Methods, systems, and devices for cleaning memory blocks using multiple types of write operations are described. A counter may be incremented each time a write command is received. In response to the counter reaching a threshold, the counter may be reset and a flag may be set. Each time a cleaning of a memory block is to take place, the flag may be checked. If the flag is set, the memory block may be cleaned using a second type of cleaning operation, such as one using a force write approach. Otherwise, the memory block may be cleaned using a first type of cleaning operation, such as one using a normal write approach. Once set, the flag may be reset after one or more memory blocks are cleaned using the second type of cleaning operation.

A writing method for a non-volatile memory device includes; performing a sensing operation, comparing write data with read data retrieved by the sensing operation, determining whether the write data is set state when the write data and the read data are the same, performing a set operation when the write data is set state, and not performing a write operation when the write data is not set data.

The present disclosure includes systems, apparatuses, and methods related to generating a random data value. For example, a first read operation may be performed on a memory cell programmed to a first state, wherein the first read operation is performed using a first read voltage that is within a predetermined threshold voltage distribution corresponding to the first state. A programming signal may be applied to the memory cell responsive to the first read operation resulting in a snapback event, wherein the programming signal is configured to place the memory cell in a second state. A second read operation may be performed to determine whether the memory cell is in the first state or the second state using a second read voltage that is between the predetermined threshold voltage distribution corresponding to the first state and a second threshold voltage distribution corresponding to the second state.

In response to a request to store new data at a memory location of a bitwise programmable non-volatile memory, data stored at the memory location of the bitwise programmable memory is sensed. The bits of the sensed data are compared with bits of the new data. An indication of a cost difference is determined between a first burst of bitwise programming operations associated with programming bits of the new data which are different from bits of the sensed data, and a second burst of bitwise programming operations associated with programming bits of a complementary inversion of the new data which are different from bits of the sensed data. One of the first burst of bitwise programming operations or the second burst of bitwise programming operations is executed based on the generated indication of the cost difference.

A memory device includes a plurality of memory cells, each including a switching device and an information storage device connected to the switching device and having a phase change material, the plurality of memory cells connected to a plurality of word lines and a plurality of bit lines, a decoder circuit determining at least one of the plurality of memory cells to be a selected memory cell, and a program circuit configured to input a programming current to the selected memory cell to perform a programming operation and configured to detect a resistance of the selected memory cell to adjust a magnitude of the programming current.

A storage control apparatus includes: a pre-processing-execution determining block for determining whether or not either one of an erase operation and a program operation is to be executed as pre-processing in a write operation to be carried out on a predetermined data area to serve as a write-operation object; and a pre-read processing block for reading out pre-read data from the data area prior to the write operation if a result of the determination indicates that the pre-processing is to be executed. The apparatus further includes a bit operating block for carrying out: the pre-processing and one of the erase and program operations which is not the pre-processing as post-processing if a result of the determination indicates that the pre-processing is to be executed; and the post-processing without carrying out the pre-processing if a determination result indicates that the pre-processing is not to be executed.

Systems, apparatuses, and methods related to image based media type selection are described. Memory systems can include multiple types of memory media. Data can be written in a type of memory media based on one or more settings applied to the data. A setting can be determined based on input received by a logic within the memory system. In an example, a method can include receiving, at logic within a memory system that comprising a plurality of memory media types, data from an image sensor coupled to the logic of the memory system, receiving input from a host, identifying one or more attributes of the data, analyzing the received input to determine an setting, generating the setting based on the analyzed input, and writing the data to a first memory media type of the plurality of memory media types based on the generated setting.

An operating method of a memory device, which includes a first memory region and a second memory region, includes reading first data from the first memory region and storing the read first data in a data buffer block, performing a first XOR operation on the first data provided from the data buffer block and second data read from the second memory region to generate first result data, writing the first data stored in the data buffer block in the second memory region, performing a second XOR operation on the first data and the first result data to generate the second data, storing the generated second data in the data buffer block, and writing the second data stored in the data buffer block in the first memory region.

Disclosed is a nonvolatile memory device including a plurality of memory cells operable to store data, each memory cell structured to include a resistance change layer exhibiting different resistance states with different resistance values for representing data, a write circuit suitable for generating a write pulse in a write mode to write data in a memory cell of the plurality of memory cells, and a read circuit suitable for generating a read pulse in a read mode to read data from a memory cell of the plurality of memory cells, wherein the memory cells are each structured to be operable in writing or reading data when a range of a voltage level change of the read pulse corresponding to a pulse width change of the read pulse is within a range of a voltage level change of the write pulse corresponding to a pulse width change of the write pulse.

A variable resistance memory device includes: a memory cell including a first and second sub memory cell; and a first, second and third conductor. The first sub memory cell is above the first conductor, and includes a first variable resistance element and a first bidirectional switching element. The second sub memory cell is above the second conductor, and includes a second variable resistance element and a second bidirectional switching element. The second conductor is above the first sub memory cell. The third conductor is above the second sub memory cell. The variable resistance memory device is configured to receive first data and to write the first data to the memory cell when the first data does not match second data read from the memory cell.