A pellicle membrane for a lithographic apparatus, the membrane including a matrix including a plurality of inclusions distributed therein. A method of manufacturing the pellicle membrane, a lithographic apparatus including the pellicle membrane, a pellicle assembly for use in a lithographic apparatus including the membrane, as well as the use of the pellicle membrane in a lithographic apparatus or method.

The present invention provides: a pellicle frame for EUV exposure characterized in that the pellicle frame is provided with at least one ventilation part, and a filter having a porous membrane coated with a resin is attached inside the ventilation part; a pellicle characterized in that a pellicle film is stretched on the pellicle frame; a pellicle-attached exposure original plate for EUV exposure characterized in that the pellicle is attached to the exposure original plate; a method for manufacturing a semiconductor; a method for manufacturing a liquid crystal display plate; and an exposure method. The pellicle frame of the present invention is sufficiently resistant to hydrogen radicals during EUV exposure.

An apparatus for removing a pellicle frame from a photomask includes a heater configured to soften an adhesive between the pellicle frame and the photomask; a shower head including a plate, a central region of the plate is configured to overlap with a pattern area of the photomask, and a periphery region of the plate is configured to provide a flow from the periphery region of the plate toward the pellicle frame and the adhesive; and a gripper configured to secure the pellicle frame against the flow and remove the adhesive and the pellicle frame from the photomask. A method of removing a pellicle frame, includes providing a plate overlapped with a pattern area of the photomask; providing a flow from the plate toward the pellicle frame and an adhesive; securing the pellicle frame; soften the adhesive; and leveraging the pellicle frame to remove the adhesive and the pellicle frame.

A cleaning machine and a cleaning method for a photomask pellicle are provided. The cleaning machine at least includes: an air knife and a cleaning device. The air knife is configured to blow away contamination particles on the surface of the photomask pellicle. The cleaning device is configured to spray cleaning liquid to the surface of the photomask pellicle, to weather the contamination particles failed to be blown away by the air knife through the volatilization of the cleaning liquid. The air knife is also configured to blow away the weathered contamination particles.

A method of testing a photomask assembly includes placing the photomask assembly into a chamber, wherein the photomask assembly includes a pellicle attached to a first side of a photomask. The method further includes exposing the photomask assembly to a radiation source having a wavelength ranging from about 160 nm to 180 nm in the chamber to accelerate haze development, wherein the exposing of the photomask assembly includes illuminating an entirety of an area of the photomask covered by the pellicle throughout an entire illumination time and illuminating a frame adhesive attaching the pellicle to the photomask. The method further includes detecting haze of the photomask following exposing the photomask assembly to the radiation source. The method further includes predicting performance of the photomask assembly during a manufacturing process based on the detected haze of the photomask following exposing the photomask assembly to the radiation source.

Provided are a pellicle frame, a pellicle, an exposure original plate with a pellicle, an exposure method, a method for manufacturing a semiconductor, and a method for manufacturing a liquid crystal display board, the pellicle frame having an upper end surface on which a pellicle film is provided.

A method for manufacturing a membrane assembly for EUV lithography, the method including: providing a stack having a planar substrate and at least one membrane layer, wherein the planar substrate includes an inner region and a border region around the inner region; and selectively removing the inner region of the planar substrate. The membrane assembly includes: a membrane formed from the at least one membrane layer; and a border holding the membrane, the border formed from the border region of the planar substrate. The stack is provided with a mechanical protection material configured to mechanically protect the border region during the selectively removing the inner region of the planar substrate.

Provided are: a frame-shaped pellicle frame 1 having a pellicle frame main body 1a and an insulation layer 1b covering the pellicle frame main body; a pellicle comprising a pellicle film that is provided on the pellicle frame 1 and a top end surface 13 of the pellicle frame with an adhesive or pressure-sensitive adhesive therebetween; a pellicle-equipped exposure original plate; an exposure method; a method for manufacturing a semiconductor; and a method for manufacturing a liquid crystal display board. The pellicle frame can reduce falling of a foreign matter adhered to the surface thereof.

An extreme ultraviolet light (EUV) source apparatus includes a light source part for generating a plasma that emits EUV light; a first vacuum housing in which the light source part is located; a second vacuum housing arranged between the first vacuum housing and a utilizing apparatus in which the EUV light is utilized; and a debris trap located inside the second vacuum housing for deflecting debris particles emitted from the plasma, whereby the debris particles do not ingress into the utilizing apparatus. Between the first and second vacuum housings, there is provided a window through which the EUV light emitted from the light source part passes from the first vacuum housing to the second vacuum housing. A wall of the second vacuum housing has a through-hole and a window that is configured to allow the EUV light to pass from the second vacuum housing to the utilizing apparatus.

A method for in situ protection of a surface (7a) of an aluminum layer (7) of a VUV radiation reflecting coating (6) of an optical element (4), arranged in an interior of an optical arrangement, against the growth of an aluminum oxide layer (8), including carrying out an atomic layer etching process for layer-by-layer removal of the aluminum oxide layer from the surface. The etching process includes a surface modification step and a material detachment step. At least one boron halide is supplied as a surface modifying reactant to the interior in pulsed fashion during the surface modification step. A plasma is generated at a surface (8a) of the aluminum oxide layer, at least during the material detachment step. The atomic layer etching process is performed until the aluminum oxide layer reaches a given thickness (D), or the aluminum oxide layer is kept below that thickness (D) by the process.