A multiplier has a pair of charge reservoirs. The pair of charge reservoirs are connected in series. A first charge movement device induces charge movement to or from the pair of charge reservoirs at a same rate. A second charge movement device induces charge movement to or from one of the pair of reservoirs, the rate of charge movement programmed to one of add or remove charges at a rate proportional to the first charge movement device. The first charge movement device loads a first charge into a first of the pair of charge reservoirs during a first cycle. The first charge movement device and the second charge movement device remove charges at a proportional rate from the pair of charge reservoirs during a second cycle until the first of the pair of charge reservoirs is depleted of the first charge. The second charge reservoir thereafter holding the multiplied result.

A multiplier has a pair of charge reservoirs. The pair of charge reservoirs are connected in series. A first charge movement device induces charge movement to or from the pair of charge reservoirs at a same rate. A second charge movement device induces charge movement to or from one of the pair of reservoirs, the rate of charge movement programmed to one of add or remove charges at a rate proportional to the first charge movement device. The first charge movement device loads a first charge into a first of the pair of charge reservoirs during a first cycle. The first charge movement device and the second charge movement device remove charges at a proportional rate from the pair of charge reservoirs during a second cycle until the first of the pair of charge reservoirs is depleted of the first charge. The second charge reservoir thereafter holding the multiplied result.

In a memory cell unit array, memory cell units each constituted of first wires, second wires, and a nonvolatile memory cell are arranged in a two-dimensional matrix form in a first direction and a second direction. Each of the memory cell units includes a control circuit below it. The control circuit is constituted of a first control circuit and a second control circuit. The second wires are connected to the second control circuit. Some of the first wires that constitute the memory cell unit are connected to the first control circuit that constitutes this memory cell unit. Others of the first wires are connected to the first control circuit that constitutes an adjacent memory cell unit adjacent thereto in the first direction.

A data reading circuit for reading data stored in a resistive random access memory includes a sense amplifier, a first switch, a second switch, a current trimming circuit, and a reference cell. The sense amplifier has a first input terminal coupled to a first terminal of the first switch and the data cell, and a second input terminal coupled to a first terminal of the second switch and the reference cell. A second terminal of the first switch is coupled to a second terminal of the second switch through the current trimming circuit. The current trimming circuit is configured to trim a current of the first input terminal of the sense amplifier, or trim a current of the second input terminal of the sense amplifier.

A multiplier has a pair of charge reservoirs. The pair of charge reservoirs are connected in series. A first charge movement device induces charge movement to or from the pair of charge reservoirs at a same rate. A second charge movement device induces charge movement to or from one of the pair of reservoirs, the rate of charge movement programmed to one of add or remove charges at a rate proportional to the first charge movement device. The first charge movement device loads a first charge into a first of the pair of charge reservoirs during a first cycle. The first charge movement device and the second charge movement device remove charges at a proportional rate from the pair of charge reservoirs during a second cycle until the first of the pair of charge reservoirs is depleted of the first charge. The second charge reservoir thereafter holding the multiplied result.

A multiplier has a pair of charge reservoirs. The pair of charge reservoirs are connected in series. A first charge movement device induces charge movement to or from the pair of charge reservoirs at a same rate. A second charge movement device induces charge movement to or from one of the pair of reservoirs, the rate of charge movement programmed to one of add or remove charges at a rate proportional to the first charge movement device. The first charge movement device loads a first charge into a first of the pair of charge reservoirs during a first cycle. The first charge movement device and the second charge movement device remove charges at a proportional rate from the pair of charge reservoirs during a second cycle until the first of the pair of charge reservoirs is depleted of the first charge. The second charge reservoir thereafter holding the multiplied result.

In a memory cell unit array, memory cell units each constituted of first wires, second wires, and a nonvolatile memory cell are arranged in a two-dimensional matrix form in a first direction and a second direction. Each of the memory cell units includes a control circuit below it. The control circuit is constituted of a first control circuit and a second control circuit. The second wires are connected to the second control circuit. Some of the first wires that constitute the memory cell unit are connected to the first control circuit that constitutes this memory cell unit. Others of the first wires are connected to the first control circuit that constitutes an adjacent memory cell unit adjacent thereto in the first direction.

A semiconductor device includes a plurality of spin units individually including a memory cell configured to store values of spins in an Ising model, a memory cell configured to store an interaction coefficient from an adjacent spin that exerts an interaction on the spin, a memory cell configured to store an external magnetic field coefficient of the spin, and an interaction circuit configured to determine a subsequent state of the spin. The spin units individually include a random number generator configured to supply the random number to the plurality of the spin units and generate two-valued simulated coefficients of two values or simulated coefficients of three values in performing an interaction to determine a subsequent state of a spin of the spin units from a value of a spin from an adjacent spin unit, an interaction coefficient, and an external magnetic field coefficient.

A multiplier has a pair of charge reservoirs. The pair of charge reservoirs are connected in series. A first charge movement device induces charge movement to or from the pair of charge reservoirs at a same rate. A second charge movement device induces charge movement to or from one of the pair of reservoirs, the rate of charge movement programmed to one of add or remove charges at a rate proportional to the first charge movement device. The first charge movement device loads a first charge into a first of the pair of charge reservoirs during a first cycle. The first charge movement device and the second charge movement device remove charges at a proportional rate from the pair of charge reservoirs during a second cycle until the first of the pair of charge reservoirs is depleted of the first charge. The second charge reservoir thereafter holding the multiplied result.