An extreme ultraviolet light generator includes a collector including a first focus and a second focus, a droplet feeder configured to provide a source droplet toward the first focus of the collector, a laser generator configured to irradiate a laser toward the first focus of the collector, an airflow controller between the first focus and the second focus of the collector, the airflow controller having a ring shape, and the airflow controller including at least one slit, and a first part and a second part hinged to each other, and a control gas feeder configured to provide a control gas towards the at least one slit of the airflow controller.

Some implementations described herein include operating components in a lithography system at variable speeds to reduce, minimize, and/or prevent particle generation due to rubbing of or collision between contact parts of the components. In some implementations, a component in a path of transfer of a semiconductor substrate in the lithography system is operated at a relatively high movement speed through a first portion of an actuation operation, and is operated at a reduced movement speed (e.g., a movement speed that is less than the high movement speed) through a second portion of the actuation operation in which contact parts of the component are to interact. The reduced movement speed reduces the likelihood of particle generation and/or release from the contact parts when the contact parts interact, while the high movement speed provides a high semiconductor substrate throughput in the lithography system.

A storage and drainage mechanism includes a storage vessel, a drainage section, and a temperature controller. The storage vessel stores a stored material containing metal of plasma raw material at a temperature at which the stored material is in a liquid-phase state. The drainage section includes a drain pipe including an inlet through which the stored material flows in, and an outlet through which the stored material drains away, the drain pipe being communicated with an interior of the storage vessel, and a temperature control element that adjusts a temperature of the drain pipe. The temperature controller controls the temperature control element to switch the temperature of the drain pipe in a manner that the stored material in the drain pipe is in either a liquid-phase state or a solid-phase state.

A method for operating an EUV lithography apparatus (1) with at least one vacuum housing (27) for at least one reflective optical element (12) includes operating the EUV lithography apparatus in an exposure operating mode (B), in which EUV radiation (5) is radiated into the vacuum housing, wherein a reducing plasma is generated at a surface (12a) of the reflective optical element in response to an interaction of the EUV radiation with a residual gas present in the vacuum housing. After an exposure pause, in which no EUV radiation is radiated into the vacuum housing, and before renewed operation of the EUV lithography apparatus in the exposure operating mode (B), the EUV lithography apparatus is operated in a recovery operating mode, in which oxidized contaminants at the surface of the reflective optical element are reduced in order to recover a transmission of the EUV lithography apparatus before the exposure pause.

According to example embodiments, there is provided a photoresist inspection method. The photoresist inspection method includes: providing a photoresist on a substrate; irradiating the photoresist with an electron beam and an excitation beam; detecting fluorescent light generated by the photoresist in response to the excitation beam; and evaluating the photoresist based on the fluorescent light.

Systems, apparatuses, and methods are provided for a collector flow ring (CFR) housing configured to mitigate an accumulation of fuel debris in an extreme ultraviolet (EUV) radiation system. An example CFR housing can include a plurality of showerhead flow channel outlets configured to output a plurality of first gaseous fluid flows over a plurality of portions of a plasma-facing surface of the CFR housing. The example CFR housing can further include a gutter purge flow channel outlet configured to output a second gaseous fluid flow over a fuel debris-receiving surface of the CFR housing. The example CFR housing can further include a shroud mounting structure configured to support a shroud assembly, a cooling flow channel configured to transport a fluid, and a plurality of optical metrology ports configured to receive a plurality of optical metrology tubes.

A light source apparatus includes a chamber and a metal fluoride trap coupled to the chamber and configured to provide clean gas to a set of window housing apparatuses coupled to the chamber. Each window housing apparatus is configured to reduce metal fluoride dusting on an optical window and includes a window housing supporting an optical window, an aperture apparatus coupled to the window housing, and an insert disposed between the aperture apparatus and the optical window. The aperture apparatus includes a plurality of cells configured to trap metal fluoride dust flowing upstream from the chamber through the aperture apparatus toward the optical window. The insert is configured to control a first flow rate of the clean gas along the optical window and a second flow

An apparatus comprising: a position monitoring system configured to determine the position of the substrate with respect to a projection system configured to project a radiation beam through an opening in the projection system and onto a substrate, wherein a component of the position monitoring system is located beneath the projection system in use; and a baffle disposed between the opening and the component.

An EUV photolithography system utilizes a baseplate of an EUV pod to unload an EUV reticle from a chuck within an EUV scanner. The baseplate includes a top surface and support pins extending from the top surface. The when the reticle is unloaded onto the baseplate, the support pins hold the reticle at relatively large distance from the top surface of the baseplate. The support pins have a relatively low resistance. The large distance and low resistance help ensure that particles do not travel from the baseplate to the reticle during unloading.

A method for manufacturing a membrane assembly for EUV lithography, the method including: providing a stack having a planar substrate and at least one membrane layer, wherein the planar substrate includes an inner region and a border region around the inner region; and selectively removing the inner region of the planar substrate. The membrane assembly includes: a membrane formed from the at least one membrane layer; and a border holding the membrane, the border formed from the border region of the planar substrate. The stack is provided with a mechanical protection material configured to mechanically protect the border region during the selectively removing the inner region of the planar substrate.