A method of generating broadband output radiation and associated broadband radiation source. The method includes generating pulses of input radiation having a duration between 50fs and 400fs and having a rise time of less than 60fs; and exciting a working medium within a hollow core fiber with the pulses of input radiation.

An inspection system, a lithographic apparatus, and a method are provided. The inspection system includes an illumination system, an optical system, a shutter system, an objective system and a detector. The illumination system is configured to generate an illumination beam. The optical system is configured to split the illumination beam into a first sub-beam and a second sub-beam. The shutter system is configured to independently control a transmittance of the first sub-beam and the second subbeam. The objective system is configured to receive the first sub-beam and the second beam from the optical system and direct the first sub-beam and the second sub-beam towards a substrate having a target structure. The detector is configured to receive an image or a diffracted image of the target structure.

One or more optical images of a portion of a semiconductor wafer are obtained. The one or more optical images show a first structure in a first process layer and a second structure in a second process layer. The one or more optical images are provided to a machine-learning model trained to estimate an overlay offset between the first structure and the second structure. An estimated overlay offset between the first structure and the second structure is obtained from the machine-learning model.

An extreme ultraviolet light generation system includes a chamber including a first region; a target supply unit supplying a target to the first region; a laser device outputting pulse laser light; an optical system including an optical element to guide the pulse laser light to the first region; an irradiation position adjustment mechanism adjusting a laser irradiation position; an EUV light concentrating mirror arranged such that the pulse laser light passes outside the EUV light concentrating mirror and is guided to the first region; a plurality of EUV sensors measuring radiation energies of the EUV light radiated from the first region in mutually different radiation directions, and having a geometric centroid located at a position away from the optical axis in a direction toward the EUV light concentrating mirror; and a processor controlling the irradiation position adjustment mechanism as setting a target irradiation position of the pulse laser light.

Disclosed is an illumination source comprising a gas delivery system comprising a gas nozzle. The gas nozzle comprises an opening in an exit plane of the gas nozzle. The gas delivery system is configured to provide a gas flow from the opening for generating an emitted radiation at an interaction region. The illumination source is configured to receive a pump radiation having a propagation direction and to provide the pump radiation in the gas flow. A geometry shape of the gas nozzle is adapted to shape a profile of the gas flow such that gas density of the gas flow first increases to a maximum value and subsequently falls sharply in a cut-off region along the propagation direction.

Provided are an analysis method of a photosensitive composition, with which a trace amount of metal atoms contained in the photosensitive composition can be easily detected, a production method of a photosensitive composition, and a manufacturing method of an electronic device. The analysis method of a photosensitive composition includes a step 1 of applying a photosensitive composition onto a substrate to form a coating film, a step 2 of removing the coating film from the substrate without exposing the coating film to obtain a coating film-removed substrate, and a step 3 of measuring the number of metal atoms per unit area on the coating film-removed substrate by a total reflection X-ray fluorescence analysis method to obtain a measured value.

A metrology system includes a radiation source (708), a phased array (722a,b;724a,b;726;734), a detector, and a comparator. The phased array includes optical elements (706), waveguides (704), and phase modulators (702). The phased array generates a beam of radiation and directs the beam toward a surface of an object. The optical elements radiate radiation waves. The waveguides guide radiation from the radiation source to the optical elements. The phase modulators adjust phases of the radiation waves such that the radiation waves combine to form the beam. The detector receives radiation scattered from the surface and generates a detection signal based on the received radiation. The comparator analyzes the detection signal and determines a location of a defect on the surface based on the analyzing.

A method of correcting a metrology image for an out-of-band leakage signal contribution resultant from leakage of measurement radiation at suppressed wavelengths. The method includes: obtaining at least one correction image, the correction image obtained using measurement radiation with all wavelengths or wavelength bands maximally suppressed by a radiation modulation device; obtaining a metrology image using measurement radiation including modulated broadband radiation, modulated by the radiation modulation device to obtain a configured spectrum; and using the at least one correction image to correct the metrology image.

A method of determining an overlay measurement of a substrate includes: injecting charge into a charge injection element of the substrate; determining a first capacitance of a first pair of elements and a second capacitance of a second pair of elements; and determining a capacitance ratio based on the first capacitance and the second capacitance. The overlay measurement may be determined based on the capacitance ratio, which may indicate an imbalance.

Disclosed is metrology apparatus for measurement of a diffractive structure on a substrate. comprising: a radiation source operable to provide first radiation for excitation of the diffractive structure, said first radiation having a first wavelength; a detection arrangement operable to detect at least diffracted second radiation comprising a second harmonic of said first radiation, said diffracted second radiation being generated from said diffractive structure and/or substrate and diffracted by said diffractive structure; and a processing arrangement operable to determine a parameter of interest relating to said diffractive structure from at least said diffracted second radiation.