Devices, systems, and methods (a) receive a predetermined fluid drop volume and an array of cells, wherein each cell in the array is associated with a respective predetermined fluid volume; (b) scan the array of cells according to a scanning sequence for a next unassigned cell and add the next unassigned cell to a respective fill set; (c) add unassigned cells neighboring the next unassigned cell to the respective fill set until an aggregate of the respective predetermined fluid volumes of the cells in the respective fill set equals or exceeds the predetermined fluid drop volume; (d) place a fluid drop in the drop pattern within an area associated with the respective fill set and mark all cells in the respective fill set as assigned; and (e) repeat (b)-(d) until all cells in the array of cells have been assigned and the drop pattern has been generated.

A clamping device, a storage system and an operating method for an EUV reticle stocker are provided. The required space for storing EUV reticles is significantly reduced while ensuring a high quality storage environment for the stored EUV reticles. A stocker for storing EUV reticles is also provided.

An exposure method includes reading data representing a relationship between a first parameter relating to an energy ratio between energy of first pulsed laser light having a first wavelength and energy of second pulsed laser light having a second wavelength longer than the first wavelength and a second parameter relating to a sidewall angle of a resist film that is the angle of a sidewall produced when the resist film is exposed to the first pulsed laser light and the second pulsed laser light, and determining a target value of the first parameter based on the data and a target value of the second parameter; and exposing the resist film to the first pulsed laser light and the second pulsed laser light by controlling a narrowed-line gas laser apparatus to output the first pulsed laser light and the second pulsed laser light based on the target value of the first parameter.

A lithography system includes an extreme ultraviolet (EUV) light source, a reticle stage, a reflection layer, and a plurality of light permeable protrusions. The EUV light source is configured for generating an EUV light beam. The reticle stage is configured for holding a reticle with a front surface of the reticle facing in a downward direction. The reflection layer is below the reticle stage. The light permeable protrusions are formed on the reflection layer. Each of the light permeable protrusions includes a bouncing surface facing in a direction that forms an acute angle with the downward direction. A first portion of the EUV light beam from the EUV light source passes through the bouncing surface of each of the light permeable protrusions to the reflection layer and is reflected to the reticle by the reflection layer.

The present invention provides an exposure apparatus that exposes a substrate, comprising: an optical system configured to emit, in a first direction, light for exposing the substrate; a first supplier configured to supply a gas into a chamber where the optical system is arranged; and a second supplier configured to supply a gas to an optical path space where the light from the optical system passes through, wherein the second supplier includes a gas blower including a blowing port from which a gas is blown out in a second direction, and the guide member configured to guide the gas blown out from the blowing port to the optical path space, and the guide member includes a plate member extended on a side of the first direction of the blowing port so as to be arranged along the second direction.

A difficulty of contamination interfering with a grid plate positional measurement system is addressed. In one embodiment contamination is prevented from coming into contact with the grating or the sensor. In an embodiment, surface acoustic waves are used to detach contamination from a surface of the grating or sensor.

An apparatus includes a vacuum chamber, a reflective optical element arranged in the vacuum chamber and configured to reflect an extreme ultra-violet (EUV) light, and a cleaning module positioned in the vacuum chamber. the cleaning module is operable to provide a mitigation gas flowing towards the reflective optical element and provide a hydrogen-containing gas flowing towards the reflective optical element. The mitigation gas mitigates, by chemical reaction, contamination of the reflective optical element.

An EUV stocker and an EUV pod device is disclosed. The EUV stocker includes an AI driven dynamic control circuitry, an AI controlled safety interlock, and an independent air return control device. The EUV stocker includes a Mass Flow Control (MFC) that operates in conjunction with one or more valves. The EUV stocker further includes a hydrocarbon detecting assembly, oxygen detecting assembly, pressure detecting assembly, and temperature detecting assembly and more to maintain the required condition within the EUV stocker. The EUV stocker also includes automated transportation devices such as AMHS, OHT, MR, AGV, RGV, or the like to provide a safe EUV mask storage environment for operators.

Supersonic gas jets are provided near the immediate focus of a lithography apparatus in order to deflect tin debris generated by the lithography process away from a scanner side and towards a debris collection device. The gas jets can be positioned in a variety of useful orientations, with adjustable gas flow velocity and gas density in order to prevent up to nearly 100% of the tin debris from migrating to the reticle on the scanner side.

A lithographic apparatus injects gas between a patterning device and a patterning device masking blade to help protect the patterning device from contamination. The gas may be injected into the space defined between the patterning device and the patterning device blade by one or more gas supply nozzles that are arranged on at least one side of the patterning device. The one or more gas supply nozzles are coupled to a frame which a patterning device support structure moves relative to. Each nozzle may be constructed and arranged to supply gas over at least the patterning region of the reflective patterning device.