Some implementations described herein include operating components in a lithography system at variable speeds to reduce, minimize, and/or prevent particle generation due to rubbing of or collision between contact parts of the components. In some implementations, a component in a path of transfer of a semiconductor substrate in the lithography system is operated at a relatively high movement speed through a first portion of an actuation operation, and is operated at a reduced movement speed (e.g., a movement speed that is less than the high movement speed) through a second portion of the actuation operation in which contact parts of the component are to interact. The reduced movement speed reduces the likelihood of particle generation and/or release from the contact parts when the contact parts interact, while the high movement speed provides a high semiconductor substrate throughput in the lithography system.

A flammable gas diluter includes a dilution vessel having an outer envelope defining a longitudinal flow passage from an inlet to an outlet; at least one air inlet assembly for directing a flow of air into the inlet of the dilution vessel; a flammable gas inlet arrangement located towards an inlet end of the dilution vessel; two gas flow generators configured to pump a flow of air into the air inlet assembly, the two gas flow generators being located upstream of the flammable gas inlet arrangement; and two dampers, each of the dampers being mounted between a corresponding gas flow generator and the dilution vessel. Control circuitry is configured to open a damper during an operational mode of the corresponding gas flow generator and to close the damper when the corresponding gas flow generator is stopped in standby mode.

A vessel (16) for an EUV radiation source, the vessel comprising a first opening (30) for accessing an interior (32) of the vessel, a first access member (34) configured to allow or prevent access to the interior of the vessel through the first opening, a second opening (36) for accessing the interior of the vessel, the second opening being arranged in the first access member and a second access member (38) arranged on the first access member and configured to allow or prevent access to the interior of the vessel through the second opening.

An extreme ultraviolet light (EUV) source apparatus includes a light source part for generating a plasma that emits EUV light; a first vacuum housing in which the light source part is located; a second vacuum housing arranged between the first vacuum housing and a utilizing apparatus in which the EUV light is utilized; and a debris trap located inside the second vacuum housing for deflecting debris particles emitted from the plasma, whereby the debris particles do not ingress into the utilizing apparatus. Between the first and second vacuum housings, there is provided a window through which the EUV light emitted from the light source part passes from the first vacuum housing to the second vacuum housing. A wall of the second vacuum housing has a through-hole and a window that is configured to allow the EUV light to pass from the second vacuum housing to the utilizing apparatus.

The present invention provides a substrate treating apparatus. The substrate treating apparatus includes: a first process chamber having a first treatment space therein; a second process chamber having a second treatment space therein; and an exhaust unit exhausting atmospheres of the first treatment space and the second treatment space, in which the exhaust unit includes: an integrated exhaust line; a first exhaust line connecting the first process chamber and the integrated exhaust line; a second exhaust line connecting the second process chamber and the integrated exhaust line; and a partition wall partitioning a partial section of a flow path within the integrated exhaust line into a first flow path through which a fluid exhausted through the first exhaust line flows and a second flow path through which a fluid discharged through the second exhaust line flows.

A coupling arrangement including a first fitting, a second fitting, and a rotational coupler which when turned presses the first fitting against the second fitting, in which the fittings engage rotationally to inhibit relative rotation of the fittings. For example, one of the fittings may have protrusions and the other fitting may have recesses arranged to receive the protrusions.

A first x-y translation stage, a second x-y translation stage, and a chuck are disposed in a chamber. The chuck is situated above and coupled to the second x-y translation stage, which is situated above and coupled to the first x-y translation stage. The chuck is configured to support a substrate and to be translated by the first and second x-y stages in x- and y-directions, which are substantially parallel to a surface of the chuck on which the substrate is to be mounted. A first barrier and a second barrier are also disposed in the chamber. The first barrier is coupled to the first x-y translation stage to separate a first zone of the chamber from a second zone of the chamber. The second barrier is coupled to the second x-y translation stage to separate the first zone of the chamber from a third zone of the chamber.

An EUV stocker and an EUV pod device is disclosed. The EUV stocker includes an AI driven dynamic control circuitry, an AI controlled safety interlock, and an independent air return control device. The EUV stocker includes a Mass Flow Control (MFC) that operates in conjunction with one or more valves. The EUV stocker further includes a hydrocarbon detecting assembly, oxygen detecting assembly, pressure detecting assembly, and temperature detecting assembly and more to maintain the required condition within the EUV stocker. The EUV stocker also includes automated transportation devices such as AMHS, OHT, MR, AGV, RGV, or the like to provide a safe EUV mask storage environment for operators.

Embodiments of baking chambers for baking a photomask are provided herein. In some embodiments, a baking chamber includes: a chamber body enclosing a first interior volume and a second interior volume, disposed beneath and fluidly independent from the first interior volume; a radiant heat source disposed in the first interior volume; a photomask support structure configured to support a photomask disposed in the second interior volume; a window disposed between the first interior volume the second interior volume, wherein the window is made of a material that is transparent to thermal radiation; a first gas inlet and a first gas outlet coupled to the first interior volume; and a second gas inlet and a second gas outlet coupled to the second interior volume on opposite ends thereof to facilitate flow of a process gas laterally through the second interior volume and across the photomask support structure.

Embodiments of baking chambers for baking a substrate and methods of use thereof are provided herein. In some embodiments, a multi-chamber process tool for processing a substrate including: a wet clean chamber for cleaning the substrate; and a baking chamber configured to heat the substrate to remove residue or haze left over after a wet clean process performed in the wet clean chamber, the baking chamber comprising: a chamber body enclosing an interior volume; a heater disposed in the interior volume, wherein the heater is configured to have a surface temperature of about 100 to about 400 degrees Celsius during use; a substrate support configured to support a substrate disposed in the interior volume, wherein the substrate support has a direct line of sight with the heater such that the heater heats the substrate support via convection; and a gas inlet and a gas outlet coupled to the interior volume.