Provided is an intelligent correction device control system for a super-resolution lithography precision mask, including: a sixteen-way pneumatic fine-tuning mask deformation control subsystem configured to deform a mask, detect a force value of a mask deformation, compare the force value of the mask deformation with an output force set value, and generate a first control feedback quantity to adjust a force deforming the mask, so as to control a deformation quantity of the mask; and an alignment subsystem configured to acquire images of the mask and a substrate, and adjust a position between the mask and the substrate according to the images, so as to align the mask with the substrate.

A suction clamp for clamping an object. The suction clamp includes a base structure including a base and a connection area, and a first pad for receiving the object. The suction clamp further includes a resilient member connecting the first pad to the connection area of the base structure such that the first pad is moveable relative to the base between a receiving position for receiving the object and a clamping position for clamping the object, wherein the resilient member is adapted to bias the first pad to the receiving position. The suction clamp further includes a suction opening arranged in the base and adapted to be connected to a suction device for providing a suction force for clamping the object on the first pad.

A substrate with a backside surface configured to provide a friction switch when the substrate is loaded onto a substrate holder in a substrate-loading cycle, wherein the substrate backside surface has a molecular assembly including at least one high-interaction region and at least one low-interaction region. Further, there is provided methods using such a substrate and methods for creating such a substrate.

Aspects of the present disclosure provide a method for improving overlay alignment of patterning by correcting wafer shape. For example, the method can include receiving a wafer having a working surface with at least partially-fabricated semiconductor devices, and a backside surface opposite to the working surface. The method can also include forming a first stressor film on the backside surface. The first stressor film can modify overlay alignment of the working surface in a first direction across the working surface of the wafer. The method can also include forming one or more first semiconductor structures on the working surface of the wafer. The first semiconductor structures are aligned in the first direction.

In an embodiment, an apparatus includes an energy source, a support platform for holding a wafer, an optical path extending from the energy source to the support platform, and a photomask aligned such that a patterned major surface of the photomask is parallel to the force of gravity, where the optical path passes through the photomask, where the patterned major surface of the photomask is perpendicular to a topmost surface of the support platform.

The invention provides a substrate support arranged to support a substrate, comprising piezo a actuator, further comprising a first pair of electrodes, a second pair of electrodes and a piezo material having a first surface and a second surface. The first surface is arranged along a first direction and second direction. The first pair of electrodes comprises a first electrode arranged on the first surface and a second electrode arranged on the second surface. The second pair of electrodes is arranged to shear the piezo material. The first pair of electrodes is arranged to elongate the piezo material in a third direction perpendicular to the first direction and second direction. The first electrode is divided into at least two parts and is arranged to rotate the first surface and the second surface relatively to each other about the first direction wherein the piezo actuator is arranged to support the substrate.

A stage apparatus for holding a substrate, including a substrate holding unit including a holding surface that holds the substrate, a driving mechanism configured to transfer the substrate to the holding surface, and a control unit configured to decide, based on warpage information concerning warpage of the substrate measured while the substrate is supported by a supporting surface smaller than the holding surface, a driving profile of the substrate by the driving mechanism in a height direction of the substrate such that the substrate is transferred to the holding surface while the warping of the substrate is corrected.

The invention relates to a lithography system, for example for projecting an image or an image pattern on to a target (1) such as a wafer, said target being included in said system by means of a target table (2), clamping means being present for clamping said target on said table. Said clamping means comprises a layer of stationary liquid (3), included at such thickness between target and target table that, provided the material of the liquid (C) and of the respective contacting faces (A, B) of the target (1) and target table (2), a pressure drop (P.sub.Cap) arises.

Methods of forming structures including a stress management layer for photolithography and structures including the stress management layer are disclosed. Further disclosed are systems for depositing a stress management layer. Exemplary methods include forming the stress management layer using one or more of plasma-enhanced cyclic (e.g., atomic layer) deposition and plasma-enhanced chemical vapor deposition.

A lithographic apparatus with a cover plate formed separately from a substrate table and means for stabilizing a temperature of the substrate table by controlling the temperature of the cover plate is disclosed. A lithographic apparatus with thermal insulation provided between a cover plate and a substrate table so that the cover plate acts as a thermal shield for the substrate table is disclosed. A lithographic apparatus comprising means to determine a substrate table distortion and improve position control of a substrate by reference to the substrate table distortion is disclosed.