The present disclosure relates to a shiftable memory comprising: a plurality of memory cells arranged in rows and columns, wherein the memory cells of the rows are interconnected, thereby forming chains of memory cells; at least one first serial output data port; output data logic for connecting an output of any of the chains of memory cells to the first serial output data port, or at least one first parallel output data port and at least one read shift register configured for serially collecting serial output data from the output of any of the chains of memory cells; and/or at least one first serial input data port; input data logic for connecting the first serial input data port to an input of any of the chains of memory cells, or at least one parallel input data port and at least one write shift register for serially shifting input data to the input of any of the chains of memory cells; and a controller configured to control the shifting of the data in the chains of memory cells, the controller further configured to control the output data logic and/or the input data logic. The disclosure further relates to a method for operating the shiftable memory.

A scan driver includes: a plurality of first stages configured to sequentially output a plurality of intermediate scan signals based on a scan start signal; a plurality of masking transistors respectively connected to a plurality of output terminals of the plurality of first stages, and configured to selectively transfer the plurality of intermediate scan signals in response to a masking signal, respectively; and a plurality of second stages including a plurality of input terminals respectively connected to the plurality of masking transistors, and configured to selectively output a plurality of scan signals based on the plurality of intermediate scan signals selectively transferred by the plurality of masking transistors.

The embodiments of the present disclosure propose a shift register and a method for driving the same, a gate driving circuit, and a display apparatus. The shift register includes: a scanning circuit configured to generate a first signal for causing a gate driving signal output by the shift register to have a row shift portion during a scanning period; a sensing circuit configured to generate a second signal for causing the gate driving signal to have a frame shift portion during a blanking period; and a random shift circuit electrically coupled to the scanning circuit and the sensing circuit respectively, and configured to generate the gate driving signal having the row shift portion and randomly having the frame shift portion based on the first signal and the second signal.

Systems and methods for multi-chip programming for phased arrays are provided herein. In certain embodiments, a semiconductor device includes one or more inputs configured to receive frame data, an internal memory configured to store the received frame data, and a shift register configured to receive the frame data and comprising a plurality of shift register bit positions. The device further includes a latch configured to store a command type, a first multiplexor configured to select at least one first bit from the shift register based on the command type and provide the at least one first bit to the latch, an output configured to output the frame data, and a second multiplexor configured to select at least one second bit from the shift register based on the command type and provide the at least one second bit to the output.

This application discloses a shift register, a gate drive circuit and a display device. The signal of the input signal terminal is provided to the pull-up node by the input circuit under the control of the input signal terminal; and the signal of the second reference signal terminal is provided to the output signal terminal by the output circuit under the control of the clock signal terminal and the signal of the pull-up node. The signal of the first reference signal terminal is provided to the pull-up node by the reset circuit under the control of the input signal terminal and the clock signal terminal. The pull-down control circuit resets the output signal terminal according to the signal of the first reference signal terminal.

A scan driver includes: a plurality of first stages configured to sequentially output a plurality of intermediate scan signals based on a scan start signal; a plurality of masking transistors respectively connected to a plurality of output terminals of the plurality of first stages, and configured to selectively transfer the plurality of intermediate scan signals in response to a masking signal, respectively; and a plurality of second stages including a plurality of input terminals respectively connected to the plurality of masking transistors, and configured to selectively output a plurality of scan signals based on the plurality of intermediate scan signals selectively transferred by the plurality of masking transistors.

The embodiments of the present disclosure propose a shift register and a method for driving the same, a gate driving circuit, and a display apparatus. The shift register includes: a scanning circuit configured to generate a first signal for causing a gate driving signal output by the shift register to have a row shift portion during a scanning period; a sensing circuit configured to generate a second signal for causing the gate driving signal to have a frame shift portion during a blanking period; and a random shift circuit electrically coupled to the scanning circuit and the sensing circuit respectively, and configured to generate the gate driving signal having the row shift portion and randomly having the frame shift portion based on the first signal and the second signal.

A method of operating a first-in-first-out memory, called a FIFO, includes performing write and read operations of data with a FIFO. The FIFO has a size fifo_size and a maximum retention time. Once a datum is written to the FIFO, there is a limit of fifo_size-1 write operations before the datum becomes invalid and there is a limit of fifo_size-1 read operations before the datum is read, and the data is refreshed before reaching the maximum retention time. During the refreshing, the FIFO is available for further write and read operations.

Systems and methods for multi-chip programming for phased arrays are provided herein. In certain embodiments, a semiconductor device includes one or more inputs configured to receive frame data, an internal memory configured to store the received frame data, and a shift register configured to receive the frame data and comprising a plurality of shift register bit positions. The device further includes a latch configured to store a command type, a first multiplexor configured to select at least one first bit from the shift register based on the command type and provide the at least one first bit to the latch, an output configured to output the frame data, and a second multiplexor configured to select at least one second bit from the shift register based on the command type and provide the at least one second bit to the output.

A method of operating a first-in-first-out memory, called a FIFO, includes performing write and read operations of data with a FIFO. The FIFO has a size fifo_size and a maximum retention time. Once a datum is written to the FIFO, there is a limit of fifo_size-1 write operations before the datum becomes invalid and there is a limit of fifo_size-1 read operations before the datum is read, and the data is refreshed before reaching the maximum retention time. During the refreshing, the FIFO is available for further write and read operations.