Systems, methods, and apparatus are provided for tuning a memristive property of a device. The device (500) includes a layer of a dielectric material (507) disposed over and forming an interface with a layer of an electrically conductive material (506), and a gate electrode (508) disposed over the dielectric material. The dielectric material layer includes at least one ionic species (302) having a high ion mobility. The electrically conductive material is configured such that a potential difference applied to the device can cause the at least one ionic species to migrate reversibly across the interface into or out of the electrically conductive material layer, to modify the resistive state of the electrically conductive material layer.

A magnetic memory according to an embodiment includes: a magnetic member having a cylindrical form, the magnetic member including a first end portion and a second end portion and extending in a first direction from the first end portion to the second end portion, the first end portion having an end face, which includes a face inclined with respect to a plane perpendicular to the first direction.

According to one embodiment, a magnetic memory puts a first magnetic domain having a magnetization direction which is the same as or opposite to a magnetic domain of a first layer of a magnetic memory line, into the first layer, based on a value of data and the magnetization direction of the first layer. When receiving a first command, the magnetic memory puts a first additional magnetic domain and a second additional magnetic domain having a magnetization direction opposite to the first additional magnetic domain into the magnetic memory line. When receiving a second command, the magnetic memory read the first and second additional magnetic domains to determine the magnetization direction of the first magnetic domain.

A magnetic memory according to an embodiment includes: a magnetic member having a cylindrical form, the magnetic member including a first end portion and a second end portion and extending in a first direction from the first end portion to the second end portion, the first end portion having an end face, which includes a face inclined with respect to a plane perpendicular to the first direction.

According to one embodiment, a magnetic memory puts a first magnetic domain having a magnetization direction which is the same as or opposite to a magnetic domain of a first layer of a magnetic memory line, into the first layer, based on a value of data and the magnetization direction of the first layer. When receiving a first command, the magnetic memory puts a first additional magnetic domain and a second additional magnetic domain having a magnetization direction opposite to the first additional magnetic domain into the magnetic memory line. When receiving a second command, the magnetic memory read the first and second additional magnetic domains to determine the magnetization direction of the first magnetic domain.

Systems, methods, and apparatus are provided for tuning a memristive property of a device. The device (500) includes a layer of a dielectric material (507) disposed over and forming an interface with a layer of an electrically conductive material (506), and a gate electrode (508) disposed over the dielectric material. The dielectric material layer includes at least one ionic species (302) having a high ion mobility. The electrically conductive material is configured such that a potential difference applied to the device can cause the at least one ionic species to migrate reversibly across the interface into or out of the electrically conductive material layer, to modify the resistive state of the electrically conductive material layer.

Systems, methods, and apparatus are provided for tuning a memristive property of a device. The device (500) includes a layer of a dielectric material (507) disposed over and forming an interface with a layer of an electrically conductive material (506), and a gate electrode (508) disposed over the dielectric material. The dielectric material layer includes at least one ionic species (302) having a high ion mobility. The electrically conductive material is configured such that a potential difference applied to the device can cause the at least one ionic species to migrate reversibly across the interface into or out of the electrically conductive material layer, to modify the resistive state of the electrically conductive material layer.

The present disclosure relates to the technical field of information data storage and processing. There is provided a method for regulating magnetic multi-domain state, comprising: when a current is applied to a magnetic thin film, applying an additional external magnetic field having a magnetic field strength of 0 to 4105 A/m to regulate magnetization state of the magnetic thin film; wherein the current is configured to drive movements of a magnetic domain of the magnetic multi-domain states in the magnetic thin film, and the external magnetic field is configured to regulate generation of new magnetic domain in the magnetic thin film and state of the magnetic domain during the movement, so that the magnetic thin film is in a stable magnetic multi-domain state. Such a multi-domain state can't be affected by a higher or lower current and keeps stable when the current is removed. Such a method may be used for magnetic memory or spin-logic device to implement a nonvolatile multi-valued storage, multi-bits logic operation, or neuromorphic computing.

The present disclosure relates to the technical field of information data storage and processing. There is provided a method for regulating magnetic multi-domain state, comprising: when a current is applied to a magnetic thin film, applying an external magnetic field having a magnetic field strength of 0 to 410.sup.5 A/m to regulate magnetization state of the magnetic thin film; wherein the current is configured to drive movements of a magnetic domain of the magnetic multi-domain states in the magnetic thin film, and the external magnetic field is configured to regulate generation of new magnetic domain in the magnetic thin film and state of the magnetic domain during the movement, so that the magnetic thin film is in a stable magnetic multi-domain state. Such a multi-domain state can't be affected by a higher or lower current and may be kept to be stable when the current is removed. Such a method may be used for current magnetic memory and to operate the magnetization stage of the spin-logic device in the future to implement a nonvolatile multi-valued storage and multi-bits logic operation.