The present disclosure relates a lithographic substrate marking tool. The tool includes a first electromagnetic radiation source disposed within a housing and configured to generate a first type of electromagnetic radiation. A radiation guide is configured to provide the first type of electromagnetic radiation to a photosensitive material over a substrate. A second electromagnetic radiation source is disposed within the housing and is configured to generate a second type of electromagnetic radiation that is provided to the photosensitive material.

Embodiments of the present disclosure provide a device for adjusting a wafer, a reaction chamber, and a method for adjusting a wafer. The device for adjusting a wafer includes: a lifting module, the lifting module including a first carrier surface configured to carry a wafer, and the first carrier surface ascending to a preset highest position or descending to a preset lowest position relative to a reference surface; a carrier module, the carrier module including a second carrier surface, a position of the second carrier surface being higher than the preset lowest position and being lower than the preset highest position, and the second carrier surface being configured to receive and carry the wafer carried on the first carrier surface; and a suction module, the suction module including a first suction opening facing the wafer and surrounded by the second carrier surface.

The present disclosure relates to a wafer processing apparatus and a wafer transfer method. The wafer processing apparatus includes: a first machine; a second machine, including a manipulator, the manipulator transfers a wafer to the machine through a connection port; the connection port is provided between the first machine and the second machine; door panels, provided on the first machine and used to close the connection port; a detector, for detecting a current position of the door panel; a driver, connected to the door panel, for driving the door panel to move to open or close the connection port; and a controller, connected to the detector, the driver and the manipulator, for controlling the door panel to move according to the current position of the door panel to open or close the connection port, and control the manipulator to transfer the wafer.

An immersion lithographic apparatus is provided having a substrate table including a drain configured to receive immersion fluid which leaks into a gap between an edge of a substrate on the substrate table and an edge of a recess in which the substrate is located. A thermal conditioning system is provided to thermally condition at least the portion of the recess supporting the substrate by directing one or more jets of fluid onto a reverse side of the section supporting the substrate.

A temperature control device and a temperature control method are provided. The temperature control device is located at an interface between a photoresist coating and developing machine and a lithography machine and includes: a temperature detection device, a gas flow generator and a controller. The temperature detection device and the gas flow generator are respectively connected to the controller. The temperature detection device is configured to detect an actual temperature at the interface in real time. The gas flow generator is at least configured to generate a gas flow sealing knife around the interface. The controller is configured to control the gas flow generator to generate the gas flow sealing knife responsive to that the actual temperature detected by the temperature detection device is not equal to the target temperature, to control the actual temperature at the interface to reach the target temperature through the gas flow sealing knife.

A method includes moving a wafer stage to a first station on a table body of a lithography chamber; placing a wafer on a top surface of the wafer stage; emitting a first laser beam from a first laser emitter toward a first beam splitter on a first sidewall of the wafer stage, wherein a first portion of the first laser beam is reflected by the first beam splitter to form a first reflected laser beam, and a second portion of the first laser beam transmits through the first beam splitter to form a first transmitted laser beam; calculating a position of the wafer stage on a first axis based on the first reflected laser beam; after calculating the position of the wafer, moving the wafer stage to a second station on the table body; and performing a lithography process to the wafer.

A method includes identifying at least one of historical data associated with historical substrate lots processed by substrate processing tools in a substrate processing facility or simulated data for simulated substrate lots processed by simulated substrate processing tools. The method further includes generating features from the at least one of the historical data for the historical substrate lots or the simulated data for the simulated substrate lots. The method further includes training a machine learning model with data input comprising the features to generate a trained machine learning model. The trained machine learning model is capable of generating one or more outputs indicative of one or more corrective actions to be performed in the substrate processing facility.

A micro-lithographic projection exposure system comprises an illumination unit and a projection lens with at least one element which is penetrated at least in regions by a temperature-control fluid line provided for conducting a temperature-control fluid for controlling the temperature of the element. The temperature-control fluid line is connected to a temperature-control fluid storage container. A temperature-control element for controlling the temperature of the temperature-control fluid is provided on or in the temperature-control fluid line. At least two of the elements are independently penetrated by a respective separate at least one of temperature-control fluid lines, or at least two different regions of the at least one element are penetrated independently by a respective separate at least one of the temperature-control fluid lines, or at least two of the elements are penetrated by the temperature-control fluid line. A corresponding method is provided.

Aspects of disclosure provide a method for attaching wiring connections to a component using both design and field measured data of the component to produce accurate wiring connections.

A temperature control apparatus is located at an interface between a coating and developing machine and a lithography machine, and includes a temperature detecting device and a temperature control device. The temperature detecting device is connected to the temperature control device. The temperature detecting device is configured to detect an actual temperature at the interface in real time. The temperature control device is configured to control the actual temperature at the interface to reach a target temperature when the actual temperature is not equal to the target temperature.