Patent classifications
G03F7/7085
COATER PHOTORESIST ARM SMART CENTERING JIG
An alignment nozzle jig for centering a coater photoresist arm that includes an alignment nozzle block. The alignment nozzle jig also includes an endoscope holder removably secured to a bottom of the alignment nozzle block, an endoscope, and an alignment mark removably coupled to the endoscope holder opposite the alignment nozzle block. The alignment nozzle jig is retrieved from a nozzle bath by the coater arm and transferred to a center of a chuck in an associated process chamber. Via the endoscope, the coater photoresist arm is aligned with the center of the chuck using the alignment mark.
SEMICONDUCTOR PROCESSING TOOL AND METHODS OF OPERATION
Some implementations described herein provide a dual-feedback control system for laser beam targeting in a lithography system such as an EUV lithography system. In addition to using feedback from a high-frequency quad-cell sensor to adjust a target position of the pre-pulse laser beam based on a first portion of a phase of a wavefront of the pre-pulse laser beam, the dual-feedback control system uses feedback from a low-frequency camera sensor to adjust the target position of the pre-pulse laser beam based on a second portion of the phase of the wavefront.
HIGH THROUGHPUT AND HIGH POSITION ACCURATE METHOD FOR PARTICLE INSPECTION OF MASK PODS
In a method of inspecting an outer surface of a mask pod, a stream of air is directed at a first location of a plurality of locations on the outer surface. One or more particles are removed by the directed stream of air from the first location on the outer surface. Scattered air from the first location of the outer surface is extracted and a number of particles in the extracted scattered air is determined as a sampled number of particles at the first location. The mask pod is moved and the stream of air is directed at other locations of the plurality of locations to determine the sampled number of particles in extracted scattered air at the other locations. A map of the particles on the outer surface of the mask pod is generated based on the sampled number of particles at the plurality of locations.
Method and apparatus for improving critical dimension variation
A method is described. The method includes obtaining a relationship between a thickness of a contamination layer formed on a mask and an amount of compensation energy to remove the contamination layer, obtaining a first thickness of a first contamination layer formed on the mask from a thickness measuring device, and applying first compensation energy calculated from the relationship to a light directed to the mask.
Stage apparatus and method for calibrating an object loading process
The invention provides a stage apparatus, comprising an object support comprising a ring shaped protrusion having an outer radius in a first plane, and configured to support an object with a radius in the first plane larger than the outer radius of the ring shaped protrusion. The stage apparatus further comprises a sensor module configured to detect the object support, and the object when it is arranged on the object support. The stage apparatus further comprises a processing unit configured to receive one or more signals from the sensor module, and to determine, based on said one or more signals, a position of the object relative to the ring shaped protrusion when the object is arranged on the object support. The processing unit is further configured to determine, based on said position of the object, an offset value representing the position of the object relative to the ring shaped protrusion.
Method for detecting particles on the surface of an object, wafer, and mask blank
A method for detecting deposited particles (P) on a surface (11) of an object (3, 14) includes: irradiating a partial region of the surface (11) of the object (3, 14) with measurement radiation; detecting measurement radiation scattered on the irradiated partial region, and detecting particles in the partial region of the surface of the object (3, 14) based on the detected measurement radiation. In the steps of irradiating and detecting, the surface (11) of the object (3, 14) has an anti-reflective coating (13) and/or a surface structure (15) for reducing the reflectivity of the surface (11) for the measurement radiation (9), wherein the particle detection limit is lowered due to the anti-reflective coating (13) and/or the surface structure (15). Also disclosed are a wafer (3) and a mask blank for carrying out the method.
COLLECTOR FLOW RING
Systems, apparatuses, and methods are provided for a collector flow ring (CFR) housing configured to mitigate an accumulation of fuel debris in an extreme ultraviolet (EUV) radiation system. An example CFR housing can include a plurality of showerhead flow channel outlets configured to output a plurality of first gaseous fluid flows over a plurality of portions of a plasma-facing surface of the CFR housing. The example CFR housing can further include a gutter purge flow channel outlet configured to output a second gaseous fluid flow over a fuel debris-receiving surface of the CFR housing. The example CFR housing can further include a shroud mounting structure configured to support a shroud assembly, a cooling flow channel configured to transport a fluid, and a plurality of optical metrology ports configured to receive a plurality of optical metrology tubes.
OVERLAY MEASUREMENT SYSTEM USING LOCK-IN AMPLIFIER TECHNIQUE
A detection system (200) includes an illumination system (210), a first optical system (232), a phase modulator (220), a lock-in detector (255), and a function generator (230). The illumination system is configured to transmit an illumination beam (218) along an illumination path. The first optical system is configured to transmit the illumination beam toward a diffraction target (204) on a substrate (202). The first optical system is further configured to transmit a signal beam including diffraction order sub-beams (222, 224, 226) that are diffracted by the diffraction target. The phase modulator is configured to modulate the illumination beam or the signal beam based on a reference signal. The lock-in detector is configured to collect the signal beam and to measure a characteristic of the diffraction target based on the signal beam and the reference signal. The function generator is configured to generate the reference signal for the phase modulator and the lock-in detector.
PROJECTION EXPOSURE APPARATUS FOR SEMICONDUCTOR LITHOGRAPHY
A projection exposure apparatus for semiconductor lithography comprises an optical element and a temperature recording device for detecting a temperature on a surface of the optical element via electromagnetic radiation emanating from the surface of the optical element. The temperature recording device can comprise a filter for filtering the electromagnetic radiation.
Object in a lithographic apparatus
An object, such as a sensor for an immersion lithographic apparatus, has an outer layer which comes in contact with immersion liquid and wherein the outer layer has a composition including a rare earth element. There is also provided an immersion lithographic apparatus having such an object and a method for manufacturing such an object.