, and the reference system characteristic, to mimic determination of the intensity metric for the manufacturing system using the reference system. In some embodiments, the reference system is virtual, and the manufacturing system is physical.

A calibration method of a detection system including an illumination system configured to illuminate a detection target, and an imaging system configured to form an image of light from the detection target on a photoelectric conversion element, the method including obtaining, for each of at least two combinations of first apertures in the illumination system and second apertures in the imaging system, each of which is formed by selecting one first aperture and one second aperture from the plurality of first apertures and the plurality of second apertures, a defocus characteristic indicating a shift amount of the image on the photoelectric conversion element with respect to a defocus amount of the detection target in a state in which each of the first aperture and the second aperture is positioned in a first position shifted from a reference position.

The preferred embodiments are directed to a metrology method used, for example, in recess analysis in semiconductor fabrication that includes using atomic force microscopy (AFM) data of a sample having an array of 2D-periodic features to generate a sample image, and calculating a periodicity of the features. The method identifies the peaks in the periodicity to determine a feature period and a lattice angle, and constructs a lattice mask that is registered to the image to perform an alignment calculation. The mask is offset, and alignment calculation made, to optimize cost.

An inspection system, a lithographic apparatus, and a method are provided. The inspection system includes an illumination system, an optical system, a shutter system, an objective system and a detector. The illumination system is configured to generate an illumination beam. The optical system is configured to split the illumination beam into a first sub-beam and a second sub-beam. The shutter system is configured to independently control a transmittance of the first sub-beam and the second subbeam. The objective system is configured to receive the first sub-beam and the second beam from the optical system and direct the first sub-beam and the second sub-beam towards a substrate having a target structure. The detector is configured to receive an image or a diffracted image of the target structure.

The invention provides a positioning system to determine an absolute position of a moveable target relative to a reference, comprising an interferometer system with a first light source to emit light at a fixed frequency and a second light source to emit light at at least two different frequencies. The positioning system is configured to determine, based on movement of the target, a phase difference curve associated with a first frequency of the second light source and a phase difference curve associated with a second frequency of the second light source as a function of a phase difference associated with the fixed frequency of the first light source and to determine a cross-point to determine the absolute position of the moveable target. The invention also relates to a lithographic apparatus and corresponding method.