A method described herein involves identifying a first time associated with a read operation that retrieves data of a write unit at a memory sub-system, identifying a second time associated with a write operation that stored the data of the write unit at the memory sub-system, and performing a refresh operation for the data of the write unit at the memory sub-system based on a difference between the first time associated with the read operation and the second time associated with the write operation.

A Memory Device (MD) for storing temporary data designated for volatile storage by a processor and persistent data designated for non-volatile storage by the processor. An address is associated with a first location in a volatile memory array and with a second location in a Non-Volatile Memory (NVM) array of the MD. Data is written in the first location, and flushed from the first location to the second location. A refresh rate for the first location is reduced after flushing the data from the first location until after data is written again to the first location. In another aspect, a processor designates a memory page in a virtual memory space as volatile or non-volatile based on data allocated to the memory page, and defines the volatility mode for the MD based on whether the memory page is designated as volatile or non-volatile.

A method of processing in-memory commands in a high-bandwidth memory (HBM) system includes sending a function-in-HBM instruction to the HBM by a HBM memory controller of a GPU. A logic component of the HBM receives the FIM instruction and coordinates the instructions execution using the controller, an ALU, and a SRAM located on the logic component.

A memory refresh method is applied to a computer system including a processor, a memory controller, and a dynamic random access memory (DRAM). The memory controller receives a first plurality of access requests from the processor. The memory controller refreshes a first rank in a plurality of ranks at shortened interval set to T/N when a quantity of target ranks to be accessed by the first plurality of access requests is less than a first threshold and a proportion of read requests in the first plurality of access requests or a proportion of write requests in the first plurality of access requests is greater than a second threshold. T is a standard average refresh interval, and N is greater than 1. The memory refresh technology provided in this application can improve performance of the computer system in a memory refresh process.

The present embodiments provide a system that supports self-refreshing operations in a memory device. During operation, the system transitions the memory device from an auto-refresh state, wherein a memory controller controls refreshing operations for the memory device, to a self-refresh state, wherein the memory device controls the refreshing operations. While the memory device is in the self-refresh state, the system sends progress information for the refreshing operations from the memory device to the memory controller. Next, upon returning from the self-refresh state to the auto-refresh state, the system uses the progress information received from the memory device to control the sequencing of subsequent operations by the memory controller.

The present embodiments provide a system that supports self-refreshing operations in a memory device. During operation, the system transitions the memory device from an auto-refresh state, wherein a memory controller controls refreshing operations for the memory device, to a self-refresh state, wherein the memory device controls the refreshing operations. While the memory device is in the self-refresh state, the system sends progress information for the refreshing operations from the memory device to the memory controller. Next, upon returning from the self-refresh state to the auto-refresh state, the system uses the progress information received from the memory device to control the sequencing of subsequent operations by the memory controller.

Memory systems with a communications bus (and associated systems, devices, and methods) are disclosed herein. In one embodiment, a memory device includes an input/output terminal separate from data terminals of the memory device. The input/output terminal can be operably connected to a memory controller via a communications bus. The memory device can be configured to initiate a communication with the memory controller by outputting a signal via the input/output terminal and/or over the communications bus. The memory device can be configured to output the signal in accordance with a clock signal that is different from a second clock signal user to output or receive data signals via the data terminals. In some embodiments, the memory device is configured to initiate communications over the communication bus only when it possesses a communication token. The communication token can be transferred between memory devices operably connected to the communications bus.

The present disclosure is directed to systems and methods of transferring bulk data, such as OLED compensation mask data, generated by a source device to a sink device using a high-bandwidth embedded DisplayPort (eDP) connection contemporaneous with an ENABLED Panel Self-Refresh (PSR) mode. Upon ENABLING the PSR mode, the source control circuitry causes the source transmitter circuitry, the sink receiver circuitry, and the eDP high-bandwidth communication link to remain active rather than inactive. The source control circuitry generates one or more data transport units (DTUs) having a header portion that contains data indicative of the presence of a bulk data payload and the non-display status of the bulk data payload carried by the DTUs.

An integrated circuit device includes a memory controller coupleable to a memory. The memory controller to schedule memory accesses to regions of the memory based on memory timing parameters specific to the regions. A method includes receiving a memory access request at a memory device. The method further includes accessing, from a timing data store of the memory device, data representing a memory timing parameter specific to a region of the memory cell circuitry targeted by the memory access request. The method also includes scheduling, at the memory controller, the memory access request based on the data.

A method of processing in-memory commands in a high-bandwidth memory (HBM) system includes sending a function-in-HBM instruction to the HBM by a HBM memory controller of a GPU. A logic component of the HBM receives the FIM instruction and coordinates the instructions execution using the controller, an ALU, and a SRAM located on the logic component.